PD55015

PD55015 - PD55015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 13.5 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD55015 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies of up to 1GHz. PD55015 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55015’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. ABSOLUTE MAXIMUM RATINGS (TCASE = 25 OC) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature 0 PowerSO-10RF (Formed Lead) ORDER CODE BRANDING XPD55015 PD55015 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD55015S XPD55015S Value 40 ±20 5 73 165 -65 to 165 Unit V V A W 0C 0C THERMAL DATA R th(j-c) May 2000 Junction-Case Thermal Resistance 1.3 0 C/W 1/10 PD55015 - PD55015S ELECTRICAL SPECIFICATION (TCASE = 25 0C) STATIC Symbol IDSS IGSS V GS(Q) VDS(ON) gFS C ISS COSS C RSS VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Parameter VDS = 28 V VDS = 0 V ID = 150 mA ID = 2.5 A ID = 2.5 A VDS = 12.5 V VDS = 12.5 V VDS = 12.5 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 2.5 89 60 6.5 2.0 Min. Typ. Max. 1 1 5.0 0.8 Unit µA µA V V mho pF pF pF DYNAMIC Symbol POUT GPS ηD LOAD Mismatch f = 500 MHz f = 500 MHz f = 500 MHz Parameter VDD = 12.5 V VDD = 12.5 V VDD = 12.5 V IDQ = 150 mA POUT = 15 W POUT = 15 W POUT = 15 W IDQ = 150 mA IDQ = 150 mA IDQ = 150 mA 20:1 Min. 15 13.5 50 Typ. Max. Unit W dB % VSWR f = 500 MHz VDD = 15.5 V ALL PHASE ANGLES PIN CONNECTION SOURCE D ZDL GATE DRAIN G Zin Typical Input Impedance Typical Drain Load Impedance SC15200 SC13140 S PD55015 Frequency MHz 480 500 520 Zin IMPEDANCE DATA PD55015S Ω Zdl Ω Frequency MHz 480 500 520 Zin Ω Zdl Ω 2.13 - j1.09 1.95 - j.31 1.83 - j.70 1.55 + j.34 1.63 - j.25 1.43 + j.30 1.43 - j1.27 1.62 - j1.05 1.57 - j.91 1.47 + j.65 1.49 + j.58 1.35 +j.36 2/10 PD55015 - PD55015S TYPICAL PERFORMANCE Capacitance vs. Drain Voltage 1000 Drain Current vs. Gate Voltage 4 3.5 Id, DRAIN CURRENT (A) C, CAPACITANCE (pF) 3 2.5 2 1.5 1 VDS= 10V 100 Ciss Coss 10 Crss f=1MHz 1 0 5 10 15 20 25 0.5 0 2.5 3 3.5 4 4.5 5 VDS, DRAIN-SOURCE VOLTAGE (V) Vgs, GATE-SOURCE VOLTAGE (V) Gate-Source Volatge vs. Case Temperature VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 1.04 1.02 ID = 3A ID = 2A 1 ID = 1.5A 0.98 VDS = 10V ID = 1A ID = .25A 0.96 -25 0 25 50 75 Tc, CASE TEMPERATURE (° C) 3/10 PD55015 - PD55015S TYPICAL PERFORMANCE Output Power vs. Input Power 18 16 480M Hz 520MHz PD55015 Power Gain vs. Output Power 18 Pout, OUTPUT POWER (W) Gp, POWER GAIN (dB) 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VDD =12.5V IDQ=150m A 500MHz 16 480MHz 14 500MHz 12 520MHz 10 VDD =12.5V IDQ =150mA 8 0 2 4 6 8 10 12 14 16 18 Pin, INPUT POWER (W) Pout, OUTPUT POWER (W) Drain Efficiency vs. Output Power 70 480MHz Return Loss vs. Output Power 0 60 Nd, DRAIN EFFICIENCY (%) 480MHz Rtl, RETURN LOSS (dB) 50 -10 500MHz 40 520MHz -20 500MHz 30 20 VDD=12.5V IDQ=150m A 520MHz -30 VDD =12.5V IDQ =150mA 10 0 0 2 4 6 8 10 12 -40 14 16 18 0 2 4 6 8 10 12 14 16 18 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Output Power vs. Bias Current 20 480MHz Drain Efficiency vs. Bias Current 70 500MHz Pout, OUTPUT POWER (W) Nd, DRAIN EFFICIENCY (%) 18 500MHz 60 16 520MHz 480MHz 14 50 520MHz 12 40 VDD =12.5V Pin=0.8W 10 VDD =12.5V Pin=0.8W 8 0 200 400 600 800 1000 30 0 200 400 600 800 1000 Idq, BIAS CURRENT (mA) Idq, BIAS CURRENT (mA) 4/10 PD55015 - PD55015S TYPICAL PERFORMANCE Output Power vs. Drain Voltage 25 500MHz Drain Efficency vs. Drain Voltage 70 500MHz Pout, OUTPUT POWER (W) 20 480MHz Nd, DRAIN EFFICIENCY (%) 60 520MHz 480MHz 15 520MHz 50 10 40 Idq=150mA Pin=0.8W 5 Idq=150mA Pin=0.8W 0 7 8 9 10 11 12 13 14 15 16 17 30 7 8 9 10 11 12 13 14 15 16 17 VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Output Power vs. Gate Bias Voltage 20 480MHz Output Power vs. Input Power 18 16 480MHz PD55015S Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 15 14 520MHz 12 10 8 6 4 2 0 VDD =12.5V IDQ =150mA 500MHz 520MHz 10 500MHz 5 VDD =12.5V Pin=0.8W 0 0 0.5 1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2 VGS, GATE BIAS VOLTAGE (V) Pin, INPUT POWER (W) Power Gain vs. Output Power 18 Drain Efficiency vs. Output Power 70 500MHz 480MHz 60 Nd, DRAIN EFFICIENCY (%) 16 500MHz Gp, POWER GAIN (dB) 50 480MHz 520MHz 14 520MHz 40 12 30 20 10 VDD =12.5V IDQ =150 mA 10 VDD =12.5V IDQ =150mA 8 0 2 4 6 8 10 12 14 16 18 0 0 2 4 6 8 10 12 14 16 18 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 5/10 PD55015 - PD55015S TYPICAL PERFORMANCE Return Loss vs. Output Power 0 Output Power vs. Bias Current 20 Pout, OUTPUT POWER (W) 18 480MHz Rtl, RETURN LOSS (dB) -10 500MHz 16 500MHz 520MHz 480MHz -20 14 520M Hz 12 VDD =12.5V Pin=0.5 W -30 VDD =12.5V IDQ =150mA 520MHz 10 -40 0 2 4 6 8 10 12 14 16 18 8 0 200 400 600 800 1000 Pout, OUTPUT POWER (W) Idq, BIAS CURRENT (mA) Drain Efficiency vs. Bias Current 70 Output Power vs. Drain Voltage 25 480MHz Nd, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (W) 20 500MHz 60 480MHz 500MHz 15 520MHz 50 520MHz 10 40 VDD =12.5V Pin=0.5W 5 Idq=150mA Pin=0.5W 30 0 200 400 600 800 1000 0 7 8 9 10 11 12 13 14 15 16 17 Idq, BIAS CURRENT (mA) VDS, DRAIN-SOURCE VOLTAGE (V) Drain Efficency vs. Drain Voltage 70 480MHz Output Power vs. Gate Bias Voltage 20 Nd, DRAIN EFFICIENCY (%) 60 Pout, OUTPUT POWER (W) 500MHz 480MHz 15 500MHz 520MHz 50 10 520MHz 40 Idq=150m A Pin=0.5W 5 VDD =12.5V Pin=0.5W 30 7 8 9 10 11 12 13 14 15 16 17 0 0 0.5 1 1.5 2 2.5 3 3.5 VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE BIAS VOLTAGE (V) 6/10 PD55015 - PD55015S TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST B1,B2 C1,C12 C2,C3,C4,C11, C12,C13 C6,C18 C9,C15 C8,C16 C7,C17 C5, C10 L1 N1,N2 FERRITE BEAD 300pF, 100 mil CHIP CAPACITOR 1 TO 20 pF TRIMMER CAPACITOR pF 100 mil CHIP CAP 10µF, 50V ELECTROLYTIC CAPACITOR 0.1mF, 100 mil CHIP CAP 1,000pF 100 mil CHIP CAP 33pF, 100 mil CHIP CAP 56nH, 7 TURN, COILCRAFT TYPE N FLANGE MOUNT R2 R3 Z1 Z2 Z3 Z4,Z5 Z6 Z7 Z8 Z9 1 kΩ, 1W CHIP RESISTOR 33 kΩ, 1W CHIP RESISTOR 0.471” X 0.080” MICROSTRIP 1.082” X 0.080” MICROSTRIP 0.372” X 0.080” MICROSTRIP 0.260” X 0.223” MICROSTRIP 0.050” X 0.080” MICROSTRIP 0.551” X 0.080” MICROSTRIP 0.825” X 0.080” MICROSTRIP 0.489” X 0.080” MICROSTRIP ROGER, ULTRA LAM 2000 R1 15 Ω, 1W CHIP RESISTOR BOARD THK 0.030” εr = 2.55 2oz ED Cu 2 SIDES 7/10 PD55015 - PD55015S TEST CIRCUIT TEST CIRCUIT PHOTOMASTER 6.4 inches 8/10 4 inches PD55015 - PD55015S PowerSO-10RF (Straight Lead) MECHANICAL DATA PowerSO-10RF (Formed Lead) MECHANICAL DATA 9/10 PD55015 - PD55015S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 10/10