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MSC1004

MSC1004

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    MSC1004 - RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
MSC1004 数据手册
MSC1004M R F & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . 1025 - 1150 MHz RUGGEDIZED VSWR ∞:1 INTERNAL INPUT MATCHING LOW THERMAL RESISTANCE POUT = 4.0 W MIN. WITH 9.0 dB GAIN .280 2L FL (SO68) epoxy sealed ORDER CO DE MSC1004M BRANDING 1004M PIN CONNECTION DESCRIPTION The MSC1004M is a low-level Class C pulsed transistor specifically designed for DME/IFF driver or output applications. These devices are capable of withstanding a ∞:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and automatic bonding techniques ensure high reliability and product consistency. The MSC1004M is housed in the IMPAC™ package with internal input matching. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Valu e Un it PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100 °C) 18 650 32 200 − 65 to +150 W mA V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 5 °C/W *Applies only to rated RF amplifier operation June 12, 1995 1/3 MSC1004M E LECTRICAL SPECIFICATIONS (T case = 25 °C) STATIC Symbo l T est Co nditions Value Min . T yp. Max. Unit BVCBO BVCER BVEBO ICES hFE DYNAMIC Symbo l IC = 1 mA IC = 5 mA IE = 1 mA VCE = 28 V VCE = 5 V IE = 0 mA RBE = 10 Ω IC = 0mA IC = 200 mA 45 45 3.5  30 — — — — — — — — 1.0 300 V V V mA — Test Cond ition s Valu e Min. T yp. Max. Un it POUT ηc GP Note: f = 1025 − 1150 MHz f = 1025 − 1150 MHz f = 1025 − 1150 MHz = 10 µSec = 1% PIN = 500 mW PIN = 500 mW PIN = 500 mW VCC = 28 V VCC = 28 V VCC = 28 V 4.0 35 9.0    — — — W % dB Pul se Wi dth Duty Cycl e TEST CIRCUIT Ref.: Dwg. No. C127299 All dimensions are in inches. June 12, 1995 2/3 MSC1004M P ACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0218 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. June 12, 1995 3/3
MSC1004
1. 物料型号: - MSC1004M

2. 器件简介: - MSC1004M是一款专为DME/IFF驱动器或输出应用设计的低级C类脉冲晶体管。这些器件能够在全额定条件下承受任意相位角的∞:1负载VSWR。低RF热阻和自动键合技术确保了高可靠性和产品一致性。

3. 引脚分配: - 1. Collector(集电极) - 2. Base(基极) - 3. Emitter(发射极)

4. 参数特性: - 绝对最大额定值(Tcase = 25°C): - PDISs(功率耗散):18W - Ic(器件电流):650mA - Vcc(集电极供电电压):32V - TJ(结温):200℃ - TSTG(储存温度):-65至+150℃ - 热阻(RTH(j-c)):5℃/W

5. 功能详解: - 电气规格(Tcase = 25°C): - 静态特性: - BVCBO(集电极-基极电压):45V - BVCER(集电极-发射极电压):45V - BVEBO(基极-发射极电压):3.5V - ICES(集电极漏电流):1.0mA - hFE(电流增益):30至300 - 动态特性: - POUT(输出功率):4.0W - nc(回波损耗):35% - GP(功率增益):9.0dB - 注意:脉冲宽度=10微秒,占空比=1%

6. 应用信息: - MSC1004M适用于DME/IFF驱动器或输出应用。

7. 封装信息: - MSC1004M采用IMPAC封装,具有内部输入匹配。
MSC1004 价格&库存

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