PD55015TR-E

PD55025-E PD55025S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 25W with 14.5dB gain @ 500MHz / 12.5V New RF plastic package PowerSO-10RF (formed lead) Description The PD55025 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55025 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55025’s superior linearity performance makes it an ideal solution for car mobile radio. PowerSO-10RF (straight lead) Pin connection Source The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Gate Drain Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Order codes Part number PD55025-E PD55025S-E PD55015TR-E PD55015STR-E Package PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Packing Tube Tube Tape and reel Tape and reel May 2006 Rev 1 1/22 www.st.com 22 Contents PD55025-E, PD55025S-E Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 4 5 6 7 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7.1 7.2 7.3 7.4 PD55025S (VDS = 12.5V ID = 500mA) . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PD55025S (VDS = 12.5V ID = 1.5A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PD55025S (VDS = 12.5V ID = 3A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 PD55025S (VDS = 13.8V IDS = 3A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 8 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 PD55025-E, PD55025S-E Electrical data 1 1.1 Electrical data Maximum ratings Table 1. Symbol V(BR)DSS VGS ID PDISS TJ TSTG Absolute maximum ratings (TCASE = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70°C) Max. operating junction temperature Storage temperature Value 40 ± 20 7 79 165 -65 to +150 Unit V V A W °C °C 1.2 Thermal data Table 2. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Value 1.2 Unit °C/W 3/22 Electrical Characteristics PD55025-E, PD55025S-E 2 Electrical Characteristics TCASE = +25 oC 2.1 Static Table 3. Symbol IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0V VGS = 20V VDS = 28V VGS = 10V VDS = 10V VGS = 0V VGS = 0V VGS = 0V Static Test conditions VDS = 28V VDS = 0V ID = 100mA ID = 3A ID = 3A VDS = 12.5V VDS = 12.5V VDS = 12.5V f = 1MHz f = 1MHz f = 1MHz 2.5 86 76 5.8 2.0 0.7 Min. Typ. Max. 1 1 5.0 0.8 Unit µA µA V V mho pF pF pF 2.2 Dynamic Table 4. Symbol POUT GP hD Dynamic Test conditions VDD = 12.5V, IDQ = 200mA f = 500MHz Min. 25 14.5 50 20:1 Typ. Max. Unit W dB % VSWR VDD = 12.5V, IDQ = 200mA, POUT = 25W, f = 500MHz VDD = 12.5V, IDQ = 200mA, POUT = 25W, f = 500MHz Load VDD = 15.5V, IDQ = 200mA, POUT = 25W, f = 500MHz mismatch All phase angles 4/22 PD55025-E, PD55025S-E Impedance 3 Impedance Figure 1. Current conventions Table 5. Impedance data Freq. (MHz) 175 480 500 520 ZIN (Ω) 3.20 - j 4.41 1.01 - j 1.67 0.93 - j 1.53 0.88 - j 1.98 ZDL(Ω) 1.56 + j 2.14 1.06 + j 0.22 1.12 + j 0.20 1.07 + j 0.83 5/22 Typical performance PD55025-E, PD55025S-E 4 Figure 2. Typical performance Capacitance vs supply voltage Figure 3. Drain current vs gate source voltage 1000 6 Vds = 10 V 5 C is s 100 C os s Id (A) 3 4 C (pF) 10 2 C rs s f = 1 MHz 1 0 4 8 12 16 20 24 28 Vds (V) 1 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Vgs (V) Figure 4. Gate-source voltage vs case temperature Figure 5. Output power vs input power 1.04 45 40 480 MHz 500 MHz 520 MHz 35 1.02 Id = 5 A 30 1.00 Id (A) Id = 3 A 0.98 Id = 2 A Id = 1 A 0.96 Vds = 10 V 0.94 -25 0 25 Vgs (V) 50 75 100 Pout (W) Id = 4 A 25 20 15 10 5 Vdd = 12.5 V Id q = 2 00 m A Id = .5 A 0 0.00 1.00 2.00 3.00 P in (W ) 4.00 5.00 6.00 6/22 PD55025-E, PD55025S-E Typical performance Figure 6. 45 40 35 30 Pout (W) 25 20 15 10 5 0 0 Output power vs input power Figure 7. 18 Power gain vs. output power Vdd = 13.8 V 16 14 Vdd = 12.5 V 12 Gp (dB) 10 520 MHz 8 6 4 480 MHz 500 MHz f = 520 MHz Idq = 200 m A 2 0 0 10 20 P out (W ) 30 Vdd = 12.5 V Idq = 200 m A 1 2 3 Pin (W ) 4 5 6 40 50 Figure 8. 70 Drain efficiency vs output power Figure 9. 0 -5 Input return loss vs output power 60 500 MHz 50 480, 520 MHz RL (dB) Vdd = 12.5 V Idq = 200 m A -10 -15 -20 -25 500 MHz 480 MHz Nd (%) 40 30 20 Vdd = 12.5 V Idq = 200 m A -30 -35 -40 520 MHz 10 0 0 10 20 P out (W ) 30 40 50 0 10 20 P out (W ) 30 40 50 7/22 Typical performance PD55025-E, PD55025S-E Figure 10. Output power vs bias current 40 35 Figure 11. Drain efficiency vs bias current 60 50 30 480 MHz 25 Pout (W) 520 MHz 20 15 500 MHz 500 MHz 480 MHz 520 MHz 40 Nd (%) 30 20 10 10 5 0 0 200 400 600 Idq (m A) 800 1000 1200 Vdd = 12.5 V Pin = 0.85 W Vdd = 12.5 V Pin = 0.85 W 0 0 200 400 600 Idq (m A) 800 1000 1200 Figure 12. Output power vs supply voltage 35 480 MHz 30 500 MHz 25 520 MHz Pout (W) Figure 13. Drain efficiency vs supply voltage 70 60 500 MHz 50 500 MHz Nd (%) 20 40 520 MHz 30 15 10 Idq = 200 m A P in = 0.85 W 20 5 10 Idq = 200 m A Pin = 0.85 W 6 8 10 12 Vdd (V) 14 16 18 0 5 7 9 11 13 15 17 19 Vdd (V) 0 8/22 PD55025-E, PD55025S-E Typical performance Figure 14. Output power vs gate bias voltage Figure 15. Output power vs input power (f = 175 MHz) 45 40 30 25 35 20 Pout (W) 480 MHz Pout (W) 30 25 20 15 10 15 500 MHz 520 MHz 10 5 Vdd = 12.5 V Pin = 0.85 W 0 0 1 2 Vgs (V) 3 4 5 0 0 0.5 1 Pin (W ) 1.5 Vdd = 12.5 V Idq = 200 m A 2 2.5 Figure 16. Power gain vs output power (f = 175 MHz) 30 Figure 17. Drain efficiency vs output power (f = 175 MHz) 80 70 25 60 20 50 Gp (W) 15 Nd (%) Vdd = 12.5 V Idq = 200 m A 40 30 10 20 5 10 0 0 10 20 P out (W ) 30 40 50 0 10 20 P out (W ) 30 40 50 Vdd = 12.5 V Idq = 200 m A 0 9/22 Typical performance Figure 18. Input return loss vs output power (f = 175 MHz) 0 PD55025-E, PD55025S-E -5 -10 RL (dB) -15 -20 -25 Vdd = 12.5 V Idq = 200 m A - 30 0 10 20 P out (W ) 30 40 50 10/22 PD55025-E, PD55025S-E Test circuit 5 Test circuit Figure 19. 500MHz test circuit schematic (engineering) VGG + B1 B2 VDD + C10 C9 C8 R3 R2 C19 L1 C18 C17 C16 R1 C7 Z4 DUT Z5 Z6 Z7 Z8 Z9 C15 RF INPUT Z1 C1 C2 Z2 N2 Z3 RF OUTPUT C3 C4 C5 C6 C13 C12 C11 C14 Table 6. Test circuit component part list Component B1,B2 C1,C13 FERRITE BEAD 300 pF, 100 mil CHIP CAPACITOR 1 to 20 pF TRIMMER CAPACITOR 39 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 120 pF 100 mil CHIP CAPACITOR 10 µF, 50 V ELECTROLYTIC CAPACITOR 0.1 mF, 100 mil CHIP CAP 1.000 pF 100 mil CHIP CAP 33 pF, 100 mil CHIP CAP 56 nH, 7 TURN, COILCRAFT TYPE N FLANGE MOUNT 15 Ω 1 W CHIP RESISTOR , 1 KΩ 1 W CHIP RESISTOR , 33 KΩ 1 W CHIP RESISTOR , 0.471” X 0.080” MICROSTRIP 1.082” X 0.080” MICROSTRIP 0.372” X 0.080” MICROSTRIP 0.260” X 0.223” MICROSTRIP 0.050” X 0.080” MICROSTRIP 0.551” X 0.080” MICROSTRIP 0.825” X 0.080” MICROSTRIP 0.489” X 0.080” MICROSTRIP ROGER, ULTRA LAM 2000 THK 0.030”, ε r = 2.55 2oz. ED cu 2 SIDES. Description C2,C3,C4,C12,C13,C14 C6 C7, C19 C10, C16 C9, C17 C8, C18 C5, C11 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4,Z5 Z6 Z7 Z8 Z9 BOARD 11/22 Circuit layout PD55025-E, PD55025S-E 6 Circuit layout Figure 20. 500MHz test circuit BIAS VDD GND Figure 21. 500MHz test circuit photomaster 12/22 PD55025-E, PD55025S-E Figure 22. 175MHz test circuit schematic (engineering) + V G G Circuit layout F1 B F2 B C 1 1 C 1 2 C 1 3 + V D D ) C 8 C 9 C 1 0 R 1 R 2 C 1 4 C 1 6 C 1 5 L 1 R 3 R F I PT N U C 1 R 5 R 4 C 6 C 4 C 5 C 2 C 3 C 7 Table 7. 175MHz test circuit component part list Description 300 pF CHIP CAPACITOR 91 pF CHIP CAPACITOR 75 pF CHIP CAPACITOR 1-20 pF TRIMMER CAPACITOR .01 µF MOLDED CAPACITOR 10 µF ELECTROLYTIC CAPACITOR .1 µF CHIP CAPACITOR 1000 pF CHIP CAPACITOR 1200 pF CHIP CAPACITOR FERRITE BEAD 33 KΩ CHIP RESISTOR 17 Ω CHIP RESISTOR 15 Ω CHIP RESISTOR 47 Ω CHIP RESISTOR 220 Ω CHIP RESISTOR 5 TURN, 16 AWG MAGNET WIRE, ID = .40” ,INDUCTOR ROGER, ULTRA LAM 2000, THK 0.030”, ε r = 2.55 2oz. ED cu 2 SIDES. Component C1, C6 C2, C3 C4, C14 C5 C7 C8, C13 C9, C12 C10, C11 C15, C16 FB1, FB2 R1 R2 R3 R4 R5 L1 BOARD ) R F OTU UPT 13/22 Common source s-parameter PD55025-E, PD55025S-E 7 7.1 Common source s-parameter PD55025S (VDS = 12.5V ID = 500mA) Table 8. S-parameter IS11I 0.837 0.846 0.862 0.878 0.895 0.910 0.921 0.932 0.941 0.946 0.953 0.957 0.960 0.964 0.966 0.968 0.970 0.971 0.972 0.972 S11∠Φ -162 -169 -171 -173 -174 -174 -175 -176 -177 -178 -178 -179 -180 180 179 178 178 177 177 176 IS21I 13.33 6.51 4.15 2.93 2.20 1.71 1.36 1.11 0.92 0.78 0.66 0.57 0.50 0.44 0.39 0.95 0.31 0.28 0.26 0.23 S21∠Φ 89 76 66 58 51 45 40 35 31 27 24 21 18 16 14 12 10 8 6 5 IS12I 0.018 0.017 0.016 0.015 0.013 0.012 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.004 0.003 0.002 0.002 0.002 0.002 0.003 S12∠Φ -1 -12 -19 -26 -31 -36 -40 -42 -43 -44 -43 -42 -39 -34 -29 -15 -2 16 34 45 IS22I 0.780 0.803 0.831 0.859 0.874 0.886 0.892 0.897 0.915 0.932 0.946 0.964 0.975 0.976 0.981 0.979 0.964 0.960 0.953 0.940 S22∠Φ -168 -172 -172 -172 -172 -173 -173 -175 -176 -177 -178 -179 -178 -179 -179 -179 -179 180 179 178 FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 7.2 PD55025S (VDS = 12.5V ID = 1.5A) Table 9. FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S-parameter IS11I 0.876 0.880 0.887 0.895 0.905 0.915 0.922 0.931 0.938 0.942 0.948 0.952 0.954 0.959 0.961 0.963 0.966 0.967 0.968 0.968 S11∠Φ -164 -172 -174 -175 -176 -176 -177 -178 -178 -179 -179 -180 180 179 178 178 177 177 176 176 IS21I 13.87 6.87 4.46 3.22 2.47 1.96 1.60 1.32 1.11 0.95 0.82 0.71 0.63 0.55 0.49 0.45 0.40 0.36 0.33 0.30 S21∠Φ 90 79 71 64 58 52 47 42 38 34 31 28 25 22 20 17 15 13 11 9 IS12I 0.013 0.012 0.012 0.011 0.010 0.009 0.009 0.008 0.007 0.006 0.005 0.005 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 S12∠Φ 1 -7 -13 -18 -22 -25 -28 -30 -31 -31 -30 -27 -22 -16 -6 3 17 27 38 45 IS22I 0.823 0.838 0.855 0.873 0.879 0.885 0.886 0.889 0.906 0.923 0.937 0.956 0.967 0.969 0.973 0.970 0.956 0.952 0.945 0.933 S22∠Φ -172 -175 -176 -175 -175 -175 -175 -177 -178 -179 -179 -179 -179 -179 -179 -179 -180 179 179 177 14/22 PD55025-E, PD55025S-E Common source s-parameter 7.3 PD55025S (VDS = 12.5V ID = 3A) Table 10. FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S-parameter IS11I 0.890 0.892 0.898 0.904 0.913 0.921 0.926 0.935 0.941 0.944 0.949 0.953 0.955 0.959 0.961 0.963 0.966 0.967 0.968 0.969 S11∠Φ -165 -172 -174 -175 -176 -177 -177 -178 -179 -179 -180 180 179 179 178 177 177 176 176 175 IS21I 13.19 6.55 4.28 3.11 2.39 1.91 1.57 1.31 1.10 0.94 0.82 0.71 0.63 0.56 0.50 0.45 0.41 0.37 0.34 0.31 S21∠Φ 91 81 73 66 60 54 49 44 40 36 33 29 26 24 21 19 17 15 15 11 IS12I 0.012 0.011 0.011 0.010 0.010 0.009 0.008 0.007 0.007 0.006 0.005 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.004 S12∠Φ 2 -6 -12 -15 -20 -23 -25 -27 -28 -27 -25 -21 -17 -10 -2 10 22 32 41 49 IS22I 0.837 0.846 0.865 0.879 0.883 0.089 0.887 0.889 0.905 0.921 0.936 0.954 0.964 0.965 0.968 0.966 0.952 0.948 0.942 0.930 S22∠Φ -174 -176 -176 -176 -176 -176 -176 -177 -179 -179 -180 180 -180 -180 -180 -179 -180 180 179 177 7.4 PD55025S (VDS = 13.8V IDS = 3A) Table 11. S-parameter IS11I 0.849 0.881 0.895 0.903 0.912 0.921 0.927 0.936 0.943 0.946 0.952 0.955 0.957 0.961 0.963 0.965 0.968 0.969 0.970 0.971 S11∠Φ -164 -171 -173 -175 -176 -176 -177 -178 -178 -179 -180 180 179 179 178 178 177 176 176 175 IS21I 13.99 6.94 4.51 3.27 2.50 1.99 1.62 1.35 1.13 0.97 0.83 0.72 0.64 0.56 0.50 0.45 0.41 0.37 0.34 0.31 S21∠Φ 91 80 72 65 58 52 47 42 38 34 31 27 24 22 19 17 15 13 11 9 IS12I 0.012 0.011 0.011 0.010 0.010 0.009 0.008 0.007 0.006 0.006 0.005 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 S12∠Φ 2 -6 -12 -16 -21 -24 -27 -29 -29 -29 -26 -23 -17 -8 2 14 27 36 45 54 IS22I 0.833 0.841 0.857 0.871 0.877 0.882 0.883 0.886 0.904 0.920 0.935 0.955 0.965 0.967 0.970 0.968 0.953 0.949 0.943 0.930 S22∠Φ -173 -175 -175 -175 -175 -175 -176 -177 -178 -179 -179 -180 -179 -179 -179 -179 -179 180 179 178 FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 15/22 Package mechanical data PD55025-E, PD55025S-E 8 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 16/22 PD55025-E, PD55025S-E Table 12. Dim. Min. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G L R1 R2 T T1 T2 2 deg 0.8 5 deg 6 deg 10 deg 8 deg 2 deg 0.8 5.4 0.23 9.4 7.4 13.85 9.3 7.3 5.9 0 3.4 1.2 0.15 Package mechanical data PowerSO-10RF Formed lead (Gull Wing) Mechanical data mm. Typ. 0.05 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 14.1 9.4 7.4 6.1 0.5 1.2 1 1.1 0.25 0.031 5 deg 6 deg 10 deg 8 deg 0.030 5.65 0.32 9.6 7.6 14.35 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.544 0.365 0.286 0.231 Max. 0.1 3.6 1.4 0.25 Min. 0. 0.134 0.046 0.005 Inch Typ. 0.0019 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.555 0.37 0.292 0.24 0.019 0.047 0.039 0.042 0.01 0.221 0.012 0.377 0.298 0.565 0.375 0.294 0.247 Max. 0.0038 0.142 0.054 0.009 Note: Resin protrusions not included (max value: 0.15 mm per side) Figure 23. Package dimensions Critical dimensions: - Stand-off (A1) - Overall width (L) 17/22 Package mechanical data Table 13. Dim. Min. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G R1 R2 T1 T2 0.8 6 deg 10 deg 5.4 0.23 9.4 7.4 15.15 9.3 7.3 5.9 1.62 3.4 1.2 0.15 PD55025-E, PD55025S-E PowerSO-10RF Straight Lead Mechanical data mm. Typ. 1.67 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 15.4 9.4 7.4 6.1 0.5 1.2 0.25 0.031 6 deg 10 deg 5.65 0.32 9.6 7.6 15.65 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.595 0.365 0.286 0.231 Max. 1.72 3.6 1.4 0.25 Min. 0.064 0.134 0.046 0.005 Inch Typ. 0.065 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.606 0.37 0.292 0.24 0.019 0.047 0.01 0.221 0.012 0.377 0.298 0.615 0.375 0.294 0.247 Max. 0.068 0.142 0.054 0.009 Note: Resin protrusions not included (max value: 0.15 mm per side) Figure 24. Package dimensions CRITICAL DIMENSIONS: - Overall width (L) 18/22 PD55025-E, PD55025S-E Figure 25. Tube information Package mechanical data 19/22 Package mechanical data Figure 26. Reel information PD55025-E, PD55025S-E 20/22 PD55025-E, PD55025S-E Revision history 9 Revision history Table 14. Date 29-Apr-2006 Revision history Revision 1 Initial release. Changes 21/22 PD55025-E, PD55025S-E Please Read Carefully: Information in this document is provided solely in connection with ST products. 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