MSC83301

MSC83301 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 1.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC83301 BRANDING 83301 PIN CONNECTION DESCRIPTION The MSC83301 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83301 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 50°C) 6.0 200 30 200 − 65 to +200 W mA V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 25 °C/W *Applies only to rated RF amplifier operation September 2, 1994 1/5 MSC83301 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol I C = 1 mA I E = 1 mA I C = 5 mA VCB = 28V VCE = 5 V IE = 0 mA IC = 0 mA RBE = 10 Ω IC = 100 mA 45 3.5 45 — 30 — — — — — — — — 0.5 300 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc PG COB f = 3.0 GHz f = 3.0 GHz f = 3.0 GHz f = 1 MHz PIN = 0.20 W PIN = 0.20 W PIN = 0.20 W VCB = 28 V VCC = 28 V VCC = 28 V VCC = 28 V 1.0 33 7.0 — 1.3 36 8.1 — — — — 3.5 W % dB pF TYPICAL PERFORMANCE TYPICAL COLLECTOR EFFICIENCY vs FREQUENCY TYPICAL POWER OUTPUT vs FREQUENCY PERCENT POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE 2/5 MSC83301 IMPEDANCE DATA T YPICAL INPUT IMPEDANCE ZIN FREQ. 1.0 GHz 1.7 GHz 2.0 GHz 2.3 GHz 2.7 GHz 3.0 GHz Z IN (Ω) 9.0 + j 9.0 9.5 + j 23.0 18.0 + j 34.5 28.0 + j 41.0 49.0 + j 39.0 65.0 + j 22.0 ZCL (Ω) 21.0 + j 48.0 12.0 + j 32.0 7.5 + j 22.0 5.0 + j 13.0 4.0 + j 7.0 3.8 + j 3.0 POUT = Saturated VCC = 28 V Normalized to 50 ohms TYPICAL COLLECTOR LOAD IMPEDANCE Z CL 3/5 MSC83301 TEST CIRCUIT RF Amplifier Power Output Test All dimensions are in inches. Ref.: Dwg. No. C125518 4/5 MSC83301 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0216 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5