P0102DA5AL3

P0102DA Datasheet 0.8 A 400 V high immunity sensitive SCR thyristor in TO-92 Features A G K K G A TO-92 • On-state rms current, IT(RMS) 0.8 A • 125 °C max. Tj • • Low 0.2 mA gate current Repetitive peak off-state voltage, VDRM/VRRM 400 V • ECOPACK2 compliant Applications • • • • • • Gate driver for large Thyristors Overvoltage crowbar protection Ground fault circuit interrupters Arc fault circuit interrupter Standby mode power supplies Residual current detector Description Thanks to highly sensitive triggering levels, the 0.8 A P0102DA SCR thyristor is suitable for all applications where available gate current is limited. This device offers a high blocking voltage of 400 V, ideal for applications like interrupters circuits. Product status link The P0102DA is available in through-hole TO-92 package. P0102DA Product summary IT(RMS) 0.8 A VDRM/VRRM 400 V IGT 0.2 mA Tjmax. 125 °C DS13119 - Rev 2 - May 2020 For further information contact your local STMicroelectronics sales office. www.st.com P0102DA Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol IT(RMS) IT(AV) ITSM I2t dl/dt VDRM / VRRM IGM PG(AV) Tstg Tj Parameters On-state RMS current (180° conduction angle) Value Unit 0.8 A 0.5 A TL = 55 °C Average on-state current (180° conduction angle) Non repetitive surge peak on-state current, tp = 8.3 ms Tj initial = 25 °C tp = 10 ms I2t value for fusing tp = 10 ms Tj = 25 °C 0.24 A2s F = 60 Hz Tj = 25 °C 50 A/µs Tj = 125 °C 400 V Tj = 125 °C 1 A Tj = 125 °C 0.1 W Storage junction temperature range -40 to +150 °C Operating junction temperature range -40 to +125 °C Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Repetitive peak off-state voltage tp = 20 µs Peak gate current Average gate power dissipation 8 Tj = 25 °C A 7 Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol IGT VGT Parameters VD = 12 V, RL = 33 Ω Value Unit Max. 200 µA Max. 0.8 V V VGD VD = VDRM, RL = 3.3 kΩ, RGK = 1 kΩ, Tj = 125 °C Min. 0.1 VRG IRG = 10 µA Min. 8 IH IT = 50 mA, RGK = 1 kΩ Max. 5 mA IL IG = 1.2 IGT, RGK = 1 kΩ Max. 6 mA VD = 67 % VDRM, RGK = 1 kΩ, Tj = 125 °C Min. 75 V/µs Value Unit dV/dt Table 3. Static electrical characteristics Symbol VT DS13119 - Rev 2 Test conditions Tj ITM = 1.6 A, tp = 380 µs 25 °C Max. 1.95 V VTO Threshold on-state voltage 125 °C Max. 0.95 V Rd Dynamic resistance 125 °C Max. 600 mΩ IDRM VD = VDRM 25 °C 1 µA IRRM VR = VRRM 125 °C 0.1 mA Max. page 2/9 P0102DA Characteristics Table 4. Thermal resistance Symbol DS13119 - Rev 2 Parameters Max. value Rth(j-l) Junction to lead (DC) 80 Rth(j-a) Junction to ambient (DC) 150 Unit °C/W page 3/9 P0102DA Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state RMS current (full cycle) IT(AV)(A) P(W) 1.1 1.0 0.9 Figure 2. Average and DC on-state current versus lead temperature 1.0 α = 180° 0.9 0.8 0.8 0.7 D.C. (TO-92) 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 360° 0.3 0.2 α = 180° (TO-92) 0.2 0.1 IT(AV)(A) α 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Figure 3. Average and DC on-state current versus ambient temperature Tlead (°C) 0.0 0 25 50 75 100 125 Figure 4. Relative variation of thermal impedance versus pulse duration IT(AV)(A) K=[Z th(j-a) /Rth(j-a) ] 1.00 1.2 1.1 1.0 0.9 0.8 TO-92 0.7 D.C. (TO-92) 0.10 0.6 0.5 0.4 0.3 α = 180° (TO-92) 0.2 0.1 Tamb (°C) 0.0 0 25 50 75 100 125 Figure 5. Relative variation of holding current versus gate-cathode resistance 20 t p (s) 0.01 IH[ RGK] / IH[ RGK = 1 kΩ] 1E-2 1E+0 1E-1 1E+1 5E+2 Figure 6. Relative variation of gate voltage and gate, holding and latching current versus junction temperature 6.0 IGT, V GT , I H, I L [Tj ] / I GT, V GT, I H, I L[Tj =25 ° C] Relative variations Typical values Tj = 25°C 18 1E+2 5.0 16 14 4.0 12 Typical values 10 8 2.0 6 4 DS13119 - Rev 2 IH and IL (RGK =1 KΩ) 1.0 2 0 1E-2 IGT 3.0 RGK( k Ω) 1E-1 VGT Tj (°C) 1E+0 1E+1 0.0 -40 -20 0 20 40 60 80 100 120 140 page 4/9 P0102DA Characteristics (curves) Figure 8. Relative variation of dV/dt immunity versus gatecathode capacitance Figure 7. Relative variation of static dV/dt immunity versus gate-cathode resistance 10.0 dV/dt[R GK ] / dV/dt[RGK = 1k Ω] 10 dV/dt[CGK] / dV/dt[RGK = 1kΩ, CGK = 0 F] VD= 0.67 xV DRM Tj = 125°C RGK= 1kΩ Tj = 125°C VD = 0.67 x VDRM 8 6 Typical values 1.0 4 Typical values 2 RGK( k Ω) 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 Figure 9. Surge peak on-state current versus number of cycles 8 CGK (nF) 0 1 2 3 4 5 6 7 Figure 10. Non-repetitive surge peak on-state current for sinusoidal pulse (tp< 10 ms) ITSM(A) 100.0 ITSM(A) Tj initial = 25°C 7 tp = 10ms 6 ITSM One cycle 10.0 5 Non repetitive Tj initial = 25°C 4 3 Repetitive Tamb = 36 °C 1.0 2 1 Number of cycles 0 1 1 0 t p (ms) 0.1 100 1000 0.01 1.00 0.10 10.00 Figure 11. On-state characteristics (maximum values) 1E+1 ITM(A) Tj max.: Vt0 = 0.95 V Rd = 600 m Ω 1E+0 Tj = max Maximum values Tj = 25 °C 1E-1 VTM(V) 1E-2 0.5 DS13119 - Rev 2 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 page 5/9 P0102DA Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 TO-92 package information • • Lead free plating + halogen-free molding resin Epoxy meets UL94, V0 Figure 12. TO-92 package outline c A a B C b D F E Table 5. TO-92 package mechanical data Dimensions Ref. Inches(1) Millimeters Min. A Typ. Max. Min. 1.35 B Typ. 0.0531 4.70 C Max. 0.1850 2.54 0.1000 D 4.40 0.1732 E 12.70 0.5000 F 3.70 0.1457 a 0.50 0.0197 b 1.27 c 0.0500 0.48 0.0189 1. Inches dimensions given for information DS13119 - Rev 2 page 6/9 P0102DA Ordering information 3 Ordering information Figure 13. Ordering information scheme P01 02 D A - xxxx Sensitive P01 = sensitive SCR, high immunity Gate sensitivity 02 = 200 µA Voltage D = 400 V Package A = TO-92 Packing mode 1AA3 = Bag 2AL3 = Ammopack 5AL3 = Tape and reel 13 inch Table 6. Ordering information Order code Marking Package Weight P0102DA 1AA3 P0102DA 2AL3 P0102DA 5AL3 DS13119 - Rev 2 P0102 DA TO-92 0.22 g Base qty. Delivery mode 2500 Bag 2000 AMMOPACK not in dry bag 2000 Tape and reel 13" page 7/9 P0102DA Revision history Table 7. Document revision history DS13119 - Rev 2 Date Revision Changes 14-Oct-2019 1 Initial release. 18-May-2020 2 Updated Section Cover image. page 8/9 P0102DA IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS13119 - Rev 2 page 9/9