MSC81010
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . .
EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHz
.230 2L STUD (S016) hermetically sealed ORDER CODE MSC81010 BRANDING 81010
PIN CONNECTION
DESCRIPTION The MSC81010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions. The MSC81010 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter
1. Collector 2. Base
3. Emitter
Value
Unit
PDISS IC VCC TJ T STG
Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature
29 1.0 35 200 − 65 to +200
W A V °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 6.0 °C/W
*Applies only to rated RF amplifier operation
October 1992
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E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER I CBO hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 10mA VCB = 28V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω IC = 500mA
45 3.5 45 — 15
— — — — —
— — — 2.5 120
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
POUT ηc GP COB
f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1 MHz
PIN = 1.0 W PIN = 1.0 W PIN = 1.0 W VCB = 28 V
VCC = 28 V VCC = 28 V VCC = 28 V
10 60 10 —
11 64 10.4 —
— — — 10
W % dB pF
TYPICAL PERFORMANCE POWER OUTPUT vs FREQUENCY
FREQUENCY vs COLLECTOR EFFICIENCY
RELATIVE POWER OUTPUT vs COLLECTOR VOLTAGE
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IMPEDANCE DATA
T YPICAL INPUT IMPEDANCE
ZIN
PIN = 1.0 W VCC = 28 V Normalized to 50 ohms
FREQ. 0.4 GHz 0.6 GHz 0.8 GHz 1.0 GHz 1.2 GHz
ZIN (Ω) 2.3 + j 2.7 2.5 + j 4.0 2.8 + j 5.0 3.0 + j 6.0 3.3 + j 7.2
ZCL (Ω) 26.0 + j 16.0 17.2 + j 13.0 11.0 + j 9.5 7.7 + j 6.3 5.8 + j 3.5
TYPICAL COLLECTOR LOAD IMPEDANCE
ZCL
POUT = Saturated VCC = 28 V Normalized to 50 ohms
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TEST CIRCUIT Ref.: Dwg. No. C127320 All dimensions are in inches. Frequency 1.0 GHz
P ACKAGE MECHANICAL DATA
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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