MD2009DFX

MD2009DFX High voltage NPN power transistor for CRT TV Features ■ State-of-the-art technology: – diffused collector “enhanced generation” ■ Stable performance versus operating temperature variation ■ Low base drive requirement ■ Tight hFE range at operating collector current ■ Fully isolated power package UL compliant ■ Integrated free wheeling diode 3 1 2 TO-3PF Application ■ Horizontal deflection output for CRT TV Figure 1. Internal schematic diagram Description The MD2009DFX is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the horizontal deflection stage. Table 1. RBE=60Ω typ. Device summary Order code Marking Package Packaging MD2009DFX MD2009DFX TO-3PF Tube August 2009 Doc ID 12125 Rev 5 1/10 www.st.com 10 Electrical ratings 1 MD2009DFX Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit VCES Collector-emitter voltage (VBE = 0) 1500 V VCEO Collector-emitter voltage (IB = 0) 700 V VEBO Base-emitter voltage (IC = 0) 7 V Collector current 10 A Collector peak current (tP < 5ms) 16 A Base current 6 A PTOT Total dissipation at Tc = 25°C 58 W VISO Isolation withstand voltage (RMS) from all three leads to external heatsink 2500 V Tstg Storage temperature -65 to 150 150 °C Value Unit 2.15 °C/W IC ICM IB TJ Table 3. Symbol Rthj-case 2/10 Parameter Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case max Doc ID 12125 Rev 5 MD2009DFX 2 Electrical characteristics Electrical characteristics (Tcase =25°C unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit 0.2 2 mA mA 120 mA ICES Collector cut-off current (VBE = 0) VCE = 1500V VCE = 1500V, Tc= 125°C IEBO Emitter cut-off current (IC = 0) VEB = 5V 40 V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 700mA 10 VCE(sat)(1) Collector-emitter saturation voltage IC = 5.5A , IB = 1.4A 2.8 V VBE(sat)(1) Base-emitter saturation voltage IC = 5.5A , IB = 1.4A 1.3 V DC current gain IC = 1A, IC = 5.5A, IC = 5.5A , VCE = 5V VCE = 1V VCE = 5V hFE(1) VF (1) ts tf Diode forward voltage IF= 5.5 A Inductive load Storage time Fall time IC = 5A,,, fh = 16KHz IB(on) = 1.5A,, VBE(off) = -2.7V LBB(off) = 6.2µH V 18 4.7 5 7 4.5 0.3 1.6 V 6 0.6 µs µs 1. Pulse test: pulse duration ≤300 µs, duty cycle ≤2%. Doc ID 12125 Rev 5 3/10 Electrical characteristics MD2009DFX 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. Output characterisics Figure 5. Reverse biased SOA Figure 6. DC current gain (VCE = 1 V) Figure 7. DC current gain (VCE = 5 V) 4/10 Doc ID 12125 Rev 5 MD2009DFX Figure 8. Electrical characteristics Collector-emitter saturation voltage Figure 9. Figure 10. Power losses Base-emitter saturation voltage Figure 11. Inductive load switching time Doc ID 12125 Rev 5 5/10 Test circuits 3 MD2009DFX Test circuits Figure 12. Power losses and inductive load switching test circuit Figure 13. Reverse biased safe operating area test circuit 6/10 Doc ID 12125 Rev 5 MD2009DFX 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 12125 Rev 5 7/10 Package mechanical data Table 5. MD2009DFX TO-3PF package mechanical data mm. Dim. min. typ. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10 Figure 14. TO-3PF drawing 8/10 max. Doc ID 12125 Rev 5 10.20 MD2009DFX 5 Revision history Revision history Table 6. Document revision history Date Revision Changes 27-Feb-2006 1 First release 28-Mar-2006 2 New curves 9 and 10 inserted 22-May-2006 3 Values changed on Table 2 and Table 4 20-Oct-2006 4 New hFE limits shown on Table 4 10-Aug-2009 5 Update mechanical data Document reformatted, no content change Doc ID 12125 Rev 5 9/10 MD2009DFX Please Read Carefully: Information in this document is provided solely in connection with ST products. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10 Doc ID 12125 Rev 5