MSC1000M
RF & MICROWAVE TRANSISTORS A VIONICS APPLICATIONS
. . . . .
RUGGEDIZED VSWR ∞:1 INPUT MATCHING LOW THERMAL RESISTANCE CLASS A OPERATION POUT = 0.6 W MIN. WITH 10.8 dB GAIN
.280 2LFL (S058) epoxy sealed ORDER CODE MSC1000M BRANDING 1000M
PIN CONNECTION DESCRIPTION The MSC1000M is a Class A, common emitter transistor with an emitter ballasted Matrix geometry specifically designed for DME/IFF driver applications. This device is capable of withstanding a ∞:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi-automatic wire bonding techniques ensure high reliability and product consistency. The MSC1000M is housed in the IMPAC™ package with internal input matching. ABSOLUTE MAXIMUM RATINGS (T case = 2 5 ° C)
Symbol Parameter Value Unit
1. Collector 2. Emitter
3. Base 4. Emitter
PDISS IC VCE TJ TSTG
Power Dissipation* Device Current*
(See Safe Area)
— 300 20 200 − 65 to +150
W mA V °C °C
Collector-Emitter Bias Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 35 °C/W
*Applies only to rated RF amplifier operation
October 1992
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E LECTRICAL SPECIFICATIONS ( T case = 2 5 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCEO ICES hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VCE = 28V VCE = 5V
IE = 0mA IC = 0mA IB = 0mA IC = 100mA
50 3.5 20 — 15
— — — — —
— — — 1.0 120
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
POUT GP
Note:
f = 1025 — 1150 MHz PIN = 50 mW f = 1025 — 1150 MHz PIN = 50 mW
10 µ Sec 1% IC
VCE = 18 V VCE = 18 V
0.6 10.8
0.85 12.3
— —
W dB
= = TYPICAL PERFORMANCE
Pulse Width Duty Cycle
=
1 20mA
BROADBAND POWER AMPLIFIER
NARROWBAND POWER OUTPUT vs FREQUENCY
MAXIMUM OPERATING AREA for FORWARD BIAS OPERATION
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TYPICAL S − PARAMETERS
S11
S22
VCE = 18 V IC = 120 mA Zg = 50 ohms
S21
S12
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TEST CIRCUIT Ref.: Dwg No. C127297
All dimensions are in inches.
P ACKAGE MECHANICAL DATA
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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