MJD122T4

MJD122 MJD127 Complementary power Darlington transistors Features ■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications 3 ■ General purpose linear and switching 1 Description DPAK The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Figure 1. Internal schematic diagrams NPN: R1= 7 KΩ R2= 70 Ω Table 1. Device summary Order codes Marking Polarity MJD122T4 MJD122 NPN MJD127T4 MJD127 PNP April 2009 PNP: R1= 16 KΩ R2= 60 Ω Doc ID 3541 Rev 11 Package Packaging DPAK Tape and reel 1/12 www.st.com 12 Content MJD122, MJD127 Content 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 3541 Rev 11 MJD122, MJD127 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 8 A Collector peak current 16 A 0.12 A 20 W -65 to 150 °C 150 °C Value Unit 6.25 °C/W IC ICM IB Base current PTOT Total dissipation at Tcase = 25°C Tstg Storage temperature TJ Note: Parameter Max. operating junction temperature For PNP types voltage and current values are negative. Table 3. Symbol Rthj-c Thermal data Parameter Thermal resistance junction-case max. Doc ID 3541 Rev 11 3/12 Electrical characteristics 2 MJD122, MJD127 Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Electrical characteristics Symbol ICBO Parameter Test conditions Collector cut-off current (IE = 0) Typ. Max. Unit VCB = 100 V - 10 µA ICEO Collector cut-off current (IB = 0) VCE = 50 V - 10 µA IEBO Emitter cut-off current (IC = 0) VEB = 5 V - 2 mA Collector-emitter VCEO(sus) (1) sustaining voltage (I = 0) IC = 30 mA B 100 Collector-emitter saturation voltage IC = 4 A _ IB = 16 mA IC = 8 A _ IB = 80 mA VBE(sat)(1) Base-emitter saturation voltage IC = 8 A VBE(on)(1) Base-emitter on voltage VCE(sat)(1) hFE (1) DC current gain 4/12 - V - 2 4 V V _ IB = 80 mA - 4.5 V IC = 4 A _ VCE = 4 V - 2.8 V IC = 4A VCE = 4 V 1000 IC = 8 A VCE = 4 V 100 1. Pulsed duration = 300 µs, duty cycle ≤1.5% Note: Min. For PNP types voltage and current values are negative. Doc ID 3541 Rev 11 - 12000 MJD122, MJD127 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain for NPN type Figure 5. DC current gain for PNP type AM00696v1 AM00697v1 hFE hFE 1000 1000 Tj= -40 °C Tj= 25 °C Tj=125 °C 100 Tj= -40 °C Tj= 25 °C Tj=125 °C 100 VCE= 3 V 10 0.01 Figure 6. 0.1 VCE= -3 V 1 10 -0.01 Ic(A) Collector-emitter saturation voltage Figure 7. for NPN type -0.1 -1 Ic(A) Collector-emitter saturation voltage for PNP type AM00698v1 VCE(sat) (V) AM00699v1 VCE(sat) (V) hFE= 250 hFE= 250 1.4 -1.4 1 -1 Tj= -40 °C Tj= 25 °C Tj=125 °C 0.6 0.2 0.1 1 Tj= -40 °C Tj= 25 °C Tj=125 °C -0.6 Ic(A) Doc ID 3541 Rev 11 -0.2 -0.1 -1 Ic(A) 5/12 Electrical characteristics Figure 8. MJD122, MJD127 Base-emitter saturation voltage for Figure 9. NPN type Base-emitter saturation voltage for PNP type AM00700v1 VBE(sat) (V) AM03261v1 VBE(sat) (V) hFE= 250 hFE= 250 2.0 -2.0 1.5 -1.5 Tj= -40 °C Tj= 25 °C Tj=125 °C 1.0 0.5 0.1 1 Tj= -40 °C Tj= 25 °C Tj=125 °C -1.0 -0.5 -0.1 Ic(A) Figure 10. Base-emitter on voltage for NPN type -1 Ic(A) Figure 11. Base-emitter on voltage for PNP type AM03262v1 VBE(on) (V) AM03263v1 VBE(on) (V) VCE= 3 V 2.0 -2.0 1.5 -1.5 Tj= -40 °C Tj= 25 °C Tj=125 °C 1.0 0.5 0.1 1 VCE= -3 V Tj= -40 °C Tj= 25 °C Tj=125 °C -1.0 -0.5 - 0.1 Ic(A) Figure 12. Resistive load switching times for NPN type (on) -1 Ic(A) Figure 13. Resistive load switching times for PNP type (on) AM03264v1 t(ns) AM03265v1 t(ns) Vcc= 30 V hFE=250 Vbeoff= - 5 V Ibon= - Iboff 100 Vcc= -30 V hFE=250 Vbeoff= 5 V -Ibon= Iboff 100 Delay time Rise time 10 0 6/12 1 2 3 4 5 Delay time Rise time Ic(A) Doc ID 3541 Rev 11 10 0 -1 -2 -3 -4 -5 Ic(A) MJD122, MJD127 Electrical characteristics Figure 14. Resistive load switching times for NPN type (off) Figure 15. Resistive load switching times for PNP type (off) AM03266v1 AM03267v1 t(ns) t(ns) Vcc= -30 V hFE=250 Vbeoff= 5 V -Ibon= Iboff 1000 Vcc= 30 V hFE=250 Vbeoff= - 5 V Ibon= - Iboff 1000 Storage time Fall time 100 0 1 3 2 4 Storage time Fall time 5 100 0 Ic(A) Figure 16. Capacitances for NPN type -1 -2 -3 -4 -5 Ic(A) Figure 17. Capacitances for PNP type AM03269v1 C(pF) AM03268v1 C(pF) F= 0.1 MHz F= 0.1 MHz CCB 100 10 0.01 CCB 100 CEB 0.1 1 10 VR(V) Doc ID 3541 Rev 11 10 0.01 CEB 0.1 1 10 VR(V) 7/12 Test circuits 3 MJD122, MJD127 Test circuits Figure 18. Resistive load switching for NPN type 1. Fast electronic switch 2. Non-inductive resistor Figure 19. Resistive load switching for PNP type 1. Fast electronic switch 2. Non-inductive resistor 8/12 Doc ID 3541 Rev 11 MJD122, MJD127 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 3541 Rev 11 9/12 Package mechanical data MJD122, MJD127 TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G 10/12 Doc ID 3541 Rev 11 MJD122, MJD127 5 Revision history Revision history Table 5. Document revision history Date Revision Changes 01-Aug-2002 8 01-Oct-2007 9 Collector current limits have been improved 03-Oct-2007 10 Package mechanical data updated 21-Apr-2009 11 The device MJD127 has been inserted Section 2.1: Electrical characteristics (curves) has been updated Doc ID 3541 Rev 11 11/12 MJD122, MJD127 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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