MJ802

MJ802 ® SILICON NPN POWER TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJ802 is a silicon Epitaxial-Base power transistor mounted in Jedec TO-3 metal case. It is intended for general purpose power amplifier and switching applications. ) s ( ct r P e 2 let o s b O ) s ( t c u d o 1 TO-3 INTERNAL SCHEMATIC DIAGRAM u d o r P e t e l o s b O ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CEO Collector-emitter Voltage (I B = 0) V CBO Collector-base Voltage (I E = 0) V EBO Emitter-Base Voltage (I C = 0) IC Collector Current IB Base Current P tot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj o Max. Operating Junction Temperature October 2003 Value Unit 90 V 100 V 4 V 30 A 7.5 A 200 W -65 to 200 o C 200 o C 1/4 MJ802 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 0.875 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CBO Collector Cut-off Current (I E = 0) V CB = 100 V V CB = 100 V I EBO Emitter Cut-off Current (I C = 0) V EB = 4 V Min. I C = 200 mA 90 V CER(sus) ∗ Collector-emitter Sustaining Voltage (R BE = 100 Ω) I C = 200 mA 100 V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 7.5 A I B = 0.75 A V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 7.5 A I B = 0.75 A V BE ∗ Base-Emitter Voltage I C = 7.5 A V CE = 2 V h FE ∗ DC Current Gain I C = 7.5 A Transition Frequency IC = 1 A f = 1 MHz ) (s ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % t c u d o r P e t e l o s b O 2/4 Max. Unit 1 5 mA mA 1 mA T case = 150 o C V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) fT Typ. ol ete s b O V Pr u d o V CE = 2 V 25 V CE = 10 V 2 ) s ( ct V 0.8 V 1.3 V 1.3 V 100 MHz MJ802 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 E 19.00 20.00 0.748 G 10.70 11.10 0.421 N 16.50 17.20 0.649 P 25.00 26.00 R 4.00 4.09 U 38.50 V 30.00 -O 39.30 (s) od t c u e t e ol Pr ) s ( ct 0.351 du ro P e bs 30.30 1.023 0.157 0.161 1.515 1.547 1.187 1.193 A P 0.437 0.677 t e l o 0.984 0.787 D C G E O N B V U s b O R P003F 3/4 MJ802 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4