P0130AA1EA3

P0130AA ® 0.8A SCRs SENSITIVE MAIN FEATURES: A Symbol Value Unit IT(RMS) 0.8 A VDRM/VRRM 100 V IGT 1 µA G K DESCRIPTION The P0130AA is a gate sensitive SCR, packaged in TO-92, used in conjunction of a TN22 A.S.D™ and of a resistor in electronic starter for fluorescent tubelamps. TO-92 ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter RMS on-state current (180° conduction angle) IT(AV) Average on-state current (180° conduction angle) ITSM Non repetitive surge peak on-state current Value Unit Tl = 55°C 0.8 A Tl = 55°C 0.5 A tp = 8.3 ms 8 Tj = 25°C tp = 10 ms I ²t A 7 I²t Value for fusing tp = 10ms Tj = 25°C 0.24 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 1 A Tj = 125°C 0.1 W - 40 to + 150 - 40 to + 125 °C PG(AV) Tstg Tj Average gate power dissipation Storage junction temperature range Operating junction temperature range May 2002 - Ed: 2 1/5 P0130AA ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol P0130AA Test Conditions MIN. 0.1 MAX. 1 MAX. 0.8 V MIN. 0.1 V MIN. 8 V MAX. 5 mA MAX. 6 mA Tj = 125°C MIN. 25 V/µs Tj = 25°C MAX. 1.95 V IGT RL = 140 Ω VD = 12 V VGT VGD VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ VRG IRG = 10 µA IH IT = 50 mA IL IG = 1 mA Unit Tj = 125°C RGK = 1 kΩ RGK = 1 kΩ µA dV/dt VD = 67 % VDRM VTM ITM = 1.6 A Vt0 Threshold voltage Tj = 125°C MAX. 0.95 V Rd Dynamic resistance Tj = 125°C MAX. 600 mΩ VDRM = VRRM Tj = 25°C MAX. 1 µA Tj = 125°C MAX. 100 IDRM RGK = 1 kΩ tp = 380 µs RGK = 1 kΩ IRRM THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-i) Junction to case (DC) 80 °C/W Rth(j-a) Junction to ambient (DC) 150 °C/W PRODUCT SELECTOR Part Number P0130AA 2/5 Voltage Sensitivity 100V 1 µA Package TO-92 P0130AA ORDERING INFORMATION P 01 30 A A Blank 1EA3 SENSITIVE SCR SERIES VOLTAGE: A: 100V CURRENT: 0.8A PACKING MODE: 1EA3: TO-92 bulk 2AL3: TO-92 ammopack PACKAGE: A: TO-92 SENSITIVITY: 30: 1µA OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode P0130AA 1EA3 P0130AA 0.2 g 2500 Bulk P0130AA 2AL3 P0130AA 0.2 g 2000 Ammopack Note: xx = sensitivity, y = voltage Fig. 1: Maximum average power dissipation versus average on-state current. P(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Fig. 2-2: Average and D.C. on-state current versus ambient temperature. 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Fig. 2-1: Average and D.C. on-state current versus lead temperature. 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 IT(av)(A) Tlead or Ttab (°C) 0 25 75 50 100 125 Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. K = [Zth(j-a)/Rth(j-a)] IT(av)(A) 1.00 0.10 Tamb(°C) 0 25 50 75 tp(s) 100 125 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 3/5 P0130AA Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 5:Relative variation of holding current versus gate-cathode resistance (typical values). IH[Rgk]/IH[Rgk=1kΩ] IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C 6 5 4 3 2 1 Tj(°C) 0 -40 -20 0 20 Rgk(kΩ) 40 60 80 100 120 140 Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). dV/dt[Cgk] / dV/dt[Rgk=1kΩ] dV/dt[Rgk] / dV/dt[Rgk=1kΩ] 10 10.0 8 6 1.0 4 2 Rgk(kΩ) 0.1 0 0.2 0.4 0.6 0.8 1.0 Cgk(nF) 1.2 1.4 1.6 1.8 2.0 Fig. 8: Surge peak on-state current versus number of cycles. 0 0 1 3 2 5 4 6 7 Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. ITSM(A), I2t(A2s) ITSM(A) 100.0 8 7 tp=10ms 6 Onecycle 5 10.0 Non repetitive Tj initial=25°C 4 Repetitive Tamb=25°C 3 1.0 2 1 0 tp(ms) Numberofcycles 1 4/5 10 100 1000 0.1 0.01 0.10 1.00 10.00 P0130AA Fig. 10: On-state characteristics (maximum values). ITM(A) 1E+1 Ω 1E+0 1E-1 VTM(V) 1E-2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 PACKAGE MECHANICAL DATA TO-92 (Plastic) DIMENSIONS REF. A Min. a B C F D E Millimeters A B C D E F a Typ. Inches Max. Min. 1.35 Typ. Max. 0.053 4.70 0.185 2.54 0.100 4.40 12.70 0.173 0.500 3.70 0.50 0.146 0.019 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States http://www.st.com 5/5