M74HCT368B1R

M 54/M74HCT367 M54/M74HCT368 HEX BUS BUFFER (3-STATE) HCT367 NON INVERTING, HCT368 INVERTING . . . . . . . HIGH SPEED tPD = 11 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA = 25 °C COMPATIBLE WITH TTL OUTPUTS VIH = 2V (MIN.) VIL = 0.8V (MAX) OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE |IOH| = IOL = 6 mA (MIN.) BALANCED PROPAGATION DELAYS tPLH = tPHL PIN AND FUNCTION COMPATIBLE WITH 54/74LS367/368 B1R (Plastic Package) F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) ORDER CODES : M54HCTXXXF1R M74HCTXXXM1R M74HCTXXXB1R M74HCTXXXC1R DESCRIPTION The M54/74HCT367 and the M54/74HCT368 are high speed CMOS HEX BUS BUFFER (3-STATE) fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. These devices contain six buffers, four buffers are controlled by an enable input (G1) and the other two buffers are controlled by the other enable input (G2) ; the outputs of each buffer group are enabled when G1 and/or G2 inputs are held low, and when held high these outputs are disabled to be high-impedance. These outputs are capable of driving up to 15 LSTTL loads. The designer has a choice of non-inverting outputs (HCT367) and inverting outputs (HCT368). All inputs are equipped with protection circuits against static discharge and transient excess voltage. This integrated circuit has input and output characteristics that are fully compatible with 54/74 LSTTL logic families. M54/74HCT devices are designed to directly interface HSC2MOS systems with TTL and NMOS components. They are also plug in replacements for LSTTL devices giving a reduction of power consumption. All inputs are equipped with protection circuits against static discharge and transient excess voltage. February 1993 PIN CONNECTIONS (top view) HCT368 HCT367 1/11 M54/M74HCT367/368 I NPUT AND OUTPUT EQUIVALENT CIRCUIT CHIP CARRIER HCT367 HCT368 NC = No Internal Connection TRUTH TABLE INPUTS G L L H X = DON’T CARE Z = HIGH IMPEDANCE OUTPUTS An L H X Y n (367) L H Z Yn (368) H L Z PIN DESCRIPTION (HCT367) PIN No 1, 15 2, 4, 6, 10, 12, 14 3, 5, 7, 9, 11, 13 8 16 SYMBOL G1, G2 1A to 6A 1Y to 6Y GND V CC NAME AND FUNCTION Output Enable Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage PIN DESCRIPTION (HCT368) PIN No 1, 15 2, 4, 6, 10, 12, 14 3, 5, 7, 9, 11, 13 8 16 SYMBOL G1, G2 1A to 6A 1Y to 6Y GND VCC NAME AND FUNCTION Output Enable Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage 2/11 M54/M74HCT367/368 I EC LOGIC SYMBOL HCT367 HCT368 ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO ICC or IGND PD Tstg TL Parameter Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 35 ± 70 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW o o C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Parameter Supply Voltage Input Voltage Output Voltage Operating Temperature: M54HC Series M74HC Series Input Rise and Fall Time (VCC = 4.5 to 5.5V) Value 4.5 to 5.5 0 to VCC 0 to VCC -55 to +125 -40 to +85 0 to 500 Unit V V V C o C o ns RECOMMENDED OPERATING CONDITIONS 3/11 M54/M74HCT367/368 D C SPECIFICATIONS Test Conditions Symbol Parameter VCC (V) 4.5 to 5.5 4.5 to 5.5 4.5 VI = IO=-20 µA VIH or IO=-6.0 mA V IL VI = IO= 20 µA VIH or IO= 6.0 mA V IL VI = VCC or GND VI = VCC or GND Per Input pin VI = 0.5V or V I = 2.4V Other Inputs at V CC or GND IO= 0 4.4 4.18 4.5 4.31 0.0 0.17 0.1 0.26 ±0.1 4 2.0 TA = 25 oC 54HC and 74HC Min. Typ. Max. 2.0 Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 2.0 2.0 Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage V V IL 0.8 0.8 0.8 V V OH 4.4 4.13 0.1 0.33 ±1 40 2.9 4.4 4.10 0.1 V 0.4 ±1 80 3.0 µA µA mA V VOL Low Level Output Voltage 4.5 II ICC ∆ICC Input Leakage Current Quiescent Supply Current Additional worst case supply current 5.5 5.5 5.5 4/11 M54/M74HCT367/368 A C ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns) Test Conditions Symbol Parameter VCC (V) 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 CL (pF) 50 50 150 50 150 50 150 50 TA = 25 C 54HC and 74HC Min. Typ. 7 14 18 15 19 16 20 18 5 47 55 Max. 12 22 28 24 30 25 31 25 10 o Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. 15 28 35 30 38 31 39 31 10 Min. Max. 18 33 42 36 45 38 47 38 10 Unit tTLH tTHL tPLH tPHL tPLH tPHL tPZL tPZH tPLZ tPHZ CIN CPD (*) Output Transition Time Propagation Delay Time (for HCT367 only) Propagation Delay Time (for HCT368 only) Output Enable Time Output Disable Time Input Capacitance Power Dissipation Capacitance ns ns ns ns ns pF pF fot HCT367 for HCT368 (*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/6 (per Channel) TEST CIRCUIT ICC (Opr.) C PD CALCULATION CPD is to be calculated with the following formula by using the measured value of ICC (opr.) in the test circuit opposite. ICC ( opr) CPD = fIN × VCC In determining the typical value of CPD, a relatively high frequency of 1 MHz was applied to fIN, in order to eliminate any error caused by the quiescent supply current. * INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST. 5/11 M54/M74HCT367/368 SWITCHING CHARACTERISTICS TEST WAVEFORM GND VCC Note : Such a logic level shall be applied to each input that the output voltage stays in the apposite side to the switch connection level, when the output is enabled. 6/11 M54/M74HCT367/368 Plastic DIP16 (0.25) MECHANICAL DATA mm MIN. a1 B b b1 D E e e3 F I L Z 3.3 1.27 8.5 2.54 17.78 7.1 5.1 0.130 0.050 0.51 0.77 0.5 0.25 20 0.335 0.100 0.700 0.280 0.201 1.65 TYP. MAX. MIN. 0.020 0.030 0.020 0.010 0.787 0.065 inch TYP. MAX. DIM. P001C 7/11 M54/M74HCT367/368 Ceramic DIP16/1 MECHANICAL DATA mm MIN. A B D E e3 F G H L M N P Q 7.8 2.29 0.4 1.17 0.22 0.51 0.38 17.78 2.79 0.55 1.52 0.31 1.27 10.3 8.05 5.08 0.307 0.090 0.016 0.046 0.009 0.020 3.3 0.015 0.700 0.110 0.022 0.060 0.012 0.050 0.406 0.317 0.200 TYP. MAX. 20 7 0.130 MIN. inch TYP. MAX. 0.787 0.276 DIM. P053D 8/11 M54/M74HCT367/368 SO16 (Narrow) MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 9.8 5.8 1.27 8.89 4.0 5.3 1.27 0.62 8° (max.) 0.149 0.181 0.019 10 6.2 0.35 0.19 0.5 45° (typ.) 0.385 0.228 0.050 0.350 0.157 0.208 0.050 0.024 0.393 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.004 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013H 9/11 M54/M74HCT367/368 PLCC20 MECHANICAL DATA mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 2.54 0.56 8.38 0.290 0.050 0.200 0.015 0.004 TYP. MAX. 10.03 9.04 4.57 MIN. 0.385 0.350 0.165 0.100 0.022 0.330 inch TYP. MAX. 0.395 0.356 0.180 DIM. P027A 10/11 M54/M74HCT367/368 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 11/11