M74HCT132TTR

M74HCT132 QUAD 2-INPUT SCHMITT NAND GATE ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 19ns (TYP.) at VCC = 4.5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY : VH = 0.7V (TYP) at Vcc = 4.5V BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 132 DESCRIPTION The M74HCT132 is an high speed CMOS QUAD 2-INPUT SCHMITT NAND GATE fabricated with silicon gate C2MOS technology. Pin configuration and function are the same as those of the M74HCT00. The hysteresis characteristics (around 20% Vcc) of all inputs allow slowly changing input signals to be transformed into sharply defined jitter-free output signals. ) (s t c u DIP PACKAGE TUBE t e l o s b O TSSOP u d o r P e ORDER CODES DIP SOP TSSOP ) s ( ct SOP M74HCT132B1R M74HCT132M1R T&R M74HCT132RM13TR M74HCT132TTR The M74HCT132 is designed to directly interface HSC2MOS systems with TTL and NMOS components. All inputs are equipped with protection circuits against static discharge and transient excess voltage. d o r P e t e l o s b O PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/8 M74HCT132 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 1A to 4A 1B to 4B 1Y to 4Y GND VCC 14 NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A B L L H H L H L H VCC r P e let Parameter Supply Voltage VI DC Input Voltage VO DC Output Voltage IIK DC Input Diode Current IOK DC Output Diode Current IO DC Output Current o s b O ) s ( t c ICC or IGND DC VCC or Ground Current u d o PD Power Dissipation Tstg Storage Temperature TL Lead Temperature (10 sec) r P e ) s ( ct u d o ABSOLUTE MAXIMUM RATINGS Symbol Y Value H H H L Unit -0.5 to +7 V -0.5 to VCC + 0.5 V -0.5 to VCC + 0.5 ± 20 mA ± 20 mA ± 25 mA V ± 50 mA 500(*) mW -65 to +150 °C 300 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C t e l o RECOMMENDED OPERATING CONDITIONS s b O Symbol VCC 2/8 Parameter Value Unit Supply Voltage 4.5 to 5.5 V VI Input Voltage 0 to VCC V VO Output Voltage Top Operating Temperature 0 to VCC V -55 to 125 °C M74HCT132 DC SPECIFICATIONS Test Condition Symbol Parameter High Level Threshold Voltage VN Low Level Threshold Voltage VH Hysteresis Voltage VOH High Level Output Voltage 4.5 Low Level Output Voltage 4.5 VOL II Input Leakage Current Quiescent Supply Current ICC TA = 25°C VCC (V) VP Value 4.5 5.5 4.5 5.5 4.5 5.5 -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. 1.2 1.4 0.5 0.6 0.4 0.4 1.55 1.75 0.85 1.1 0.7 0.7 1.9 2.1 1.2 1.4 1.4 1.5 1.2 1.4 0.5 0.6 0.4 0.4 1.9 2.1 1.2 1.4 1.4 1.5 1.2 1.4 0.5 0.6 0.4 0.4 1.9 2.1 1.2 1.4 1.4 1.5 4.4 4.5 4.4 4.4 4.18 4.31 4.13 4.10 IO=20 µA 0.0 0.1 0.1 0.17 0.26 0.33 5.5 VI = VCC or GND 5.5 VI = VCC or GND ± 0.1 e t e l 1 o s b V V ) s ( ct IO=-20 µA IO=-4.0 mA IO=4.0 mA Unit du o r P 0.1 0.40 V V V ±1 ±1 µA 10 20 µA AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol Parameter O ) VCC (V) tTLH tTHL Output Transition Time tPLH tPHL Propagation Delay Time 4.5 s ( t c Min. u d o r P e 4.5 Value TA = 25°C -40 to 85°C -55 to 125°C Min. Min. Max. Unit Typ. Max. Max. 8 15 19 22 ns 19 30 38 45 ns CAPACITIVE CHARACTERISTICS t e l o bs Symbol O Parameter Test Condition VCC (V) Value TA = 25°C Min. Typ. Max. 10 CIN Input Capacitance 5 CPD Power Dissipation Capacitance (note 1) 45 -40 to 85°C -55 to 125°C Min. Min. Max. 10 Unit Max. 10 pF pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC 3/8 M74HCT132 TEST CIRCUIT ) s ( ct u d o r P e CL = 50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) t e l o WAVEFORM 1: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) ) (s t c u d o r P e t e l o s b O 4/8 s b O M74HCT132 Plastic DIP-14 MECHANICAL DATA mm. inch DIM. MIN. a1 0.51 B 1.39 TYP MAX. MIN. TYP. MAX. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D ) s ( ct 20 E 8.5 e 2.54 e3 15.24 u d o 0.335 7.1 I 5.1 1.27 s ( t c 2.54 e t e ol bs O ) 3.3 Z Pr 0.100 F L 0.787 0.600 0.280 0.201 0.130 0.050 0.100 u d o r P e t e l o s b O P001A 5/8 M74HCT132 SO-14 MECHANICAL DATA mm. DIM. MIN. TYP A inch MAX. MIN. TYP. a1 1.75 MAX. 0.1 0.068 0.2 a2 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 b1 0.19 0.25 0.007 C 0.5 0.018 ) s ( ct 0.010 0.019 c1 45° (typ.) D 8.55 8.75 0.336 E 5.8 6.2 0.228 e 1.27 e3 7.62 F 3.8 4.0 4.6 5.3 L 0.5 ) (s e t e l so b O 1.27 S Pr 0.344 0.244 0.050 G M u d o 0.68 0.300 0.149 0.157 0.181 0.208 0.019 0.050 0.026 8° (max.) t c u d o r P e t e l o s b O PO13G 6/8 M74HCT132 TSSOP14 MECHANICAL DATA mm. inch DIM. MIN. TYP A MAX. MIN. TYP. MAX. 1.2 A1 0.05 A2 0.8 b 0.047 0.15 0.002 0.004 0.006 1.05 0.031 0.039 0.041 0.19 0.30 0.007 c 0.09 0.20 0.004 D 4.9 5 5.1 0.193 E 6.2 6.4 6.6 0.244 E1 4.3 4.4 4.48 1 e bs 0.65 BSC K 0° L 0.45 let o s b 0.60 s ( t c 0.75 du ro P e 0.0089 0.197 0.201 0.252 0.260 0.173 0.176 0.0256 BSC 0° 8° 0.018 0.024 0.030 u d o r P e A O ) 8° 0.012 t e l o 0.169 ) s ( ct A2 A1 b O e K c L E D E1 PIN 1 IDENTIFICATION 1 0080337D 7/8 M74HCT132 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom © http://www.st.com 8/8