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PD55025

PD55025

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    PowerSO10_EP

  • 描述:

    FET RF 40V 500MHZ PWRSO-10

  • 数据手册
  • 价格&库存
PD55025 数据手册
PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF (formed lead) DESCRIPTION The PD55025 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55025 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55025’s superior linearity performance makes it an ideal solution for car mobile radio. (s) t c u ) s t( BRANDING PD55025 c u d e t le o s b O - The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. d o r P e ORDER CODE PD55025 o r P PowerSO-10RF (straight lead) ORDER CODE PD55025S BRANDING PD55025S Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) t e l o ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol s b O Parameter Value Unit V(BR)DSS Drain-Source Voltage 40 V VGS Gate-Source Voltage ± 20 V Drain Current 7 A Power Dissipation (@ Tc = 70°C) 79 W ID PDISS Tj TSTG Max. Operating Junction Temperature Storage Temperature 165 °C -65 to +150 °C 1.2 °C/W THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance March, 21 2003 1/13 PD55025 - PD55025S ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol Test Conditions IDSS VGS = 0 V VDS = 28 V IGSS VGS = 20 V VDS = 0 V VGS(Q) VDS = 28 V ID = 100 mA VDS(ON) VGS = 10 V ID = 3 A GFS VDS = 10 V ID = 3 A Min. Typ. 2.0 0.7 Max. Unit 1 µA 1 µA 5.0 V 0.8 V 2.5 mho CISS VGS = 0 V VDS = 12.5 V f = 1 MHz 86 pF COSS VGS = 0 V VDS = 12.5 V f = 1 MHz 76 pF CRSS VGS = 0 V VDS = 12.5 V f = 1 MHz 5.8 pF DYNAMIC Symbol Test Conditions Min. f = 500 MHz Typ. Pout VDD = 12.5 V IDQ = 200 mA GP VDD = 12.5 V IDQ = 200 mA POUT = 25 W f = 500 MHz 14.5 ηD VDD = 12.5 V IDQ = 200 mA POUT = 25 W f = 500 MHz 50 Load mismatch VDD = 12.5 V IDQ = 200 mA ALL PHASE ANGLES POUT = 25 W f = 500 MHz SOURCE ) s ( ct o s b O - u d o s b O 2/13 W dB % VSWR ZDL Typical Drain Load Impedance Zin r P e Unit D G t e l o SC15200 c u d Typical Input Impedance DRAIN ) s t( o r P 20:1 e t le PIN CONNECTION GATE 25 Max. S SC13140 IMPEDANCE DATA PD55025S FREQ. MHz ZIN (Ω) ZDL(Ω) 175 3.20 - j 4.41 1.56 + j 2.14 480 1.01 - j 1.67 1.06 + j 0.22 500 0.93 - j 1.53 1.12 + j 0.20 520 0.88 - j 1.98 1.07 + j 0.83 PD55025 - PD55025S TYPICAL PERFORMANCE (PD55025S) Capacitance vs. Supply Voltage Drain Current vs Gate-Source Voltage 1000 6 Vds = 10 V 5 Cis s 100 4 Id (A) C (pF) Coss 10 3 2 C rs s 1 f = 1 MHz 1 0 0 4 8 12 16 20 24 28 2.0 2.5 3.0 3.5 Vds (V) 4.5 5.0 Output Power vs Input Power Gate-Source Voltage vs Case Temperature 1.04 c u d 45 5.5 1.02 ro 35 P e let Id = 5 A 30 1.00 Pout (W) Id (A) Id = 4 A Id = 3 A 0.98 Id = 2 A 25 520 MHz o s b O 20 ) s t( 500 MHz 480 MHz 40 15 Id = 1 A 10 0.96 ) s ( ct Vds = 10 V Id = .5 A 0.94 -25 0 25 50 75 Vgs (V) r P e t e l o 40 0 0.00 3.00 4.00 5.00 6.00 18 16 14 s b O 30 2.00 Pin (W ) Vdd = 13.8 V 35 1.00 Power Gain vs Output Power Output Power vs Input Power 45 Vdd = 12.5 V Idq = 200 m A 5 100 u d o Vdd = 12.5 V 12 25 Gp (dB) Pout (W) 4.0 Vgs (V) 20 15 480 MHz 10 520 MHz 500 MHz 8 6 4 10 f = 520 MHz Idq = 200 m A 5 Vdd = 12.5 V Idq = 200 m A 2 0 0 0 1 2 3 Pin (W ) 4 5 6 0 10 20 30 40 50 P out (W ) 3/13 PD55025 - PD55025S (PD55025S) TYPICAL PERFORMANCE Input Return Loss vs Output Power Drain Efficiency vs Output Power 70 0 Vdd = 12.5 V Idq = 200 m A -5 60 500 MHz -10 -15 480, 520 MHz 40 RL (dB) Nd (%) 50 30 480 MHz -20 -25 500 MHz 20 -30 520 MHz Vdd = 12.5 V Idq = 200 m A 10 -35 0 -40 0 10 20 30 40 50 0 10 20 Pout (W ) 40 Drain Efficiency vs Bias Current Output Power vs Bias Curent 40 c u d 60 35 o r P 50 30 480 MHz 40 500 MHz 25 e t le 520 MHz Nd (%) Pout (W) 30 50 P out (W ) 20 15 30 ) s t( 500 MHz 480 MHz 520 MHz o s b O 20 10 10 5 ) s ( ct Vdd = 12.5 V P in = 0.85 W 0 0 200 400 600 800 1000 Idq (m A) r P e 800 1000 1200 70 60 500 MHz 50 500 MHz 520 MHz 20 40 520 MHz 15 30 10 20 Idq = 200 m A P in = 0.85 W 5 10 Idq = 200 m A Pin = 0.85 W 0 0 5 7 9 11 13 Vdd (V) 4/13 600 Idq (m A) Nd (%) Pout (W) O 400 500 MHz bs 25 200 480 MHz t e l o 30 0 Drain Efficiency vs Supply Voltage Output Power vs Supply Voltage 35 0 1200 u d o Vdd = 12.5 V P in = 0.85 W 15 17 19 6 8 10 12 Vdd (V) 14 16 18 PD55025 - PD55025S TYPICAL PERFORMANCE (PD55025S) Output Power vs Gate-Source Voltage Output Power vs Input Power (f = 175 MHz) 30 45 40 25 35 20 30 15 Pout (W) Pout (W) 480 MHz 500 MHz 25 20 520 MHz 15 10 10 5 Vdd = 12.5 V Pin = 0.85 W Vdd = 12.5 V Idq = 200 m A 5 0 0 0 1 2 3 0 4 0.5 1 2 2.5 ) s t( Drain Efficiency vs Output Power (f = 175 MHz) Power Gain vs Output Power (f = 175 MHz) 30 c u d 80 70 25 60 e t le 20 Nd (%) 50 Gp (W) 1.5 Pin (W ) Vgs (V) 15 o r P o s b O 40 30 10 20 Vdd = 12.5 V Idq = 200 m A 5 ct 0 0 10 20 30 u d o Pout (W ) (s) 40 50 Vdd = 12.5 V Idq = 200 m A 10 0 0 10 20 30 40 50 P out (W ) r P e Input Return Loss vs Output Power (f = 175 MHz) t e l o 0 -5 s b O RL (dB) -10 -15 -20 Vdd = 12.5 V Idq = 200 m A -25 -30 0 10 20 30 40 50 P out (W ) 5/13 PD55025 - PD55025S 500 MHz TEST CIRCUIT SCHEMATIC (ENGINEERING) VGG + B1 + R3 C8 C9 C10 VDD B2 R2 C18 C19 C17 C16 L1 RF INPUT C7 R1 Z1 Z2 Z3 Z4 DUT Z5 Z6 Z7 C1 C2 C4 C3 C5 C6 C12 C11 Z8 Z9 C13 C14 C15 N2 500 MHz TEST CIRCUIT COMPONENT PART LIST COMPONENT B1,B2 C1,C13 C2,C3,C4,C12,C13,C14 C6 C7, C19 C10, C16 C9, C17 C8, C18 C5, C11 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4,Z5 Z6 Z7 Z8 Z9 s b O BOARD 6/13 c u d DESCRIPTION FERRITE BEAD 300 pF, 100 mil CHIP CAPACITOR 1 to 20 pF TRIMMER CAPACITOR 39 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 120 pF 100 mil CHIP CAPACITOR 10 µF, 50 V ELECTROLYTIC CAPACITOR 0.1 mF, 100 mil CHIP CAP 1.000 pF 100 mil CHIP CAP 33 pF, 100 mil CHIP CAP 56 nH, 7 TURN, COILCRAFT TYPE N FLANGE MOUNT 15 Ω, 1 W CHIP RESISTOR 1 KΩ, 1 W CHIP RESISTOR 33 KΩ, 1 W CHIP RESISTOR 0.471” X 0.080” MICROSTRIP 1.082” X 0.080” MICROSTRIP 0.372” X 0.080” MICROSTRIP 0.260” X 0.223” MICROSTRIP 0.050” X 0.080” MICROSTRIP 0.551” X 0.080” MICROSTRIP 0.825” X 0.080” MICROSTRIP 0.489” X 0.080” MICROSTRIP e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o RF OUTPUT ROGER, ULTRA LAM 2000 THK 0.030”, εr = 2.55 2oz. ED cu 2 SIDES. PD55025 - PD55025S 500 MHz TEST CIRCUIT BIAS GND VDD c u d e t le 500 MHz TEST CIRCUIT PHOTOMASTER ) s ( ct ) s t( o r P o s b O - u d o 4 inches r P e t e l o s b O 6.4 inches 7/13 PD55025 - PD55025S 175 MHz TEST CIRCUIT SCHEMATIC (ENGINEERING) FB1 FB2 +V C8 C9 C10 C11 R1 C13 C12 ) GG ) +V C16 R2 C14 C15 L1 R3 C6 RF OUTPUT C1 RF INPUT C2 C3 C4 R5 C5 R4 C7 c u d 175 MHz TEST CIRCUIT COMPONENT PART LIST COMPONENT DESCRIPTION C1, C6 300 pF CHIP CAPACITOR C2, C3 91 pF CHIP CAPACITOR C4, C14 75 pF CHIP CAPACITOR C5 1-20 pF TRIMMER CAPACITOR C7 .01 µF MOLDED CAPACITOR C8, C13 10 µF ELECTROLYTIC CAPACITOR C9, C12 .1 µF CHIP CAPACITOR C10, C11 1000 pF CHIP CAPACITOR ) s ( ct C15, C16 1200 pF CHIP CAPACITOR FB1, FB2 FERRITE BEAD R1 33 KΩ CHIP RESISTOR R2 17 Ω CHIP RESISTOR R4 u d o r P e t e l o R5 L1 bs BOARD 8/13 o s b O - 15 Ω CHIP RESISTOR R3 O e t le o r P 47 Ω CHIP RESISTOR 220 Ω CHIP RESISTOR 5 TURN, 16 AWG MAGNET WIRE, ID = .40” ,INDUCTOR ROGER, ULTRA LAM 2000, THK 0.030”, εr = 2.55 2oz. ED cu 2 SIDES. ) s t( DD PD55025 - PD55025S COMMON SOURCE S-PARAMETER (PD55025S) (VDS = 12.5 V ID = 500 mA) FREQ IS11I S11∠Φ IS21I S21∠Φ IS12I S12∠Φ IS22I S22∠Φ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.837 0.846 0.862 0.878 0.895 0.910 0.921 0.932 0.941 0.946 0.953 0.957 0.960 0.964 0.966 0.968 0.970 0.971 0.972 0.972 -162 -169 -171 -173 -174 -174 -175 -176 -177 -178 -178 -179 -180 180 179 178 178 177 177 176 13.33 6.51 4.15 2.93 2.20 1.71 1.36 1.11 0.92 0.78 0.66 0.57 0.50 0.44 0.39 0.95 0.31 0.28 0.26 0.23 89 76 66 58 51 45 40 35 31 27 24 21 18 16 14 12 10 8 6 5 0.018 0.017 0.016 0.015 0.013 0.012 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.004 0.003 0.002 0.002 0.002 0.002 0.003 -1 -12 -19 -26 -31 -36 -40 -42 -43 -44 -43 -42 -39 -34 -29 -15 -2 16 34 45 0.780 0.803 0.831 0.859 0.874 0.886 0.892 0.897 0.915 0.932 0.946 0.964 0.975 0.976 0.981 0.979 0.964 0.960 0.953 0.940 -168 -172 -172 -172 -172 -173 -173 -175 -176 -177 -178 -179 -178 -179 -179 -179 -179 180 179 178 o s b O - COMMON SOURCE S-PARAMETER (PD55025S) (VDS = 12.5 V ID = 1.5 A) FREQ IS11I S11∠Φ IS21I (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.876 0.880 0.887 0.895 0.905 0.915 0.922 0.931 0.938 0.942 0.948 0.952 0.954 0.959 0.961 0.963 0.966 0.967 0.968 0.968 -164 -172 -174 -175 -176 -176 -177 -178 -178 -179 -179 -180 180 179 178 178 177 177 176 176 13.87 6.87 4.46 3.22 2.47 1.96 1.60 1.32 1.11 0.95 0.82 0.71 0.63 0.55 0.49 0.45 0.40 0.36 0.33 0.30 s b O t e l o d o r P e t c u (s) e t le o r P c u d ) s t( S21∠Φ IS12I S12∠Φ IS22I S22∠Φ 90 79 71 64 58 52 47 42 38 34 31 28 25 22 20 17 15 13 11 9 0.013 0.012 0.012 0.011 0.010 0.009 0.009 0.008 0.007 0.006 0.005 0.005 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 1 -7 -13 -18 -22 -25 -28 -30 -31 -31 -30 -27 -22 -16 -6 3 17 27 38 45 0.823 0.838 0.855 0.873 0.879 0.885 0.886 0.889 0.906 0.923 0.937 0.956 0.967 0.969 0.973 0.970 0.956 0.952 0.945 0.933 -172 -175 -176 -175 -175 -175 -175 -177 -178 -179 -179 -179 -179 -179 -179 -179 -180 179 179 177 9/13 PD55025 - PD55025S COMMON SOURCE S-PARAMETER (PD55025S) (VDS = 12.5 V ID = 3 A) FREQ IS11I S11∠Φ IS21I S21∠Φ IS12I S12∠Φ IS22I S22∠Φ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.890 0.892 0.898 0.904 0.913 0.921 0.926 0.935 0.941 0.944 0.949 0.953 0.955 0.959 0.961 0.963 0.966 0.967 0.968 0.969 -165 -172 -174 -175 -176 -177 -177 -178 -179 -179 -180 180 179 179 178 177 177 176 176 175 13.19 6.55 4.28 3.11 2.39 1.91 1.57 1.31 1.10 0.94 0.82 0.71 0.63 0.56 0.50 0.45 0.41 0.37 0.34 0.31 91 81 73 66 60 54 49 44 40 36 33 29 26 24 21 19 17 15 15 11 0.012 0.011 0.011 0.010 0.010 0.009 0.008 0.007 0.007 0.006 0.005 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.004 2 -6 -12 -15 -20 -23 -25 -27 -28 -27 -25 -21 -17 -10 -2 10 22 32 41 49 0.837 0.846 0.865 0.879 0.883 0.089 0.887 0.889 0.905 0.921 0.936 0.954 0.964 0.965 0.968 0.966 0.952 0.948 0.942 0.930 -174 -176 -176 -176 -176 -176 -176 -177 -179 -179 -180 180 -180 -180 -180 -179 -180 180 179 177 o s b O - COMMON SOURCE S-PARAMETER (PD55025S) (VDS = 13.8 V ID = 3 A) FREQ IS11I S11∠Φ IS21I (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.849 0.881 0.895 0.903 0.912 0.921 0.927 0.936 0.943 0.946 0.952 0.955 0.957 0.961 0.963 0.965 0.968 0.969 0.970 0.971 -164 -171 -173 -175 -176 -176 -177 -178 -178 -179 -180 180 179 179 178 178 177 176 176 175 13.99 6.94 4.51 3.27 2.50 1.99 1.62 1.35 1.13 0.97 0.83 0.72 0.64 0.56 0.50 0.45 0.41 0.37 0.34 0.31 t e l o d o r P e s b O 10/13 t c u (s) e t le o r P c u d ) s t( S21∠Φ IS12I S12∠Φ IS22I S22∠Φ 91 80 72 65 58 52 47 42 38 34 31 27 24 22 19 17 15 13 11 9 0.012 0.011 0.011 0.010 0.010 0.009 0.008 0.007 0.006 0.006 0.005 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 2 -6 -12 -16 -21 -24 -27 -29 -29 -29 -26 -23 -17 -8 2 14 27 36 45 54 0.833 0.841 0.857 0.871 0.877 0.882 0.883 0.886 0.904 0.920 0.935 0.955 0.965 0.967 0.970 0.968 0.953 0.949 0.943 0.930 -173 -175 -175 -175 -175 -175 -176 -177 -178 -179 -179 -180 -179 -179 -179 -179 -179 180 179 178 PD55025 - PD55025S PowerSO-10RF Straight Lead MECHANICAL DATA mm DIM. Inch MIN. TYP. MAX A1 1.62 1.67 1.72 0.064 0.065 0.068 A2 3.4 3.5 3.6 0.134 0.137 0.142 A3 1.2 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012 a MIN. 0.2 TYP. MAX 0.007 D 9.4 9.5 9.6 0.370 0.374 0.377 D1 7.4 7.5 7.6 0.290 0.295 0.298 E 15.15 15.4 15.65 0.595 0.606 0.615 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 E3 F 5.9 6.1 0.5 6.3 0.231 0.24 0.019 ) s t( G c u d 1.2 R1 R2 0.8 T1 6 deg T2 10 deg 0.047 0.25 0.01 0.031 6 deg Note (1): Resin protrusions not included (max value: 0.15 mm per side) ) s ( ct o r P 0.294 0.247 e t le 10 deg o s b O - u d o r P e t e l o s b O CRITICAL DIMENSIONS: - Overall width (L) 11/13 PD55025 - PD55025S PowerSO-10RF Formed Lead (Gull Wing) MECHANICAL DATA mm DIM. Inch MIN. TYP. MAX MIN. TYP. MAX A1 0 0.05 A2 3.4 3.5 0.1 0. 0.0019 0.0038 3.6 0.134 0.137 A3 1.2 0.142 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009 b 5.4 5.53 5.65 0.212 0.217 0.221 c D 0.23 9.4 0.27 9.5 0.32 9.6 0.008 0.370 0.01 0.374 0.012 0.377 a 0.2 0.007 D1 7.4 7.5 7.6 0.290 0.295 0.298 E E1 13.85 9.3 14.1 9.4 14.35 9.5 0.544 0.365 0.555 0.37 0.565 0.375 E2 7.3 7.4 7.5 0.286 0.292 E3 F 5.9 6.1 0.5 6.3 0.231 0.24 0.019 ) s t( 1.1 0.25 0.030 G c u d 1.2 L R1 0.8 R2 1 0.047 0.039 T 0.8 2 deg 5 deg 8 deg 2 deg o s b O - e t le 5 deg 6 deg 10 deg u d o r P e t e l o s b O CRITICAL DIMENSIONS: - Stand-off (A1) - Overall width (L) 12/13 0.042 0.01 0.031 T1 6 deg T2 10 deg Note (1): Resin protrusions not included (max value: 0.15 mm per side) ) s ( ct o r P 0.294 0.247 8 deg PD55025 - PD55025S c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. s b O The ST logo is registered trademark of STMicroelectronics  2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 13/13
PD55025 价格&库存

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