P0118MN2AL3

® P01 Series 0.8A SCRs SENSITIVE MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 0.8 400 and 600 5 to 200 Unit A V µA G A K DESCRIPTION Thanks to highly sensitive triggering levels, the P01 SCR series is suitable for all applications where available gate current is limited, such as ground fault circuit interruptors, pilot circuits in solid state relays, stand-by mode power supplies, smoke and alarm detectors. Available in through-hole or surface mount packages, the voltage capability of this series has been upgrated since its introduction, to reach 600 V. TO-92 (P01xxA) SOT-223 (P01xxN) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Parameter TO-92 SOT-223 TO-92 SOT-223 tp = 8.3 ms tp = 10 ms tp = 10ms F = 60 Hz tp = 20 µs Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C Tl = 55°C 0.8 Tamb = 70°C Tl = 55°C 0.5 Tamb = 70°C 8 7 0.24 50 1 0.1 - 40 to + 150 - 40 to + 125 A A2S A/µs A W °C A A Value Unit IT(AV) ITSM I ²t dI/dt IGM PG(AV) Tstg Tj September 2000 - Ed: 3 1/6 P01 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT VD = 12 V VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ IRG = 10 µA IT = 50 mA IG = 1 mA ITM = 1.6 A RGK = 1 kΩ RGK = 1 kΩ RGK = 1 kΩ Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C RGK = 1 kΩ RGK = 1 kΩ RGK = 1 kΩ Tj = 25°C Tj = 125°C MAX. tp = 380 µs Tj = 125°C RL = 140 Ω Test Conditions 02 MIN. MAX. MAX. MIN. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. 75 200 P01xx Unit 11 4 25 0.8 0.1 8 5 6 80 1.95 0.95 600 1 10 100 75 18 0.5 5 µA V V V mA mA V/µs V V mΩ µA µA µA VD = 67 % VDRM Threshold voltage Dynamic resistance VDRM = VRRM = 400 V VDRM = VRRM = 600 V VDRM = VRRM THERMAL RESISTANCES Symbol Rth(j-i) Rth(j-t) Rth(j-a) Junction to case (DC) Junction to tab (DC) Junction to ambient S=5 S = Copper surface under tab Parameter TO-92 SOT-223 TO-92 cm² SOT-223 Value 80 30 150 60 Unit °C/W °C/W PRODUCT SELECTOR Part Number 400 V P0102DA P0102DN P0102MA P0102MN P0111DA P0111DN P0111MA P0111MN P0118DA P0118DN P0118MA P0118MN X X X X X X X X X X X X Voltage 600 V 200 µA 200 µA 200 µA 200 µA 25 µA 25 µA 25 µA 25 µA 5 µA 5 µA 5 µA 5 µA TO-92 SOT-223 TO-92 SOT-223 TO-92 SOT-223 TO-92 SOT-223 TO-92 SOT-223 TO-92 SOT-223 Sensitivity Package 2/6 P01 Series ORDERING INFORMATION P 01 02 SENSITIVE SCR SERIES CURRENT: 0.8A DN VOLTAGE: D: 400V M: 600V Blank 1AA3 PACKING MODE: 1AA3: TO-92 bulk (preferred) 2AL3: TO-92 ammopack 5AA4: SOT-223 Tape & Reel PACKAGE: A: TO-92 N: SOT-223 SENSITIVITY: 02: 200µA 11: 25µA 18: 5µA OTHER INFORMATION Part Number P01xxyA 1AA3 P01xxyA 2AL3 P0102yN 5AA4 P0111yN 5AA4 P0118yN 5AA4 Marking P01xxyA P01xxyA P2y P1y P8y Weight 0.2 g 0.2 g 0.12 g 0.12 g 0.12 g Base Quantity 2500 2000 1000 1000 1000 Packing mode Bulk Ammopack Tape & reel Tape & reel Tape & reel Note: xx = sensitivity, y = voltage Fig. 1: Maximum average power dissipation versus average on-state current. P(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 Fig. 2-1: Average and D.C. on-state current versus lead temperature. IT(av)(A) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Tlead or Ttab (°C) 0 25 50 75 100 125 0.1 0.2 0.3 0.4 0.5 0.6 Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout for SOT-223). IT(av)(A) Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. K = [Zth(j-a)/Rth(j-a)] 1.00 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.10 Tamb(°C) 0 25 50 75 100 125 0.01 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 3/6 P01 Series Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C Fig. 5:Relative variation of holding current versus gate-cathode resistance (typical values). IH[Rgk]/IH[Rgk=1kΩ] 6 5 4 3 2 1 Tj(°C) 0 -40 Rgk(kΩ) -20 0 20 40 60 80 100 120 140 Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). dV/dt[Rgk] / dV/dt[Rgk=1kΩ] Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). dV/dt[Cgk] / dV/dt[Rgk=1kΩ] 10.0 10 8 6 1.0 4 2 Rgk(kΩ) Cgk(nF) 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 1 2 3 4 5 6 7 Fig. 8: Surge peak on-state current versus number of cycles. Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. ITSM(A), I2t(A2s) ITSM(A) 8 7 tp=10ms 100.0 6 5 4 3 2 1 0 1 10 Repetitive Tamb=25°C Non repetitive Tj initial=25°C Onecycle 10.0 1.0 Numberofcycles 100 1000 0.1 0.01 0.10 tp(ms) 1.00 10.00 4/6 P01 Series Fig. 10: On-state characteristics (maximum values). Fig. 11: SOT-223 Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm). Rth(j-a) (°C/W) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 ITM(A) 1E+1 Ω 1E+0 1E-1 VTM(V) S (cm2) 1E-2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 PACKAGE MECHANICAL DATA TO-92 (Plastic) DIMENSIONS REF. A a B C Millimeters Min. Typ. 1.35 4.70 2.54 4.40 12.70 3.70 0.50 0.173 0.500 Max. Min. Inches Typ. 0.053 0.185 0.100 Max. F D E A B C D E F a 0.146 0.019 5/6 P01 Series PACKAGE MECHANICAL DATA SOT-223 (Plastic) DIMENSIONS A A1 B e1 D B1 V c REF. Millimeters Min. Typ. Max. Min. Inches Typ. Max. HE e A A1 B B1 c D e e1 E H V 0.02 0.60 2.90 0.24 6.30 3.30 6.70 0.70 3.00 0.26 6.50 2.3 4.6 3.50 7.00 1.80 0.071 0.1 0.0008 0.004 0.85 0.024 0.027 0.034 3.15 0.114 0.118 0.124 0.35 0.009 0.010 0.014 6.70 0.248 0.256 0.264 0.090 0.181 3.70 0.130 0.138 0.146 7.30 0.264 0.276 0.287 10° max FOOTPRINT DIMENSIONS (in millimeters) SOT-223 (Plastic) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom http://www.st.com 6/6