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MSC82307

MSC82307

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    MSC82307 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
MSC82307 数据手册
MSC82307 RF & MICROWAVE TRANSISTORS G ENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . P RELIMINARY DATA REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY 20:1 @ RATED CONDITIONS HERMETIC STRIPAC® PACKAGE POUT = 7.0 W MIN. WITH 9.6 dB GAIN .250 2LFL (S010) hermetically sealed ORDER CODE MSC82307 BRANDING 82307 PIN CONNECTION DESCRIPTION The MSC82307 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82307 was designed for Class C amplifier/oscillator applications in the 1.5 - 2.3 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 2 5 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 50˚C) 21.4 1.2 26 200 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 7.0 °C/W *Applies only to rated RF amplifier operation October 1992 1/3 MSC82307 E LECTRICAL SPECIFICATIONS ( T case = 2 5 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICBO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCB = 22V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 500mA 44 3.5 44 — 30 — — — — — — — — 0.5 300 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc GP COB f = 2.3 GHz f = 2.3 GHz f = 2.3 GHz f = 1 MHz PIN = 0.76 W PIN = 0.76 W PIN = 0.76 W VCB = 22 V VCC = 22 V VCC = 22 V VCC = 22 V 7.0 40 9.6 — 8.0 45 10.2 — — — — 8.5 W % dB pF TEST CIRCUIT Ref.: Dwg. No. C125518 All dimensions are in inches. Frequency 2.3 GHz RF Amplifier Power Output Test 2/3 MSC82307 P ACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 3/3
MSC82307
1. 物料型号: - 型号为MSC82307。

2. 器件简介: - MSC82307是一款通用基极密封的硅NPN微波功率晶体管,采用坚固的覆盖式芯片几何结构。该器件能够在额定条件下承受20:1的负载VSWR(电压驻波比)于任何相位角。

3. 引脚分配: - 1. 集电极(Collector) - 2. 基极(Base) - 3. 发射极(Emitter) - 4. 基极(Base)

4. 参数特性: - 最大额定值(Tcase = 25°C): - PDISs(Tc ≤50°C时的功率耗散):21.4W - Ic(器件电流):1.2A - Vcc(集电极-供电电压):26V - TJ(结温):200°C - TSTG(储存温度):-65至+200°C

5. 功能详解: - MSC82307设计用于1.5 - 2.3 GHz频率范围内的C类放大器/振荡器应用。

6. 应用信息: - 适用于1.5 - 2.3 GHz频率范围内的C类放大器/振荡器应用。

7. 封装信息: - 封装为.250 2LFL(S010)密封型。
MSC82307 价格&库存

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