PD20015C

PD20015C RF power transistor, LdmoST family Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ BeO free package ■ ESD protection ■ In compliance with the 2002/95/EC european directive M243 Epoxy sealed Description The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. Figure 1. Pin connection 1 3 PD20015C’s superior linearity performance makes it an ideal solution for mobile application. 2 1. Drain 3. Source 2. Gate April 2009 Doc ID 14136 Rev 2 1/9 www.st.com 9 Contents PD20015C Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2/9 Doc ID 14136 Rev 2 PD20015C Electrical data 1 Electrical data 1.1 Maximum ratings TCASE = 25 °C Table 2. Absolute maximum ratings Symbol Value Unit V(BR)DSS Drain-source voltage 40 V VGS Gate-source voltage - 0.5 to 15 V Drain current 7 A Power dissipation (@ TC = 70 °C) 93 W Max. operating junction temperature 200 °C -65 to +150 °C Value Unit 1.4 °C/W ID PDISS TJ TSTG 1.2 Parameter Storage temperature Thermal data Table 3. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Doc ID 14136 Rev 2 3/9 Electrical characteristics 2 PD20015C Electrical characteristics TCASE = +25 °C 2.1 Static Table 4. Static Symbol 2.2 Test conditions Min. Unit VGS = 0 V VDS = 25 V - 1 μA IGSS VGS = 5 V VDS = 0 V - 1 μA VGS(Q) VDS = 10 V ID = 350 mA - 4.2 VDS(ON) VGS = 10 V ID = 1 A - 270 CISS VGS = 0 V VDS = 12.5 V f = 1 MHz - 49 pF COSS VGS = 0 V VDS = 12.5 V f = 1 MHz - 35 pF CRSS VGS = 0 V VDS = 12.5 V f = 1 MHz - 1.0 pF Min. Typ. Max. Unit 23 - W V 310 mV Dynamic Symbol P3dB Dynamic Test conditions VDD = 13.6 V, IDQ = 350 mA f = 2 GHz GP VDD = 13.6 V, IDQ = 350 mA, POUT = 15 W, f = 2 GHz 10 11 - dB hD VDD = 13.6 V, IDQ = 350 mA, POUT = P3dB, f = 2 GHz 45 53 - % - VSWR Load VDD = 15.5 V, IDQ = 350 mA, POUT = 20 W, f = 2 GHz mismatch All phase angles 20:1 ESD protection characteristics Table 6. 4/9 Max. IDSS Table 5. 2.3 Typ. ESD protection characteristics Test conditions Class Human body model 2 Machine model M3 Doc ID 14136 Rev 2 PD20015C Typical performance 3 Typical performance Figure 2. Capacitances vs drain voltage Figure 3. 120 p 6 Crss Coss Ciss Tamb = - 40 °C 100 5 80 4 Capacitance (pF) DC output characteristics ID[A] Freq = 1 MHz 60 3 2 40 1 20 0 0 0 0 10 20 30 40 2 Vgs = 4.0V DC output characteristics Figure 5. 8 10 12 Vgs = 4.5V Vgs = 5.0V Vgs = 5.5V Vgs = 6.0V DC output characteristic 6 6 Tamb = + 60 °C Tamb = + 20 °C 5 5 4 4 ID[A] ID[A] 6 VDS[V] Vds (V) Figure 4. 4 50 3 2 3 2 1 1 0 0 2 4 6 8 10 12 VDS[V] Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 5.5V Vgs = 6.0V 0 0 2 4 6 8 10 12 VDS[V] Vgs = 4.0V Doc ID 14136 Rev 2 Vgs = 4.5V Vgs = 5.0V Vgs = 5.5V Vgs = 6.0V 5/9 Typical performance 12 90 11 80 10 70 9 60 8 50 7 40 Freq = 2 GHz Vdd = 13.6V Idq = 350mA 6 5 30 20 4 10 3 0 0 5 Gain 10 15 20 25 30 Pout (W ) Eff 12 90 11 80 10 70 9 60 8 50 7 40 Freq = 2 GHz Vdd = 12V Idq = 350mA 6 5 30 20 4 10 3 0 0 Gain 6/9 5 Eff 10 Pout (W) Doc ID 14136 Rev 2 15 20 25 Nd (%) Gain and efficiency vs Pout Gain (db) Figure 7. Nd (%) Gain and efficiency vs Pout Gain (db) Figure 6. PD20015C PD20015C 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 7. M243 (0.230 x 0.360 2L N/HERM W/FLG) mechanical data Dim. mm. Min. Typ. Inch Max. Min. Typ. Max. A 5.21 5.72 0.205 0.225 B 5.46 6.48 0.215 0.255 C 5.59 6.10 0.220 D 14.27 0.240 0.562 E 20.07 20.57 0.790 0.810 F 8.89 9.40 0.350 0.370 G 0.10 0.15 0.004 0.006 H 3.18 4.45 0.125 0.175 I 1.83 2.24 0.072 0.088 J 1.27 1.78 0.050 0.070 Figure 8. Package dimensions Controlling dimension: Inches Doc ID 14136 Rev 2 1022142E 7/9 Revision history 5 PD20015C Revision history Table 8. 8/9 Document revision history Date Revision Changes 16-Nov-2007 1 Initial release. 14-Apr-2009 2 Updated Table 4 on page 4 Doc ID 14136 Rev 2 PD20015C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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