MSC81250M

MSC81250M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE P OUT = 250 W MIN. WITH 6.2 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE MSC81250M BRANDING 81250M PIN CONNECTION DESCRIPTION The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency. The MSC81250M is housed in the unique AMPAC™ package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 80°C) 600 17.8 55 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.20 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81250M E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE DYNAMIC Symbol IC = 10mA IE = 1mA IC = 25mA VCE = 50V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 1A 65 3.5 65 — 15 — — — — — — — — 25 120 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc GP Note: f = 1025 — 1150 MHz PIN = 60 W f = 1025 — 1150 MHz PIN = 60 W f = 1025 — 1150 MHz PIN = 60 W = = 10 µ Sec 1% VCC = 50 V VCC = 50 V VCC = 50 V 250 40 6.2 270 38 6.5 — — — W % dB Pulse W idth Duty Cycle 2/5 MSC81250M IMPEDANCE DATA T YPICAL INPUT IMPEDANCE ZIN PIN = 60 W VCC = 50 V Normalized to 50 ohms FREQ. L = 1025 MHz M = 1090 MHz H = 1150 MHz ZIN (Ω) 4.2 + j 6.7 4.0 + j 3.5 2.3 + j 2.3 ZCL (Ω) 2.0 − j 7.5 2.5 − j 7.5 2.5 − j 8.5 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL PIN = 60 W VCC = 50 V Normalized to 50 ohms 3/5 MSC81250M TEST CIRCUIT Ref.: Dwg. No. C127470 All dimensions are in inches. PACKAGE MECHANICAL DATA 4/5 MSC81250M Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5