M74HCT10M1R

M74HCT10M1R

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    M74HCT10M1R - TRIPLE 3-INPUT NAND GATE - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
M74HCT10M1R 数据手册
M 54HCT10 M74HCT10 TRIPLE 3-INPUT NAND GATE . . . . . . . HIGH SPEED tPD = 11 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C COMPATIBLE WITH TTL OUTPUTS VIH = 2V (MIN.) VIL = 0.8V (MAX) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE IOH = IOL = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tPLH = tPHL PIN AND FUNCTION COMPATIBLE WITH 54/74LS10 B1R (Plastic Package) F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) DESCRIPTION The M54/74HCT10 is a high speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage. This integrated circuit has input and output characteristics that are fully compatible with 54/74 LSTTL logic families. M54/74HCT devices are designed to directly interface HSC2MOS systems with TTL and NMOS components. They are also plug in replacements for LSTTL devices giving a reduction of power consumption. INPUT AND OUTPUT EQUIVALENT CIRCUIT ORDER CODES : M54HCT10F1R M74HCT10M1R M74HCT10B1R M74HCT10C1R PIN CONNECTIONS (top view) NC = No Internal Connection February 1993 1/9 M54/M74HCT10 T RUTH TABLE A L X X H B X L X H C X X L H Y H H H L IEC LOGIC SYMBOL PIN DESCRIPTION PIN No 1, 3, 9 2, 4, 10 13, 5, 11 12, 6, 8 7 14 SYMBOL 1A to 3A 1B to 3B 1C to 3C 1Y to 3Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage SCHEMATIC CIRCUIT (Per Gate) ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK ICC IO or IGND PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 25 ± 50 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW o o C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC 2/9 M54/M74HCT10 R ECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature: M54HC Series M74HC Series Input Rise and Fall Time (VCC = 4.5 to 5.5V) Parameter Value 4.5 to 5.5 0 to VCC 0 to VCC -55 to +125 -40 to +85 0 to 500 Unit V V V o o C C ns DC SPECIFICATIONS Test Conditions Symbol Parameter VCC (V) 4.5 to 5.5 4.5 to 5.5 4.5 VI = IO=-20 µA VIH or IO=-4.0 mA V IL VI = IO= 20 µA VIH or IO= 4.0 mA V IL VI = VCC or GND VI = VCC or GND Per Input pin VI = 0.5V or V I = 2.4V Other Inputs at V CC or GND IO= 0 TA = 25 oC 54HC and 74HC Min. 2.0 Typ. Max. Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. 2.0 Max. Min. 2.0 Max. V Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage V IL 0.8 0.8 0.8 V V OH 4.4 4.18 4.5 4.31 0.0 0.17 0.1 0.26 ±0.1 1 2.0 4.4 4.13 0.1 0.33 ±1 10 2.9 4.4 4.10 0.1 V 0.4 ±1 20 3.0 µA µA mA V VOL Low Level Output Voltage 4.5 II ICC ∆ICC Input Leakage Current Quiescent Supply Current Additional worst case supply current 5.5 5.5 5.5 3/9 M54/M74HCT10 A C ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns) Test Conditions Symbol Parameter VCC (V) 4.5 4.5 TA = 25 C 54HC and 74HC Min. Typ. Max. 8 14 5 46 15 22 10 o Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 19 28 10 22 33 10 pF pF Unit tTLH tTHL tPLH tPHL CIN CPD (*) Output Transition Time Propagation Delay Time Input Capacitance Power Dissipation Capacitance (*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/3 (per Gate) SWITCHING CHARACTERISTICS TEST CIRCUIT TEST CIRCUIT ICC (Opr.) INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST. 4/9 M54/M74HCT10 Plastic DIP14 MECHANICAL DATA mm MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP. MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 inch TYP. MAX. DIM. P001A 5/9 M54/M74HCT10 Ceramic DIP14/1 MECHANICAL DATA mm MIN. A B D E e3 F G H L M N P Q 7.8 2.29 0.4 1.17 0.22 1.52 0.38 15.24 2.79 0.55 1.52 0.31 2.54 10.3 8.05 5.08 0.307 0.090 0.016 0.046 0.009 0.060 3.3 0.015 0.600 0.110 0.022 0.060 0.012 0.100 0.406 0.317 0.200 TYP. MAX. 20 7.0 0.130 MIN. inch TYP. MAX. 0.787 0.276 DIM. P053C 6/9 M54/M74HCT10 SO14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8° (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45° (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 7/9 M54/M74HCT10 PLCC20 MECHANICAL DATA mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 2.54 0.56 8.38 0.290 0.050 0.200 0.015 0.004 TYP. MAX. 10.03 9.04 4.57 MIN. 0.385 0.350 0.165 0.100 0.022 0.330 inch TYP. MAX. 0.395 0.356 0.180 DIM. P027A 8/9 M54/M74HCT10 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 9/9
M74HCT10M1R
1. 物料型号: - M54HCT10F1R、M74HCT10M1R、M74HCT10B1R、M74HCT10C1R。

2. 器件简介: - M54/74HCT10是一款高速CMOS三输入与非门,采用硅门C2MOS技术制造。它结合了LSTTL的高速性能和真正的CMOS低功耗特性。内部电路由三部分组成,包括缓冲输出,提供高抗噪性和稳定输出。所有输入都配备了防静电放电和瞬态过电压的保护电路。

3. 引脚分配: - 1,3,9引脚:1A至3A,数据输入。 - 2,4,10引脚:1B至3B,数据输入。 - 13,5,11引脚:1C至3C,数据输入。 - 12,6,8引脚:1Y至3Y,数据输出。 - 7引脚:GND,地(0V)。 - 14引脚:Vcc,正供电电压。

4. 参数特性: - 供电电压(Vcc):-0.5到+7V。 - 输入电压(V1):-0.5到Vcc + 0.5V。 - 输出电压(Vo):-0.5到Vcc + 0.5V。 - 输入二极管电流(K):±20mA。 - 输出二极管电流(loK):±20mA。 - 输出源/汇电流每输出引脚(lo):±25mA。 - Vcc或地电流(lcc或IGND):±50mA。 - 功耗(PD):500mW(注意:65°C以下每升高10°C降低10mW,从65°C到85°C)。

5. 功能详解: - 该集成电路的输入和输出特性与54/74 LSTTL逻辑系列完全兼容。M54/74HCT设备设计用于直接将HSC2MOS系统与TTL和NMOS组件接口。它们也是LSTTL设备的直接替代品,可以降低功耗。

6. 应用信息: - 该器件适用于需要高速CMOS和低功耗特性的应用,可以直接替换LSTTL设备以减少功耗。

7. 封装信息: - 提供了多种封装选项,包括塑料DIP14、陶瓷DIP14/1、SO14和PLCC20等。
M74HCT10M1R 价格&库存

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