MD2103DFP

MD2103DFP High voltage NPN power transistor for standard definition CRT display Features ■ State-of-the-art technology: – Diffused collector “enhanced generation” ■ Stable performance versus operating temperature variation ■ Low base drive requirement ■ Tight hFE range at operating collector current ■ Fully insulated power package UL compliant ■ Integrated free wheeling diode du 3 o r P 1 2 TO-220FP e t e ol Applications ■ ) s ( ct Horizontal deflection output for TV s b O Description Figure 1. ) (s Internal schematic diagram The MD2103DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency briging updated performance to the horizontal deflection stage. t c u d o r P e RBE=65Ω (typ) t e l o s b O Table 1. Device summary Order code Marking Package Packing MD2103DFP MD2103DFP TO-220FP Tube May 2008 Rev 1 1/9 www.st.com 9 Electrical ratings MD2103DFP Electrical ratings 1 Table 2. Absolute maximum rating Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE =0) 1500 V VCEO Collector-emitter voltage (IB =0) 700 V VEBO Emitter-base voltage (IC =0) 7 V Collector current 6 A Collector peak current (tP < 5ms) 9 Base current 3 IC ICM IB Ptot Total dissipation at Tc ≤25°C VINS Insulation withstand voltage (RMS) from all three leads to external heatsink Tstg Storage temperature TJ Table 3. o s b Max. operating junction temperature O ) Thermal data Symbol s ( t c Parameter Rthj-case Thermal resistance junction-case max u d o r P e t e l o s b O 2/9 u d o 38 r P e let ) s ( ct A A W 1500 V -65 to 150 °C 150 °C Value Unit 3.3 °C/W MD2103DFP 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. VCE = 1500V ICES Collector cut-off current (VBE =0) IEBO Emitter cut-off current (IC =0) VEB = 5V Emitter-base brakdown voltage (IC = 0) IE = 700mA Collector-emitter saturation voltage IC = 3A _ _ IB =0.75A Base-emitter saturation voltage IC = 3A _ _ IB =0.75A IC = 1A VCE =5V 17 VCE =1V 6 V(BR)EBO VCE(sat) (1) VBE(sat) hFE (1) (1) VCE = 1500V IC = 3A ts tf VF Inductive load Storage time Fall time O ) u d o s ( t c Diode forward voltage r P e 50 11 IC =3A VCE =5V 6.5 Unit 0.2 2 mA mA 125 mA ) s ( ct u d o r P e t e l o bs IC = 3A DC current gain TC = 125°C Max. V 1.8 V 1.5 V 9.5 fh =16kHz IB(on) =0.5A VBE(off) =-2.7V LBB(off) =6.3µH (see Figure 12) IF = 3A 3.8 µs 0.25 µs 2 V Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% Note: t e l o s b O 3/9 Electrical characteristics 2.1 MD2103DFP Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve ) s ( ct Figure 4. Output characteristics u d o r P e Figure 5. Reverse biased SOA t e l o ) (s s b O t c u P e d o r Figure 6. t e l o s b O 4/9 DC current gain Figure 7. DC current gain MD2103DFP Electrical characteristics Figure 8. Collector-emitter saturation voltage Figure 10. Power losses Figure 9. Base-emitter saturation voltage ) s ( ct Figure 11. Inductive load switching time u d o r P e t e l o ) (s s b O t c u 2.2 d o r P e Test circuits t e l o Figure 12. Inductive load switching test circuit s b O 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier 5/9 Package mechanical data 3 MD2103DFP Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 6/9 s b O MD2103DFP Package mechanical data TO-220FP mechanical data mm. Dim. Min. A 4.40 Max. Min. 4.60 0.173 Typ. 0.181 Max. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.017 0.027 F 0.75 1.00 0.030 0.039 F1 1.15 1.50 0.045 0.067 F2 1.15 1.50 0.045 G 4.95 5.20 0.195 G1 2.40 2.70 0.094 H 10 10.40 0.393 L2 0.067 0.106 u d o 0.630 L3 28.6 30.6 1.126 L4 9.80 10.60 0.385 L5 2.9 3.6 0.114 L6 15.90 16.40 L7 9 9.30 Dia 3 3.2 ) (s Pr 0.409 1.204 0.417 0.141 0.645 0.366 0.118 0.126 E 0.354 D A B t e l o s b O t c u P e ete 0.626 ol ) s ( ct 0.204 16 d o r L3 L6 G G1 Dia F F1 L7 F2 H s b O inch Typ L2 L5 1 2 3 L4 7012510-I 7/9 Revision history 4 MD2103DFP Revision history Table 5. Document revision history Date Revision 27-May-2008 1 Changes First release ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 8/9 s b O MD2103DFP ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. t e l o Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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