P60NS04ZB

STP60NS04ZB N-channel clamped - 10mΩ - 60A - TO-220 Fully protected Mesh Overlay™ Power MOSFET General features Type STP60NS04ZB ■ ■ ■ VDSS Clamped RDS(on) < 0.015Ω ID 60A 100% avalanche tested Low capacitance and gate charge 175 °C maximum junction temperature TO-220 1 2 3 Description This fully clamped Power MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. Internal schematic diagram Applications ■ Switching application Order codes Part number STP60NS04ZB Marking P60NS04ZB Package TO-220 Packaging Tube October 2006 Rev 2 1/13 www.st.com 13 Contents STP60NS04ZB Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STP60NS04ZB Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDG IGS IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain gate current (continuous) Gate source current (continuous) Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Value Clamped Clamped 60 42 ±50 ±50 240 150 1 6 4 4 Unit V V A A mA mA A W W/°C KV KV KV Ptot VESD(G-S) VESD(G-D) VESD(D-S) Tstg Tj Gate-source ESD (HBM - C = 100pF, R=1.5 kΩ) Gate-drain ESD (HBM - C = 100pF, R=1.5 kΩ) Drain-source ESD (HBM - C = 100pF, R=1.5 kΩ) Storage temperature -65 to 175 Max. operating junction temperature °C 1. Pulse width limited by safe operating area. Table 2. Rthj-case Rthj-amb TJ Thermal data Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 1 62.5 300 °C/W °C/W °C Symbol IAR EAS Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 30 V) Max Value 60 400 Unit A mJ 3/13 Electrical characteristics STP60NS04ZB 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS =0 -40 < Tj < 175°C VDS = 16V; TJ =150°C VDS = 16V; TJ =175°C VGS = ±10V;Tj =175°C VGS = ±16V;Tj =175°C IGS = 100µA VDS = VGS, ID = 1mA -40 < TJ < 150°C VGS = 10V, ID = 30A VGS = 16V, ID = 30A 18 1.7 3 11 10 4.2 15 14 Min. 33 50 100 50 150 Typ. Max. Unit V µA µA µA µA V V mΩ mΩ Table 4. Symbol gfs (1) Ciss Coss Crss tr(Voff) tf tc Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Fall time Cross-over time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS= 15V, ID=30A Min. 20 Typ. 40 1700 800 190 60 45 100 48 13 16 2100 1000 240 75 60 130 42 Max. Unit S pF pF pF ns ns ns nC nC nC VDS = 25V, f = 1MHz, VGS = 0 Vclamp = 30V, ID = 60A RG = 4.7Ω VGS = 10V (see Figure 14) VDD = 18V, ID = 60A, VGS = 10V, RG = 4.7Ω (see Figure 15) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/13 STP60NS04ZB Electrical characteristics Table 5. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 60A, VGS = 0 50 62 2.6 Test conditions Min. Typ. Max. 60 240 1.5 Unit A A V ns nC A Reverse recovery time ISD = 60A, di/dt = 100A/µs, Reverse recovery charge VDD = 15V, Tj = 150°C Reverse recovery current (see Figure 16) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/13 Electrical characteristics STP60NS04ZB 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STP60NS04ZB Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Zero gate voltage drain current vs temperature 7/13 Electrical characteristics Figure 13. Normalized BVDSS vs temperature STP60NS04ZB 8/13 STP60NS04ZB Test circuit 3 Test circuit Figure 15. Gate charge test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/13 Package mechanical data STP60NS04ZB 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STP60NS04ZB Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 11/13 Revision history STP60NS04ZB 5 Revision history Table 6. Date 21-Jun-2004 04-Oct-2006 Revision history Revision 1 2 Complete document New template, no content change Changes 12/13 STP60NS04ZB Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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