MMBT8550D(2TY)

MMBT8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Collector Base Voltage -VCBO Collector Emitter Voltage -VCEO Emitter Base Voltage -VEBO Collector Current E T -IC Power Dissipation Ptot Junction Temperature Tj Storage Temperature Range TStg M E Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA S at -VCE = 1 V, -IC = 500 mA Collector Base Cutoff Current at -VCB = 35 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA H C Value Unit 40 V 25 V 6 V 600 mA 350 mW 150 O - 55 to + 150 O C C Symbol Min. Typ. Max. Unit hFE hFE hFE 100 160 40 - 250 400 - - -ICBO - - 100 nA -V(BR)CBO 40 - - V -V(BR)CEO 25 - - V -V(BR)EBO 6 - - V -VCE(sat) - - 0.5 V -VBE(sat) - - 1.2 V fT - 100 - MHz MMBT8550C MMBT8550D SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 11/04/2008 MMBT8550 M E S E T H C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 11/04/2008