PD54003-PD54003S

PD54003 - PD54003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD5400 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54003 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD54003’s superior linearity performance makes it an ideal solution for portable radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING XPD54003 PD54003 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD54003S XPD54003S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 OC) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature 0 Value 25 ±20 4 52.8 165 -65 to 165 Unit V V A W 0C 0C THERMAL DATA R th(j-c) May 2000 Junction-Case Thermal Resistance 1.8 0 C/W 1/10 PD54003 - PD54003S ELECTRICAL SPECIFICATION (TCASE = 25 0C) STATIC Symbol IDSS IGSS V GS(Q) VDS(ON) gFS C ISS COSS C RSS VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Parameter V DS = 25 V VDS = 0 V ID = 50 mA ID = 1 A ID = 1 A VDS = 7.5 V VDS = 7.5 V VDS = 7.5 V f = 1 MHz f = 1 MHz f = 1 MHz 1.5 59 43 4.0 2.0 Min. Typ. Max. 1 1 5.0 1.3 Unit µA µA V V mho pF pF pF DYNAMIC Symbol POUT GPS ηD LOAD Mismatch f = 500 MHz f = 500 MHz f = 500 MHz Parameter VDD = 7.5 V VDD = 7.5 V VDD = 7.5 V IDQ = 50 mA POUT = 3 W POUT = 3 W POUT = 3 W IDQ = 50 mA IDQ = 50 mA IDQ = 50 mA 20:1 Min. 3 12 55 Typ. Max. Unit W dB % VSWR f = 500 MHz VDD = 9.5 V ALL PHASE ANGLES PIN CONNECTION SOURCE D ZDL GATE DRAIN G Zin Typical Input Impedance Typical Drain Load Impedance SC15200 SC13140 S PD54003 Frequency MHz 520 500 480 Zin IMPEDANCE DATA PD54003S Ω Zdl Ω Frequency MHz 520 500 480 Zin Ω Zdl Ω 1.993 - j1.098 1.553 - j1.251 2.245 - j0.077 2.564 + j0.656 2.661 + j0.139 3.436 + j1.013 1.534 - j2.104 1.209 - j2.451 1.400 - j3.986 2.524 + j2.369 3.192 + j3.147 2.805 + j2.724 2/10 PD54003 - PD54003S TYPICAL PERFORMANCE Capacitance vs. Drain Voltage 1000 f = 1MHz Drain Current vs. Gate Voltage 8 7 Id, DRAIN CURRENT(A) Vds=10V C, CAPACITANCE (pF) 6 5 4 3 2 1 100 Ciss Coss 10 Crss 1 0 5 10 15 VDD, DRAIN VOLTAGE (V) 0 1 2 3 4 5 6 7 8 9 VGS, GATE-SOURCE VOLTAGE (V) Gate-Source Voltage vs. Case Temperature VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 1.06 1.04 1.02 1 ID =1.5A 0.98 0.96 Vds=10V ID= 2A ID =1 A 0.94 0.92 -25 ID =0.5A ID = 0.25A 0 25 50 75 100 Tc, CASE TEMPERATURE (°C) 3/10 PD54003 - PD54003S TYPICAL PERFORMANCE Output Power vs. Input Power PD54003 Power Gain vs. Output Power 16 480MHz 5 Pout, OUTPUT POWER (W) 4 480MHz 14 Pg, POWER GAIN (dB) 500MHz 520MHz 3 500MHz 12 520MHz 2 Vdd=7.5V Idq=50 mA 10 Vdd=7.5V Idq=50mA 1 8 0 0 0.1 0.2 Pin, INPUT POWER (W) 6 0.3 0.4 0 1 2 3 4 Pout, OUTPUT POWER (W) Drain Efficiency vs. Output Power 80 70 Nd, DRAIN EFFICIENCY (%) 520MHz 480MHz Return Loss vs. Output Power 0 Rtl, RETURN LOSS(dB) 60 50 40 30 20 10 0 1 2 3 4 Pout, OUTPUT POWER (W) Vdd=7.5V Idq=50mA 500MHz -10 480M Hz -20 -30 Vdd=7.5 V Idq=50mA 520MHz 500MHz -40 0 1 2 3 4 Pout, OUTPUT POWER (W) Output Power vs. Bias Current Drain Efficiency vs. Bias Current 70 3.8 3.7 Pout, OUTPUT POWER (W) 500MHz 480MHz 60 Nd, DRAIN EFFICIENCY (%) 500MHz 520MHz 3.6 3.5 3.4 3.3 3.2 3.1 3 2.9 0 100 200 300 400 500 600 700 800 IDQ, BIAS CURRENT (mA) Pin=23.3dBm Vdd=7.5V 480MHz 50 40 30 20 10 0 100 200 300 400 500 520MHz Pin=23.3 dBm Vdd=7.5V 600 700 800 IDQ, BIAS CURRENT (mA) 4/10 PD54003 - PD54003S TYPICAL PERFORMANCE Output Power vs. Supply Voltage 5.5 5 Pout, OUTPUT POWER (W) 480MHz Drain Efficiency vs. Supply Voltage 70 480M Hz 4.5 4 3.5 520MHz 500M Hz Nd, DRAIN EFFICIENCY (%) 60 500MHz 50 40 520M Hz 3 2.5 2 1.5 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (V) Pin=23.3dBm Idq=50mA 30 Pin=23.3dBm Idq=50mA 20 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (V) Output Power vs. Gate-Source Voltage 5 Output Power vs. Input Power 5 480MHz 500MHz PD54003S Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 4 480MHz 4 520MHz 3 500MHz 520MHz 3 2 2 1 Pin=23.3dBm Vdd=7.5V 1 Vdd=7.5V Idq=50mA 0 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) 0 0 0.1 0.2 0.3 0.4 0.5 Pin, INPUT POWER (W) Power Gain vs. Output Power 16 480MHz Drain Efficiency vs. Output Power 70 520M Hz 14 Pg, POWER GAIN (dB) Nd, EFFICIENCY (%) 60 50 500MHz 12 480MHz 500MHz 520MHz 40 30 20 10 10 8 Vdd=7.5V Idq=50mA Vdd=7.5 V Idq=50mA 6 0 1 2 3 4 Pout, OUTPUT POWER (W) 0 1 2 3 4 Pout, OUTPUT POWER (W) 5/10 PD54003 - PD54003S TYPICAL PERFORMANCE Return Loss vs. Output Power 0 Output Power vs. Bias Current 3.5 3.4 520MHz Rtl, RETURN LOSS (dB) -10 500MHz 520MHz Pout, OUTPUT POWER (W) 3.3 3.2 3.1 3 480M Hz 500M Hz -20 2.9 2.8 2.7 2.6 Pin=22dBm Vdd=7.5V -30 480MHz Vdd=7.5V Idq=50 mA -40 0 1 2 3 4 Pout, OUTPUT POWER (W) 0 100 200 300 400 500 600 700 800 IDQ, BIAS CURRENT(mA) Drain Efficency vs. Bias Current 60 500MHz Output Power vs. Supply Voltage 6 Nd, DRAIN EFFICIENCY(%) 480M Hz Pout, OUTPUT POWER (W) 50 520MHz 5 520M Hz 480MHz 40 4 500MHz 30 3 20 Pin=22dBm Vdd=7.5V 2 Pin=22dBm Idq=50mA 10 0 100 200 300 400 500 600 700 800 IDQ, BIAS CURRENT (mA) 1 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (V) Drain Efficency vs. Supply Voltage 70 Output Power vs. Gate-Source Voltage 4 Nd, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (W) 480MHz 480MHz 60 500MHz 3 500MHz 520 MHz 50 520M Hz 2 40 Pin=22dBm Idq=50mA 1 Pin= 22dBm Vdd= 7.5V 30 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (V) 0 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) 6/10 PD54003 - PD54003S TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST B1,B2 C1,C13 C2,C3,C4,C10, C11,C12 C5 C6,C17 C7,C14 C8,C15 C9,C16 L1 N1,N2 R1 R2 SHORT FERRITE BEAD, FAIR RITE PRODUCTS (2743021446) 240pF, 100 mil CHIP CAPACITOR 0 TO 20pF TRIMMER CAPACITOR 130pF, 100 mil CHIP CAP 120pF, 100 mil CHIP CAP 10µF, 50V ELECTROLYTIC CAPACITOR 1,200pF, 100 mil CHIP CAPACITOR 0.1 F, 100 mil CHIP CAPACITOR 55.5 Nh, 5 TURN, COILCRAFT TYPE N FLANGE MOUNT 15 Ω, 0805 CHIP RESISTOR 1,0 KΩ, 1/8 W RESISTOR R3 R4 Z1 Z2 Z3 Z4 Z5 Z6,Z7 Z8 Z9 Z10 Z11 15 Ω, 0805 CHIP RESISTOR 33 KΩ, 1/8 W RESISTOR 0.175” X 0.080” MICROSTRIP 1.049” X 0.080” MICROSTRIP 0.289” X 0.080” MICROSTRIP 0.026” X 0.080” MICROSTRIP 0.192” X 0.223” MICROSTRIP 0.260” X 0.223” MICROSTRIP 0.064” X 0.080” MICROSTRIP 0.334” X 0.080” MICROSTRIP 0.985” X 0.080” MICROSTRIP 0.472” X 0.080” MICROSTRIP ROGER, ULTRA LAM 2000 BOARD THK 0.030”, r = 2.55 2oz. ED Cu 2 SIDES. ε 7/10 PD54003 - PD54003S TEST CIRCUIT TEST CIRCUIT PHOTOMASTER 6.4 inches 8/10 4 inches PD54003 - PD54003S PowerSO-10RF (Straight Lead) MECHANICAL DATA PowerSO-10RF (Formed Lead) MECHANICAL DATA 9/10 PD54003 - PD54003S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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