MSC82100
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
. . . . . . .
EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY ∞:1 @ RATED CONDITIONS ft 1.6 GHz TYPICAL NOISE FIGURE 15.5 dB @ 2 GHz P OUT = 27 dBm MIN. @ 1.0 GHz
.250 2LFL (S011) hermetically sealed ORDER CODE MSC82100 BRANDING 82100
PIN CONNECTION
DESCRIPTION The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Emitter
3. Base 4. Emitter
PDISS IC VCE TJ T STG
Power Dissipation Device Bias Current
(see Safe Area)
— 200 20 200 − 65 to +200
W mA V °C °C
Collector-Emitter Bias Voltage* Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W
*Applies only to rated RF amplifier operation
October 1992
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E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCEO I CEO hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VCE = 18V VCE = 5V
IE = 0mA IC = 0mA IB = 0mA IC = 100mA
45 3.5 20 — 15
— — — — —
— — — 0.5 120
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
G P* ∆ GP * COB
* Note:
f = 1.0 GHz f = 1.0 GHz f = 1 MHz
POUT = 27 dBm POUT = 27 dBm VCB = 28 V ∆POUT = 10 dB
10.5 — —
11.5 — —
— 1 3.2
dB dB pF
IC = 100mA
VCE = 18V
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T YPICAL PERFORMANCE TYPICAL POWER OUTPUT & GAIN @ 1dB COMPRESSION POINT vs FREQUENCY
TYPICAL POWER OUTPUT & GAIN @ 1dB COMPRESSION POINT vs COLLECTOR CURRENT
MAXIMUM OPERATING AREA FOR FORWARD BIAS OPERATION
TYPICAL LINEAR GAIN vs COLLECTOR CURRENT
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TYPICAL S −PARAMETERS
VCE = 18 V IC = 100 mA Zg = 50 ohms
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TEST CIRCUIT Ref.: Dwg. No. C127323
All dimensions are in inches. Frequency 1.0 GHz
P ACKAGE MECHANICAL DATA
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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