MSC81325M

MSC81325M RF & MICROWAVE TRANSISTORS A VIONICS APPLICATIONS . . . . . . . P RELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED VSWR ∞:1 INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.7 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE MSC81325M BRANDING 81325M PIN CONNECTION DESCRIPTION The MSC81325M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product consistency. The MSC81325M is housed in the industry-standard AMPAC™ metal/ceramic hermetic package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 2 5 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 100˚C) 880 24 55 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.17 °C/W *Applies only to rated RF amplifier operation October 1992 1/3 MSC81325M E LECTRICAL SPECIFICATIONS ( T case = 2 5 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE DYNAMIC Symbol IC = 10mA IE = 1mA IC = 25mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω VCE = 50V IC = 1A 65 3.5 65 — 15 — — — — — — — — 25 120 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc GP Note: f = 1025 — 1150 MHz PIN = 70 W f = 1025 — 1150 MHz PIN = 70 W f = 1025 — 1150 MHz PIN = 70 W = = 10 µ Sec 1% VCC = 50 V VCC = 50 V VCC = 50 V 325 40 6.7 360 41 7.1 — — — W % dB Pulse Width Duty Cycle TEST CIRCUIT All dimensions are in inches. Ref.: Dwg. No. C127471 2/3 MSC81325M P ACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 3/3