P0109DA5AL3

P0102MN Sensitive 0.8 A SCR thyristor Datasheet - production data A Description Thanks to highly sensitive triggering levels, the 0.8 A P0102MN SCR thyristor is suitable for all applications where available gate current is limited. This device offers a high blocking voltage of 600 V, ideal for applications like interrupters circuits. G K A G A The surface mount SOT-223 package allows compact, SMD based designs for automated manufacturing. K SOT-223 Table 1: Device summary Symbol Features      IT(RMS) 0.8 A 125 °C max Tj Low 0.2 mA gate current 600 V VDRM/VRRM ECOPACK®2 compliant component Value Unit IT(RMS) 0.8 A VDRM/VRRM 600 V IGT 0.2 mA Tj max. 125 °C Applications        Proximity sensors Gate driver for large thyristors Overvoltage crowbar protection Ground fault circuit interrupters Arc fault circuit interrupter Standby mode power supplies Residual current detector October 2017 DocID031113 Rev 1 This is information on a product in full production. 1/8 www.st.com Characteristics 1 P0102MN Characteristics Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified Symbol IT(RMS) Parameter Value RMS on-state current (180 ° conduction angle) Tamb = 70 °C 0.8 A IT(AV) Average on-state current (180 ° conduction angle) ITSM Non repetitive surge peak on-state current (Tj initial = 25 °C) tp = 8.3 ms 8 tp = 10 ms 7 I2t value for fusing tp = 10 ms 0.24 A2s Tj = 125 °C 50 A/µs Tj = 125 °C 600 V Tj = 125 °C 1 A Tj = 125 °C 0.1 W Storage junction temperature range -40 to +150 °C Operating junction temperature -40 to +125 °C I2 t dl/dt VDRM/VRRM IGM PG(AV) Tstg Tj Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns f = 60 Hz Repetitive peak off-state voltage Peak gate current tp = 20 µs Average gate power dissipation 0.5 Unit A Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT VGT Test conditions VD = 12 V, RL = 140 Ω Value Unit Max. 200 µA Max. 0.8 V Min. 0.1 V VGD VD = VDRM, RL = 3.3 kΩ, RGK = 1000 Ω VRG IRG = 10 µA Min. 8 V IH IT = 50 mA, RGK = 1000 Ω Max. 5 mA IL IG = 1 mA, RGK = 1000 Ω Max. 6 mA Min. 75 V/µs Value Unit dV/dt Tj = 125 °C VD = 67 % VDRM, RGK = 1000 Ω Tj = 125 °C Table 4: Static characteristics Symbol Test conditions VTM ITM = 1.6 A, tp = 380 µs Tj = 25 °C Max. 1.95 VTO Threshold voltage Tj = 125 °C Max. 0.95 RD Dynamic resistance Tj = 125 °C Max. 600 IDRM/IRRM Tj = 25 °C VD = VDRM; VR = VRRM, RGK = 1000 Ω Tj = 125 °C Max. 10 100 V mΩ µA Table 5: Thermal parameters Symbol Rth(j-t) Rth(j-a) Parameter Value Junction to tab (DC) 30 Junction to ambient (DC) S(1) Notes: (1)S 2/8 Unit = copper surface under tab. DocID031113 Rev 1 = 5 cm² 60 °C/W P0102MN Characteristics 1.1 Characteristics (curves) Figure 1: Maximum average power dissipation versus average on-state current Figure 2: Average and DC on-state current versus case temperature P(W) IT(AV)(A) 1.0 1.1 0.9 α = 180° D.C. (SOT-223) 1.0 0.8 0.9 0.7 0.8 0.6 0.7 0.5 0.6 α = 180° (SOT-223) 0.5 0.4 0.4 0.3 0.3 360° 0.2 0.2 0.1 IT(AV)(A) 0.1 α 0.0 Tlead (°C) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 Figure 3: Average and DC on-state current versus ambient temperature IT(AV)(A) 25 50 75 100 125 Figure 4: Relative variation of thermal impedance versus pulse duration 1.00 1.2 K=[Z th(j-a) /Rth(j-a) ] Device mounted on FR4 with recommended pad la yout f or SO T-223 1.1 D.C. (SOT-223) 1.0 0 0.6 0.9 0.8 0.7 0.10 0.6 SOT-223 α = 180° (SOT-223) 0.5 0.4 0.3 0.2 0.1 t p(s) Tamb(°C) 0.0 0 25 50 0.01 75 100 125 Figure 5: Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) 20 1E-2 1E-1 1E+0 1E+1 1E+2 Figure 6: Relative variation of holding and latching current versus junction temperature (typical values) IH[RGK] / IH[ RGK = 1 kΩ] T j = 25°C 18 16 14 12 Typical values 10 8 6 4 2 0 1E-2 RGK(k Ω) 1E-1 1E+0 5E+2 1E+1 DocID031113 Rev 1 3/8 Characteristics P0102MN Figure 8: Relative variation of static dV/dt immunity versus junction temperature (typical values) Figure 7: Relative variation of static dV/dt immunity versus gate-cathode resistance (typical values) dV/dt[R GK] / dV/dt[RGK = 1kΩ] 10.0 dV/dt[CGK] / dV/dt[RGK = 1kΩ, CGK = 0 F] 10 VD VD = 0.67 xV DRM Tj = 125°C RGK = 1kΩ T j = 125°C = 0.67 x V DRM 8 6 Typical values 1.0 4 Typical values 2 RGK(k Ω) 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 Figure 9: Surge peak on-state current versus number of cycles 8 CGK (nF) 0 1 2 3 4 5 6 7 Figure 10: Non-repetitive surge peak on-state current for sinusoidal pulse (tp < 10 ms) ITSM(A) ITSM(A) 100.0 T j initial = 25°C 7 tp = 10ms 6 ITSM One cycle 10.0 5 Non repetitive T j initial = 25°C 4 3 Repetitive T amb = 36 °C 1.0 2 1 t p (ms) Number of cycles 0 1 10 0.1 100 0.01 1000 Figure 11: On-state characteristics (maximum values) 10.00 1.00 0.10 Figure 12: Thermal resistance junction to ambient versus copper surface tab Rth(j-a) (°C/W) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 Epoxy printed circuit board FR4, copper thickness = 35 µm S(cm²) 0.0 4/8 DocID031113 Rev 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 P0102MN 2 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.    2.1 Lead-free package Halogen free molding resin Epoxy meets UL94, V0 SOT-223 package information Figure 13: SOT-223 package outline DocID031113 Rev 1 5/8 Package information P0102MN Table 6: SOT-223 package mechanical data Inches(1) Millimeters Dim. Min. Typ. A Max. Min. Typ. 1.8 A1 0.02 B 0.6 B1 Max. 0.0709 0.1 0.0008 0.0039 0.7 0.85 0.0236 0.0276 0.0335 2.9 3 3.15 0.1142 0.1181 0.1240 c 0.24 0.26 0.35 0.0094 0.0102 0.0138 D(2) 6.3 6.5 6.7 0.2480 0.2559 0.2638 e 2.3 0.0906 e1 4.6 0.1811 E 3.3 3.5 3.7 0.1299 0.1378 0.1457 H 6.7 7.0 7.3 0.2638 0.2756 0.2874 V 10º 10° Notes: (1)Inches (2)Does dimensions given only for reference not include mold flash or protusions. Mold flash or protusions must not exceed 0.15 mm (0.006 inches) Figure 14: SOT-223 recommended footprint (dimensions are in mm) 6/8 DocID031113 Rev 1 P0102MN 3 Ordering information Ordering information Figure 15: Ordering information scheme P01 02 M N - xxxx Series P = sensitive SCR, high immunity Gate sensitivity 02 = 200 µA Voltage M = 600 V Package N = SOT-223 Delivery mode (Packing) 5AA4 = Tape and reel 7‘’ Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode P0102MN 5AA4 P2M SOT-223 0.12 g 1000 Tape and reel 7" Revision history Table 8: Document revision history Date Revision 06-Oct-2017 1 Changes Initial release. DocID031113 Rev 1 7/8 P0102MN IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 8/8 DocID031113 Rev 1