MP23AB01DHTR

MP23AB01DH High-performance MEMS audio sensor: fully differential analog bottom-port microphone Datasheet - production data Description The MP23AB01DH is a compact, low-power microphone built with a capacitive sensing element and an IC interface. The sensing element, capable of detecting acoustic waves, is manufactured using a specialized silicon micromachining process to produce audio sensors. The MP23AB01DH has sensitivity of 38 dB ±1 dB, an acoustic overload point of 135 dBSPL with minimum 65 dB signal-to-noise ratio. The MP23AB01DH has fully differential output in order to minimize common mode noise. Features • • • • • • • • Single supply voltage operation Fully differential output Omnidirectional sensitivity High signal-to-noise ratio High bandwidth Package compliant with reflow soldering High RF immunity ECOPACK®, RoHS, and “Green” compliant August 2017 The MP23AB01DH is available in a package compliant with reflow soldering and is guaranteed to operate over an extended temperature range from -40 °C to +85 °C. Table 1: Device summary Order code Temp. range (°C) Package Packing MP23AB01DH -40 to +85 (3.35 x 2.5 x 0.98) mm Tray MP23AB01DHTR -40 to +85 (3.35 x 2.5 x 0.98) mm Tape and reel DocID030017 Rev 2 This is information on a product in full production. 1/12 www.st.com Contents MP23AB01DH Contents 1 Pin description ................................................................................ 3 2 Acoustic and electrical specifications ........................................... 4 2.1 Acoustic and electrical characteristics............................................... 4 2.2 Frequency response ......................................................................... 5 3 Absolute maximum ratings............................................................. 6 4 Application recommendations ....................................................... 7 4.1 5 6 7 2/12 MP23AB01DH schematic hints ......................................................... 7 Package information ....................................................................... 8 5.1 Soldering information ........................................................................ 8 5.2 RHLGA 4-lead package information.................................................. 9 Reliability tests .............................................................................. 10 Revision history ............................................................................ 11 DocID030017 Rev 2 MP23AB01DH 1 Pin description Pin description Figure 1: Pin connections 1 2 3 4 Table 2: Pin description Pin number Pin name Function 1 Vdd 2 Output– Power supply Negative output signal 3 Output+ Positive output signal 4 Ground Ground DocID030017 Rev 2 3/12 Acoustic and electrical specifications MP23AB01DH 2 Acoustic and electrical specifications 2.1 Acoustic and electrical characteristics The values listed in the table below are specified for Vdd = 2.7 V, No Load, Tamb = 25 °C unless otherwise specified. Table 3: Acoustic and electrical characteristics Symbol Parameter Test condition Min. Typ. (1) Max. Unit 2.3 2.7 3.6 V 250 µA -37 dBV Vdd Supply voltage Idd Current consumption So Sensitivity @1 kHz (0 dB = 1 V/Pa) -39 SNR Signal-to-noise ratio A-weighted (20 Hz - 20 kHz) 65 PSR Power supply rejection 100 mVpp sine wave @217 Hz AOP Acoustic overload point Zout Output impedance 400 Ω Cload Load capacitance 150 pF Rload Load resistance 30 Operating temperature range -40 Top -38 dB(A) -100 dB 135 dBSPL κΩ +85 Notes: (1)Typical specifications are not guaranteed. Table 4: Typical distortion specifications at 1 kHz sine wave input Parameter THD+N 4/12 Test condition Typ. value 94 dBSPL < 0.2% 110 dBSPL < 0.5% 120 dBSPL < 3% 130 dBSPL < 5% DocID030017 Rev 2 °C MP23AB01DH 2.2 Acoustic and electrical specifications Frequency response Figure 2: Typical free-field frequency response normalized at 1 kHz DocID030017 Rev 2 5/12 Absolute maximum ratings 3 MP23AB01DH Absolute maximum ratings Stresses above those listed as “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Table 5: Absolute maximum ratings Symbol Ratings Maximum value Unit Vdd Supply voltage -0.5 to 4.8 V TSTG Storage temperature range -40 to +105 °C ESD (HBM) ANSI/ESDA/JEDEC JS001 ±2000 V ESD (MM) EIA/JESD22-A115 ±200 V ESD (CDM) JESD22-C101 ±750 V Per IEC61000-4-2, 3 discharges, 150 pF, 330 Ω direct contact to housing. MIC must be at zero potential before each discharge. ±8000 V ESD (1) Notes: (1)Bypass 6/12 capacitor 200 nF or 1 µF (better), is definitely recommended for ESD main clamp integrity. DocID030017 Rev 2 MP23AB01DH Application recommendations 4 Application recommendations 4.1 MP23AB01DH schematic hints Figure 3: MP23AB01DH electrical connections and external component values Vdd Pin 1 Vdd Pin 3 Output + C1 C2 MP23AB01DH Pin 2 Output GND Pin 4 (Ground) Typical Values C1 = 100 nF C2 = 1 µF DocID030017 Rev 2 7/12 Package information 5 MP23AB01DH Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 5.1 Soldering information Figure 4: Recommended soldering profile limits tp TP CRITICAL ZONE RAMP-UP TL to T P TL tL TEMPERATURE TSMAX TSMIN ts PREHEAT RAMP-DOWN T25° to PEAK 30 60 90 120 150 180 210 TIME 240 270 300 330 360 390 Table 6: Recommended soldering profile limits Description Average ramp rate Preheat Minimum temperature Maximum temperature Time (TSMIN to TSMAX) Ramp-up rate Pb free TL to TP 3 °C/sec max TSMIN TSMAX tS 150 °C 200 °C 60 sec to 120 sec TSMAX to TL Time maintained above liquidus temperature Liquidus temperature tL TL 60 sec to 150 sec 217 °C Peak temperature TP 260 °C max Time within 5 °C of actual peak temperature 8/12 Parameter 20 sec to 40 sec Ramp-down rate 6 °C/sec max Time 25 °C (t = 25 °C) to peak temperature 8 minutes max DocID030017 Rev 2 MP23AB01DH 5.2 Package information RHLGA 4-lead package information Figure 5: RHLGA metal cap 4-lead (3.35 x 2.5 x 0.98 mm) package outline and mechanical dimensions Dimensions are in millimeter unless otherwise specified General Tolerance is +/-0.15mm unless otherwise specified OUTER DIMENSIONS ITEM Length [L] Width [W] Height [H] Sound port [AP] DIMENSION [mm] 3.35 2.5 0.98 Ø 0.35 TOLERANCE [mm] ±0.1 ±0.1 ±0.1 ±0.05 8573114_2 DocID030017 Rev 2 9/12 Reliability tests 6 MP23AB01DH Reliability tests The device passed all reliability tests on three different assembly lots under the following conditions given in the table below. Table 7: Tests and summary of results Test name Description Conditions HTOL: High Temperature Operating Life The device is stressed in dynamic configuration, approaching the operative max. absolute ratings in terms of junction temperature, load current, internal power dissipation. Vdd(max) = 3.6 V; Tamb = 125 °C JESD22a108 HTS: High Temperature Storage The device is stored in an unbiased condition at the maximum temperature allowed by the package materials, sometimes higher than the maximum operative temperature. Ta = 125 °C JESD22a103 PC (JL3): Preconditioning (solder simulation) The device is submitted to a typical temperature profile used for surface mounting, after controlled moisture absorption TC: Temperature Cycling The device is submitted to cycled temperature excursions, between a hot and a cold chamber in air atmosphere Voltage ±2000 V JEDEC / JESD22-A114E ESD (HBM): Electrostatic Discharge (Human Body Model) ESD (MM): Electrostatic Discharge (Machine Model) Ta Cycling: -40 °C ±125 °C JESD22a104 The device is submitted to a high voltage peak on all his pins simulating ESD stress according to different simulation models. ESD (CDM): Electrostatic Discharge (Charged Device Model) Voltage ±200 V JEDEC/JESD-A115-A Voltage ±750 V ANSI / ESD STM 5.3.1 ESDA LU (CI): Latch-up (Overvoltage and Current Injection) The device is submitted to a direct current forced/sunk into the input/output pins. Removing the direct current, no change in the supply current must be observed. Current injection ±200 mA Overvoltage 1.5 x Vmax EIA/JESD78 THB: Temperature Humidity Bias The device is biased in static configuration minimizing its internal power dissipation, and stored at controlled conditions for ambient temperature and relative humidity. Vdd(nom) = 2.7 V T = 85 °C / RH = 85% JESD22a108 LTS: Low Temperature Storage The device is stored in an unbiased condition at the min. temperature allowed by the package materials, sometimes lower than the min. op. temp Ta = -40 °C JESD22a119 MS: Mechanical Shock The device is submitted to 10000 g / 0.1 ms 5 shocks for each axis. 10000 g / 0.1 ms 5 shocks for each axis, under bias MIL STD 883MIL 10/12 DocID030017 Rev 2 MP23AB01DH 7 Revision history Revision history Table 8: Document revision history Date Revision Changes 17-Nov-2016 1 Initial release 31-Aug-2017 2 Updated Figure 3: "MP23AB01DH electrical connections and external component values" DocID030017 Rev 2 11/12 MP23AB01DH IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 12/12 DocID030017 Rev 2