MJE3055T

MJE2955T MJE3055T ® COMPLEMENTARY SILICON POWER TRANSISTORS ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CEO V CBO V EBO IC IB P tot T stg Tj Collector-Emitter Voltage (I B = 0) Collector-Base Voltage (I E = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Power Dissipation at T case ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value MJE3055T MJE2955T 60 70 5 10 6 75 -55 to 150 150 Unit V V V A A W o C o C For PNP types voltage and current values are negative. September 2003 1/4 MJE2955T / MJE3055T THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.66 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 700 µA I CEO Collector Cut-off Current (I B = 0) V CE = 30 V I CEX Collector Cut-off Current (V BE = 1.5V) V CE = 70 V T case = 150 o C 1 5 mA mA I CBO Collector Cut-off Current (I E = 0) V CBO = 70 V T case = 150 o C 1 10 mA mA I EBO Emitter Cut-off Current (I C = 0) V EBO = 5 V 5 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 200 mA 60 V V CE(sat) ∗ Collector-Emitter Sustaining Voltage IC = 4 A I C = 10 A I B = 0.4 A I B = 3.3 A 1.1 8 V V V BE(on) ∗ Base-Emitter on Voltage IC = 4 A V CE = 4 V 1.8 V h FE DC Current Gain IC = 4 A I C = 10 A V CE = 4 V V CE = 4 V Transistor Frequency I C = 500 mA f = 500 KHz V CE = 10 V fT ∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 % For PNP type voltage and current values are negative. 2/4 20 5 2 70 MHz MJE2955T / MJE3055T TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 0.106 G1 2.40 2.70 0.094 H2 10.00 10.40 0.394 L2 16.40 0.409 0.645 L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 M DIA. 2.60 3.75 0.154 0.102 3.85 0.147 0.151 P011CI 3/4 MJE2955T / MJE3055T Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4