MJE182

MJE182 Low voltage high speed switching NPN transistor Features ■ High speed switching ■ NPN device ) s ( ct Applications ■ Audio amplifier ■ High speed switching applications u d o r P e Description This device is an NPN low voltage transistor manufactured using epitaxial planar technology and housed in a SOT-32 plastic package. It is designed for low power audio amplifiers and low current, high speed switching applications. ) (s t e l o s b O Figure 1.   SOT-32 Internal schematic diagram t c u d o r P e t e l o s b O Table 1. Device summary Order code Marking Package Packaging MJE182 MJE182 SOT-32 Tube August 2011 Doc ID 022074 Rev 1 1/7 www.st.com 7 Electrical ratings 1 MJE182 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Unit VCEO Collector-emitter voltage (IB = 0) 80 V VCBO Collector-base voltage (IE = 0) 100 V VEBO Base-emitter voltage (IC = 0) 7 V Collector current 3 A Collector peak current (tP < 5 ms) 6 Base current 1 IC ICM IB IBM Base peak current (tP < 5 ms) PTOT Total dissipation at Tc ≤ 25 °C Tstg Storage temperature TJ Table 3. RthJC Rth-amb ro 12.5 Thermal data t e l o s b O Parameter ) (s Thermal resistance junction-case_max ct Thermal resistance junction-ambient_max u d o P e r P e t e l o s b O Doc ID 022074 Rev 1 ) s ( ct du 2 Total power dissipation at Tc ≤ 25 °C Symbol 2/7 Value A A A W -65 to 150 °C 150 Value Unit 10 °C/W 83.3 °C/W MJE182 2 Electrical characteristics Electrical characteristics Tcase = 25 °C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB= 100 V VCB = 100 V, Tc = 150 °C 0.1 0.1 µA mA VEBO Emitter cut-off current (IC = 0) VEB = 7 V 0.1 µA Collector-emitter I = 10 mA sustaining voltage (IB = 0) C VCEO(sus)(1) Collector-emitter saturation voltage IC = 0.5 A IC = 1.5 A IC = 3 A IB = 50 mA IB = 0.15 A IB = 0.6 A VBE(sat) (1) Base-emitter saturation voltage IC = 1.5 A IC = 3 A IB = 0.15 A IB = 0.6 A VBE(on) (1) Base-emitter on voltage IC = 0.5 A DC current gain IC = 0.1 A IC = 0.5 A IC = 1.5 A VCE(sat) (1) hFE ) (s fT CCBO IC = 0.1 A f=10 MHz Collector-base capacitance (IE=0) VCB = 10 V d o r t c u ro VCE =1 V VCE = 1 V VCE = 1 V VCE = 1 V 50 30 12 VCE = 10 V 50 f= 0.1 MHz V du P e t e l o s b O Transistor frequency ) s ( ct 80 0.3 0.9 1.7 V 1.5 2 V V 1.2 V 250 MHz 40 pF 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 1.5 %. P e t e l o s b O Doc ID 022074 Rev 1 3/7 Package mechanical data 3 MJE182 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 4/7 Doc ID 022074 Rev 1 MJE182 Package mechanical data Table 5. SOT-32 (TO-126) mechanical data mm. Dim. Min. Typ. Max. A 2.40 2.90 B 0.64 0.88 B1 0.39 0.63 D 10.50 11.05 E 7.40 7.80 e 2.04 2.29 2.54 e1 4.07 4.58 5.08 L 15.30 ØP 2.90 Q 3.80 Q1 ete 1 ) s ( ct o r P du 16 3.20 1.52 l o s H2 2.15 I Figure 2. 1.27 b O SOT-32 (TO-126) drawing ) (s t c u d o r P e t e l o s b O ?2%6?% Doc ID 022074 Rev 1 5/7 Revision history 4 MJE182 Revision history Table 6. Document revision history Date Revision 08-Aug-2011 1 Changes Initial release ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 6/7 Doc ID 022074 Rev 1 MJE182 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. t e l o No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 022074 Rev 1 7/7