P0102MN
Sensitive 0.8 A SCR thyristor
Datasheet - production data
A
Description
Thanks to highly sensitive triggering levels, the
0.8 A P0102MN SCR thyristor is suitable for all
applications where available gate current is
limited. This device offers a high blocking voltage
of 600 V, ideal for applications like interrupters
circuits.
G
K
A
G
A
The surface mount SOT-223 package allows
compact, SMD based designs for automated
manufacturing.
K
SOT-223
Table 1: Device summary
Symbol
Features
IT(RMS) 0.8 A
125 °C max Tj
Low 0.2 mA gate current
600 V VDRM/VRRM
ECOPACK®2 compliant component
Value
Unit
IT(RMS)
0.8
A
VDRM/VRRM
600
V
IGT
0.2
mA
Tj max.
125
°C
Applications
Proximity sensors
Gate driver for large thyristors
Overvoltage crowbar protection
Ground fault circuit interrupters
Arc fault circuit interrupter
Standby mode power supplies
Residual current detector
October 2017
DocID031113 Rev 1
This is information on a product in full production.
1/8
www.st.com
Characteristics
1
P0102MN
Characteristics
Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified
Symbol
IT(RMS)
Parameter
Value
RMS on-state current (180 ° conduction angle)
Tamb = 70 °C
0.8
A
IT(AV)
Average on-state current (180 ° conduction angle)
ITSM
Non repetitive surge peak on-state current
(Tj initial = 25 °C)
tp = 8.3 ms
8
tp = 10 ms
7
I2t value for fusing
tp = 10 ms
0.24
A2s
Tj = 125 °C
50
A/µs
Tj = 125 °C
600
V
Tj = 125 °C
1
A
Tj = 125 °C
0.1
W
Storage junction temperature range
-40 to +150
°C
Operating junction temperature
-40 to +125
°C
I2 t
dl/dt
VDRM/VRRM
IGM
PG(AV)
Tstg
Tj
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
f = 60 Hz
Repetitive peak off-state voltage
Peak gate current
tp = 20 µs
Average gate power dissipation
0.5
Unit
A
Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)
Symbol
IGT
VGT
Test conditions
VD = 12 V, RL = 140 Ω
Value
Unit
Max.
200
µA
Max.
0.8
V
Min.
0.1
V
VGD
VD = VDRM, RL = 3.3 kΩ, RGK = 1000 Ω
VRG
IRG = 10 µA
Min.
8
V
IH
IT = 50 mA, RGK = 1000 Ω
Max.
5
mA
IL
IG = 1 mA, RGK = 1000 Ω
Max.
6
mA
Min.
75
V/µs
Value
Unit
dV/dt
Tj = 125 °C
VD = 67 % VDRM, RGK = 1000 Ω
Tj = 125 °C
Table 4: Static characteristics
Symbol
Test conditions
VTM
ITM = 1.6 A, tp = 380 µs
Tj = 25 °C
Max.
1.95
VTO
Threshold voltage
Tj = 125 °C
Max.
0.95
RD
Dynamic resistance
Tj = 125 °C
Max.
600
IDRM/IRRM
Tj = 25 °C
VD = VDRM; VR = VRRM, RGK = 1000 Ω
Tj = 125 °C
Max.
10
100
V
mΩ
µA
Table 5: Thermal parameters
Symbol
Rth(j-t)
Rth(j-a)
Parameter
Value
Junction to tab (DC)
30
Junction to ambient (DC)
S(1)
Notes:
(1)S
2/8
Unit
= copper surface under tab.
DocID031113 Rev 1
= 5 cm²
60
°C/W
P0102MN
Characteristics
1.1
Characteristics (curves)
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Average and DC on-state current versus
case temperature
P(W)
IT(AV)(A)
1.0
1.1
0.9
α = 180°
D.C. (SOT-223)
1.0
0.8
0.9
0.7
0.8
0.6
0.7
0.5
0.6
α = 180° (SOT-223)
0.5
0.4
0.4
0.3
0.3
360°
0.2
0.2
0.1
IT(AV)(A)
0.1
α
0.0
Tlead (°C)
0.0
0.0
0.1
0.2
0.3
0.4
0.5
Figure 3: Average and DC on-state current versus
ambient temperature
IT(AV)(A)
25
50
75
100
125
Figure 4: Relative variation of thermal impedance
versus pulse duration
1.00
1.2
K=[Z th(j-a) /Rth(j-a) ]
Device mounted on
FR4 with recommended
pad la yout f or SO T-223
1.1
D.C. (SOT-223)
1.0
0
0.6
0.9
0.8
0.7
0.10
0.6
SOT-223
α = 180° (SOT-223)
0.5
0.4
0.3
0.2
0.1
t p(s)
Tamb(°C)
0.0
0
25
50
0.01
75
100
125
Figure 5: Relative variation of gate trigger current
and gate voltage versus junction temperature
(typical values)
20
1E-2
1E-1
1E+0
1E+1
1E+2
Figure 6: Relative variation of holding and latching
current versus junction temperature
(typical values)
IH[RGK] / IH[ RGK = 1 kΩ]
T j = 25°C
18
16
14
12
Typical values
10
8
6
4
2
0
1E-2
RGK(k Ω)
1E-1
1E+0
5E+2
1E+1
DocID031113 Rev 1
3/8
Characteristics
P0102MN
Figure 8: Relative variation of static dV/dt
immunity versus junction temperature
(typical values)
Figure 7: Relative variation of static dV/dt
immunity versus gate-cathode resistance
(typical values)
dV/dt[R GK] / dV/dt[RGK = 1kΩ]
10.0
dV/dt[CGK] / dV/dt[RGK = 1kΩ, CGK = 0 F]
10
VD
VD = 0.67 xV DRM
Tj = 125°C
RGK = 1kΩ
T j = 125°C
= 0.67 x V DRM
8
6
Typical values
1.0
4
Typical values
2
RGK(k Ω)
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
2.0
Figure 9: Surge peak on-state current versus
number of cycles
8
CGK (nF)
0
1
2
3
4
5
6
7
Figure 10: Non-repetitive surge peak on-state
current for sinusoidal pulse (tp < 10 ms)
ITSM(A)
ITSM(A)
100.0
T j initial = 25°C
7
tp = 10ms
6
ITSM
One cycle
10.0
5
Non repetitive
T j initial = 25°C
4
3
Repetitive
T amb = 36 °C
1.0
2
1
t p (ms)
Number of cycles
0
1
10
0.1
100
0.01
1000
Figure 11: On-state characteristics
(maximum values)
10.00
1.00
0.10
Figure 12: Thermal resistance junction to ambient
versus copper surface tab
Rth(j-a) (°C/W)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
Epoxy printed circuit board
FR4, copper thickness = 35 µm
S(cm²)
0.0
4/8
DocID031113 Rev 1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
P0102MN
2
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
2.1
Lead-free package
Halogen free molding resin
Epoxy meets UL94, V0
SOT-223 package information
Figure 13: SOT-223 package outline
DocID031113 Rev 1
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Package information
P0102MN
Table 6: SOT-223 package mechanical data
Inches(1)
Millimeters
Dim.
Min.
Typ.
A
Max.
Min.
Typ.
1.8
A1
0.02
B
0.6
B1
Max.
0.0709
0.1
0.0008
0.0039
0.7
0.85
0.0236
0.0276
0.0335
2.9
3
3.15
0.1142
0.1181
0.1240
c
0.24
0.26
0.35
0.0094
0.0102
0.0138
D(2)
6.3
6.5
6.7
0.2480
0.2559
0.2638
e
2.3
0.0906
e1
4.6
0.1811
E
3.3
3.5
3.7
0.1299
0.1378
0.1457
H
6.7
7.0
7.3
0.2638
0.2756
0.2874
V
10º
10°
Notes:
(1)Inches
(2)Does
dimensions given only for reference
not include mold flash or protusions. Mold flash or protusions must not exceed 0.15 mm (0.006 inches)
Figure 14: SOT-223 recommended footprint (dimensions are in mm)
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DocID031113 Rev 1
P0102MN
3
Ordering information
Ordering information
Figure 15: Ordering information scheme
P01 02 M
N
- xxxx
Series
P = sensitive SCR, high immunity
Gate sensitivity
02 = 200 µA
Voltage
M = 600 V
Package
N = SOT-223
Delivery mode (Packing)
5AA4 = Tape and reel 7‘’
Table 7: Ordering information
4
Order code
Marking
Package
Weight
Base qty.
Delivery mode
P0102MN 5AA4
P2M
SOT-223
0.12 g
1000
Tape and reel 7"
Revision history
Table 8: Document revision history
Date
Revision
06-Oct-2017
1
Changes
Initial release.
DocID031113 Rev 1
7/8
P0102MN
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