MMBT2222A

® MMBT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type MMBT2222A s Marking M22 s s s SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT2907A SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Emitter Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 m s) Total Dissipation at T amb = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 75 40 6 0.6 0.8 350 -65 to 150 150 Unit V V V A A mW o o C C February 2003 1/5 MMBT2222A THERMAL DATA R thj-amb • T hermal Resistance Junction-Ambient 2 Max 357.1 o C/W • Device mounted on a PCB area of 1 cm . ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I BEX I CBO I EBO Parameter Collector Cut-off Current (V BE = - 3 V) Base Cut-off Current (V BE = -3 V) Collector Cut-off Current (I E = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 6 0 V V CE = 6 0 V V CB = 75 V V CB = 75 V V EB = 3 V I C = 1 0 mA 40 Min. Typ. Max. 10 20 10 10 15 Unit nA nA nA µA nA V T j = 150 o C V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage DC Current Gain I C = 1 0 µA 75 V V (BR)EBO IE = 10 µA 6 V V CE(sat) ∗ V BE(sat) ∗ h FE ∗ I C = 1 50 mA I C = 5 00 mA I C = 1 50 mA I C = 5 00 mA IC IC IC IC IC IC = = = = = = 0 .1 mA 1 mA 1 0 mA 1 50 mA 1 50 mA 5 00 mA I B = 1 5 mA I B = 5 0 mA I B = 1 5 mA I B = 5 0 mA V CE = V CE = V CE = V CE = V CE = V CE = 10 V 10 V 10 V 10 V 1V 10 V 0.6 35 50 75 100 50 40 270 4 20 4 2 0.25 0.3 1 1.2 2 V V V V 300 fT C CBO C EBO NF hie ∗ h re ∗ Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure Input Impedance Reverse Voltage Ratio I C = 2 0 mA V CE = 2 0V f = 100MHz IE = 0 IC = 0 V CB = 1 0 V VEB = 0 .5 V f = 1 MHz f = 1MHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz 50 75 5 25 MHz 8 25 pF pF dB 8 1.25 8 4 300 375 35 200 µS µS KΩ KΩ 10 -4 10 -4 I C = 0 .1 mA V CE = 1 0 V ∆ f = 200 Hz R G = 1 KΩ V CE = 1 0 V V CE = 1 0 V V CE = 1 0 V V CE = 1 0 V V CE = 1 0 V V CE = 1 0 V V CE = 1 0 V V CE = 1 0 V IC = 1 mA I C = 1 0 mA IC = 1 mA I C = 1 0 mA IC = 1 mA I C = 1 0 mA IC = 1 mA I C = 1 0 mA hfe ∗ h oe ∗ Small Signal Current Gain Output Admittance ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/5 MMBT2222A ELECTRICAL CHARACTERISTICS (Continued) Symbol td tr ts tf Parameter Delay Time Rise Time Storage Time Fall Time Test Conditions I C = 1 50 mA V CC = 3 0 V I C = 1 50 mA V CC = 3 0 V I B = 1 5 mA I B1 = - I B2 = 1 5 mA Min. Typ. 5 12 185 24 Max. 10 25 225 60 Unit ns ns ns ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 3/5 MMBT2222A SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 4/5 MMBT2222A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5