PD54003L

PD54003L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 20 dB gain @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • SUPPLIED IN TAPE & REEL OF 3K UNITS ORDER CODE PD54003L BRANDING 54003 PowerFLAT™(5x5) PIN CONNECTION DESCRIPTION The PD54003L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003L boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. PD54003L’s superior linearity performance makes it an ideal solution for portable radio. TOP VIEW ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 25 -0.5 to +15 4 19.5 150 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 4.1 °C/W May, 29 2003 1/8 PD54003L ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions VDS = 25 V VDS = 0 V ID = 50 mA ID = 0.5 A ID = 3.2 A VDS = 7.5 V VDS = 7.5 V VDS = 7.5 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 0.13 TBD 54 43 4.0 Min. Typ. Max. 1 1 5.0 0.16 Unit µA µA V V mho pF pF pF DYNAMIC Symbol POUT GPS ηD Load mismatch VDD = 7.5 V VDD = 7.5 V VDD = 7.5 V Test Conditions IDQ = 50 mA IDQ = 50 mA IDQ = 50 mA POUT = 3 W POUT = 3 W POUT = 3 W f = 500 MHz f = 500 MHz f = 500 MHz f = 500 MHz Min. 3 16 50 20:1 20 55 Typ. Max. Unit W dB % VSWR VDD = 9.5 V IDQ = 50 mA ALL PHASE ANGLES D ZDL Typical Input Impedance Typical Drain Load Impedance G Zin S SC13140 ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 M3 MOISTURE SENSITIVITY LEVEL Test Methodology J-STD-020B Rating MSL 3 2/8 PD54003L TYPICAL PERFORMANCE Capacitance Vs Supply Voltage 1000 Output Power Vs Input Power 5 4 100 C (pF) f = 500 MHz Ciss Coss Pout (W) Crss 3 2 10 1 Vds = 7.5 V Idq= 50 mA 1 0 2 4 6 8 Vds (V) 10 12 14 16 0 0 5 10 15 20 25 30 35 40 45 50 55 60 Pin (mW) Power Gain Vs Output Power 26 24 22 20 18 16 Gp (dB) 14 12 10 8 6 4 2 0 0 1 2 Pout (W) 3 4 5 Vds = 7.5 V Idq = 50 mA f = 500 MHz Efficiency Vs Output Power 80 70 60 50 Nd (%) 40 30 20 10 0 0 1 2 Pout (W) 3 4 5 Vds = 7.5 V Idq = 50 mA f = 500 MHz Output Power Vs Bias Current 4 3 Pout (W) f = 500 MHz 2 1 Vds = 7.5 V Pin= 15 dBm 0 0 50 100 150 200 250 Idq (mA) 300 350 400 450 500 3/8 PD54003L TYPICAL PERFORMANCE Efficiency Vs Bias Current 70 Output Power Vs Supply Voltage 8 7 60 6 Nd (%) 50 f = 500 MHz 40 Pout (W) 5 4 3 30 2 20 Vds = 7.5 V Pin= 15 dBm 10 0 50 100 150 200 250 Idq (mA) 300 350 400 450 500 1 0 5 6 7 Vds (V) 8 Idq = 50 mA Pin = 15 dBm f = 500 MHz 9 10 Output Power Vs Gate-Source Voltage 4 Pin = 15 dBm Vdd = 7.5 V f = 500 MHz 3 Pout (W) 2 1 0 0.0 0.5 1.0 1.5 Vgs (V) 2.0 2.5 3.0 4/8 PD54003L TYPICAL PERFORMANCE (BROADBAND) Power Gain Vs Frequency 20 18 16 14 Gp (dB) Nd (%) 50 Efficiency Vs Frequency 70 60 12 10 8 6 4 2 0 460 470 480 490 500 f (MHz) 510 520 530 540 Vds = 7.5 V Idq = 50 mA Pout= 3 W 40 30 20 Vds = 7.5 V Iqd = 50 mA Pout = 3 W 460 470 480 490 500 f (MHz) 510 520 530 540 10 0 Return Loss Vs Frequency 0 -5 RL (dB) -10 -15 -20 Vds = 7.5 V Idq = 50 mA Pout = 3 W -25 460 470 480 490 500 f (MHz) 510 520 530 540 5/8 PD54003L TAPE & REEL DIMENSIONS mm MIN. Ao Bo Ko 5.15 5.15 1.0 TYP. 5.25 5.25 1.1 MAX 5.35 5.35 1.2 6/8 PD54003L PowerFLAT™ MECHANICAL DATA DIM. A A1 A3 AA b c D d E E2 e f g h 2.49 0.15 0.43 0.64 mm MIN. TYP. 0.90 0.02 0.24 0.25 0.51 0.71 5.00 0.30 5.00 2.57 1.27 3.37 0.74 0.21 2.64 0.098 0.35 0.58 0.79 0.006 0.017 0.025 MAX 1.00 0.05 MIN. Inch TYP. 0.035 0.001 0.009 0.01 0.020 0.028 0.197 0.011 0.197 0.101 0.050 0.132 0.03 0.008 0.104 0.014 0.023 0.031 MAX 0.039 0.002 7/8 PD54003L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8