PD54008L
RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY
ADVANCED DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
• EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • BROADBAND PERFORMANCES POUT = 8 W WITH 15 dB GAIN @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • SUPPLIED IN TAPE & REEL OF 3K UNITS
PowerFLAT™(5x5) ORDER CODE PD54008L BRANDING 54008
DESCRIPTION The PD54008L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54008L boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. PD54008L’s superior linearity performance makes it an ideal solution for portable radio.
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 25 -0.5 to +15 5 26.7 150 -65 to +150 Unit V V A W °C °C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 3 °C/W
May, 28 2003
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PD54008L
ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section)
Symbol IDSS IGSS VGS(Q) VDS(ON) CISS COSS CRSS VGS = 0 V VGS = 5 V VDS = 10 V VGS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions VDS = 25 V VDS = 0 V ID = 50 mA ID = 0.5 A VDS = 7.5 V VDS = 7.5 V VDS = 7.5 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 0.09 80 60 6.6 Min. Typ. Max. 1 1 5.0 Unit µA µA V V pF pF pF
DYNAMIC
Symbol P1dB GPS ηD Load mismatch VDD = 7.5 V VDD = 7.5 V VDD = 7.5 V Test Conditions IDQ = 200 mA IDQ = 200 mA IDQ = 200 mA POUT = 8 W POUT = 8 W POUT = 8 W f = 500 MHz f = 500 MHz f = 500 MHz f = 500 MHz Min. 8 15 50 20:1 Typ. Max. Unit W dB % VSWR
VDD = 9.5 V IDQ = 200 mA ALL PHASE ANGLES
IMPEDANCE DATA (1) D FREQ. (MHz) 480 ZDL
Typical Input Impedance Typical Drain Load Impedance
ZIN (Ω) 1.12 - j 2.02 1.3 - j 2.01 1.66 - j 2.55
ZDL (Ω) 2.01 + j 0.13 1.84 + j 0.7 1.66 + j 1.51
500 520
(1) In Broadband amplifier
G Zin
S
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 2 M3
MOISTURE SENSITIVITY LEVEL
Test Methodology J-STD-020B Rating MSL 3
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PD54008L
TYPICAL PERFORMANCE Power Gain Vs Output Power
20 Idq = 200 mA 19 18
Efficiency Vs Output Power
80 70 60
17 Idq = 150 mA 16 Gp (dB) Idq = 100 mA 15 14 13
50 Nd (%) 40 30 20
12 11 10 0 1 2 3 4 5 Pout (W) 6 7 8 9 10 f = 500 MHz Vds = 7.5 V
10 0 0 1 2 3 4 5 Pout (W) 6 7
Idq = 200 mA f = 500 MHz Vds = 7.5 V
8
9
10
Return Loss Vs Output Power
0
Capacitance Vs Supply Voltage
1000
f = 1 MHz
-5
-10 RL (dB)
100 C (pF)
Ciss Coss
-15
-20 Idq = 200 mA f = 500 MHz Vds = 7.5 V
10 Crss
-25
-30 0 1 2 3 4 5 Pout (W) 6 7 8 9 10
1 0 1 2 3 4 5 Vds (V) 6 7 8 9
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PD54008L
TYPICAL PERFORMANCE Power Gain Vs Frequency (BROADBAND )
14
Efficiency Vs Frequency (BROADBAND )
70
12
60
10
50
Gp (dB)
6
Nd (%)
8
40
30
4
20
2 Idq = 150 mA Pin = 26 dBm 0 470 480 490 500 f (MHz) 510 520 530
10 Idq = 150 mA Pin = 26 dBm 0 470 480 490 500 f (MHz) 510 520 530
Return Loss Vs Frequency (BROADBAND)
0
-4
-8 RL (dB) -12 -16 Idq = 150 mA Pin = 26 dBm -20 470
480
490
500 f (MHz)
510
520
530
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PD54008L
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
COMPONENT B1, B2 C1, C16 C2, C3, C4, C13,C14 C15 C5 C6 C7 C8, C17 C9 C10, C18 C11, C19 C12, C20 C21 L R1 R3 R4 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 N1, N2 Board Ferrite bead 300 pF, 100 mil ATC 1 -:- 20 pF Trimmer cap - JOHANSON 0.8 -:- 10 pF Trimmer cap - JOHANSON 36 pF, 100 mil ATC 51 pF, 100 mil ATC 62 pF, 100 mil ATC 150 pF, 100 mil CHIP CAP 1 nF, 100 mil CHIP CAP 1000 pF, 100 mil CHIP CAP 0.1 nF, 100 mil CHIP CAP 10 µ F 50 V Electroly tic Capacitor 15 pF, 100 mil ATC 43nH, Coilcraft 33 K Ω , 1 W CHIP Resistor 1 K Ω , 1 W CHIP Resistor 15 Ω , 1 W CHIP Resistor 0.49" X 0.080" MICROSTRIP 1.024" X 0.080" MICROSTRIP 0.079" X 0.080" MICROSTRIP 0.24" X 0.223" MICROSTRIP 0.079" X 0.223" MICROSTRIP 0.138" X 0.223" MICROSTRIP 0.259" X 0.223" MICROSTRIP 0.079" X 0.080" MICROSTRIP 0.413" X 0.080" MICROSTRIP 0.756" X 0.080" MICROSTRIP 0.61" X 0.080" MICROSTRIP Type N Flange Mount ROGER, U LTRA LAM 2000 THK 0.030" , ε r = 2.55 2oz. ED cu SIDES DESCRIPTION
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PD54008L
TAPE & REEL DIMENSIONS
mm MIN. Ao Bo Ko 5.15 5.15 1.0 TYP. 5.25 5.25 1.1 MAX 5.35 5.35 1.2
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PD54008L PowerFLAT™ MECHANICAL DATA
DIM.
A A1 A3 AA b c D d E E2 e f g h 2.49 0.15 0.43 0.64 mm MIN. TYP. 0.90 0.02 0.24 0.25 0.51 0.71 5.00 0.30 5.00 2.57 1.27 3.37 0.74 0.21 2.64 0.098 0.35 0.58 0.79 0.006 0.017 0.025 MAX 1.00 0.05 MIN. Inch TYP. 0.035 0.001 0.009 0.01 0.020 0.028 0.197 0.011 0.197 0.101 0.050 0.132 0.03 0.008 0.104 0.014 0.023 0.031 MAX 0.039 0.002
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PD54008L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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