MSC82304
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . .
P RELIMINARY DATA
REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY 20:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 3.8 W MIN. WITH 10.0 dB GAIN
.250 2LFL (S010) hermetically sealed ORDER CODE MSC82304 BRANDING 82304
PIN CONNECTION
DESCRIPTION The MSC82304 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82304 was designed for Class C Amplifier/Oscillator applications in the 1.5 - 2.3 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 50°C)
11.5 600 26 200 − 65 to +200
W mA V °C °C
Collector-Supply Voltage* Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 13 °C/W
*Applies only to rated RF amplifier operation
October 1992
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MSC82304
E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER I CBO hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VCB = 22V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω IC = 250mA
44 3.5 44 — 30
— — — — —
— — — 0.5 300
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
POUT ηc GP COB
f = 2.3 GHz f = 2.3 GHz f = 2.3 GHz f = 1 MHz
PIN = 0.38 W PIN = 0.38 W PIN = 0.38 W VCB = 22 V
VCC = 22 V VCC = 22 V VCC = 22 V
3.8 40 10.0 —
— — — —
— — — 5.0
W % dB pF
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MSC82304
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE Z IN
ZIN H M
TYPICAL COLLECTOR LOAD IMPEDANCE ZCL
L
ZCL FREQ. L = 2.0 GHz ZIN (Ω) 3.95 + j 13.0 ZCL (Ω) 4.9 − j 1.95 4.2 − j 4.7 3.0 − j 6.5 H
L M
M = 2.15 GHz 3.90 + j 16.0 H = 2.3 GHz 3.45 + j 17.0
PIN = 0.38 W VCC = 22 V Normalized to 50 ohms
T EST CIRCUIT Ref.: Dwg. No. C125518
All dimensions are in inches. Frequency 2.3 GHz
RF Amplifier Power Output Test
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MSC82304
P ACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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