MMBT2907A

® MMBT2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type MMBT2907A s Marking M29 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT2222A SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Emitter Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 m s) Total Dissipation at T amb = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value -60 -60 -5 -0.6 -0.8 350 -65 to 150 150 Unit V V V A A mW o o C C February 2003 1/4 MMBT2907A THERMAL DATA R thj-amb • Thermal Resistance Junction-Ambient 2 Max 357.1 o C/W • Device mounted on a PCB area of 1 cm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I BEX I CBO Parameter Collector Cut-off Current (V BE = - 3 V) Base Cut-off Current (V BE = -3 V) Collector Cut-off Current (I E = 0 ) Test Conditions V CE = - 30 V V CE = - 30 V V CB = - 50 V I C = - 10 mA -60 Min. Typ. Max. -50 -50 -10 Unit nA nA nA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage DC Current Gain I C = - 10 µ A -60 V V (BR)EBO I E = -10 µ A -5 V V CE(sat) ∗ V BE(sat) ∗ h FE ∗ I C = - 150 mA I C = - 500 mA I C = - 150 mA I C = - 500 mA IC IC IC IC IC = = = = = - 0.1 mA - 1 mA - 10 mA - 150 mA - 500 mA I B = -15 mA I B = -50 mA I B = -15 mA I B = -50 mA V CE = - 10 V V CE = - 10 V V CE = - 10 V V CE = - 10 V V CE = - 10 V f = 1 MHz f = 1 MHz 75 100 100 100 50 200 -0.4 -1.6 -1.3 -2.6 V V V V 300 MHz 8 30 10 40 45 pF pF ns ns ns ns 30 220 ns ns fT C CBO C EBO td tr t on ts tf t off Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Delay Time Rise Time Switching On Time Storage Time Fall Time Switching Off Time I C = - 50 mA V CE = - 20V f = 100MHz IE = 0 IC = 0 V CB = - 10 V V EB = - 2 V I C = - 150 mA V CC = - 30V I B = - 15 mA I C = - 150 mA V CC = - 30V I B1 = - I B2 = -15mA 190 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 MMBT2907A SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 MMBT2907A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4