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PD55025S

PD55025S

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    PD55025S - RF POWER TRANSISTORS The LdmoST Plastic FAMILY - STMicroelectronics

  • 数据手册
  • 价格&库存
PD55025S 数据手册
PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD55025 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55025 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55025’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. ORDER CODE PD55025 PowerSO-10RF (formed lead) BRANDING PD55025 PowerSO-10RF (straight lead) ORDER CODE PD55025S BRANDING PD55025S Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 40 ± 20 7 79 165 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 1.2 °C/W March, 21 2003 1/13 PD55025 - PD55025S ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 20 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions VDS = 28 V VDS = 0 V ID = 100 mA ID = 3 A ID = 3 A VDS = 12.5 V VDS = 12.5 V VDS = 12.5 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 86 76 5.8 2.0 0.7 Min. Typ. Max. 1 1 5.0 0.8 Unit µA µA V V mho pF pF pF DYNAMIC Symbol Pout GP ηD Load mismatch Test Conditions VDD = 12.5 V IDQ = 200 mA VDD = 12.5 V IDQ = 200 mA VDD = 12.5 V IDQ = 200 mA VDD = 12.5 V IDQ = 200 mA ALL PHASE ANGLES f = 500 MHz POUT = 25 W f = 500 MHz POUT = 25 W f = 500 MHz POUT = 25 W f = 500 MHz 20:1 Min. 25 14.5 50 Typ. Max. Unit W dB % VSWR PIN CONNECTION D SOURCE ZDL GATE DRAIN Typical Input Impedance Typical Drain Load Impedance G Zin S SC15200 SC13140 IMPEDANCE DATA PD55025S FREQ. MHz 175 480 500 520 2/13 ZIN (Ω) 3.20 - j 4.41 1.01 - j 1.67 0.93 - j 1.53 0.88 - j 1.98 ZDL(Ω) 1.56 + j 2.14 1.06 + j 0.22 1.12 + j 0.20 1.07 + j 0.83 PD55025 - PD55025S TYPICAL PERFORMANCE (PD55025S) Capacitance vs. Supply Voltage 1000 Drain Current vs Gate-Source Voltage 6 Vds = 10 V 5 Cis s 100 Coss Id (A) 3 4 C (pF) 10 2 C rs s f = 1 MHz 1 0 4 8 12 16 20 24 28 Vds (V) 1 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Vgs (V) Gate-Source Voltage vs Case Temperature 1.04 Output Power vs Input Power 45 40 480 MHz 500 MHz 520 MHz 35 1.02 Id = 5 A 30 1.00 Id (A) Id = 4 A Id = 3 A Pout (W) 25 20 15 10 0.98 Id = 2 A Id = 1 A 0.96 Vds = 10 V Id = .5 A 0.94 -25 0 25 Vgs (V) 50 75 100 0 0.00 1.00 2.00 3.00 Pin (W ) 4.00 5 Vdd = 12.5 V Id q = 200 m A 5.00 6.00 Output Power vs Input Power 45 40 35 Vdd = 12.5 V 30 Pout (W) Power Gain vs Output Power 18 16 14 12 Gp (dB) 10 520 MHz 8 6 4 Vdd = 13.8 V 480 MHz 500 MHz 25 20 15 10 5 0 0 1 2 3 Pin (W ) 4 5 6 f = 520 MHz Idq = 200 m A 2 0 0 10 20 P out (W ) 30 Vdd = 12.5 V Idq = 200 m A 40 50 3/13 PD55025 - PD55025S TYPICAL PERFORMANCE (PD55025S) Input Return Loss vs Output Power 0 Vdd = 12.5 V Idq = 200 m A Drain Efficiency vs Output Power 70 60 500 MHz 50 480, 520 MHz RL (dB) -5 -10 -15 480 MHz -20 Nd (%) 40 30 -25 500 MHz 20 -30 520 MHz 10 Vdd = 12.5 V Idq = 200 m A -35 0 0 10 20 Pout (W ) 30 40 50 -40 0 10 20 P out (W ) 30 40 50 Output Power vs Bias Curent 40 Drain Efficiency vs Bias Current 60 35 500 MHz 50 480 MHz 520 MHz 480 MHz 500 MHz 520 MHz 30 40 25 Pout (W) 20 Nd (%) 30 15 20 10 10 5 Vdd = 12.5 V P in = 0.85 W Vdd = 12.5 V P in = 0.85 W 0 1200 0 0 200 400 600 Idq (m A) 800 1000 0 200 400 600 Idq (m A) 800 1000 1200 Output Power vs Supply Voltage 35 480 MHz 30 500 MHz 25 520 MHz Pout (W) Drain Efficiency vs Supply Voltage 70 60 500 MHz 50 500 MHz Nd (%) 20 40 520 MHz 30 15 10 Idq = 200 m A P in = 0.85 W 20 5 10 Idq = 200 m A Pin = 0.85 W 0 19 0 5 7 9 11 13 15 17 Vdd (V) 6 8 10 12 Vdd (V) 14 16 18 4/13 PD55025 - PD55025S TYPICAL PERFORMANCE (PD55025S) Output Power vs Gate-Source Voltage 30 Output Power vs Input Power (f = 175 MHz) 45 40 25 35 20 480 MHz Pout (W) Pout (W) 30 25 20 15 10 15 500 MHz 520 MHz 10 5 Vdd = 12.5 V Pin = 0.85 W 0 0 1 2 Vg s (V ) 3 4 5 0 0 0.5 1 Pin (W ) 1.5 Vdd = 12.5 V Idq = 200 m A 2 2.5 Power Gain vs Output Power (f = 175 MHz) 30 Drain Efficiency vs Output Power (f = 175 MHz) 80 70 25 60 20 50 Gp (W) 15 Nd (%) 40 30 10 20 5 Vdd = 12.5 V Idq = 200 m A 10 Vdd = 12.5 V Idq = 200 m A 0 0 10 20 Pout (W ) 30 40 50 0 0 10 20 P out (W ) 30 40 50 Input Return Loss vs Output Power (f = 175 MHz) 0 -5 -10 RL (dB) -15 -20 -25 V dd = 12.5 V Idq = 200 m A -30 0 10 20 P out (W ) 30 40 50 5/13 PD55025 - PD55025S 500 MHz TEST CIRCUIT SCHEMATIC (ENGINEERING) VGG + + C10 C9 C8 R3 B1 B2 VDD C18 C17 C16 R2 C19 L1 RF INPUT R1 Z1 C1 C2 C3 C4 C5 C6 Z2 Z3 Z4 C7 DUT Z5 Z6 Z7 Z8 Z9 C15 N2 RF OUTPUT C12 C11 C13 C14 500 MHz TEST CIRCUIT COMPONENT PART LIST COMPONENT B1,B2 C1,C13 C2,C3,C4,C12,C13,C14 C6 C7, C19 C10, C16 C9, C17 C8, C18 C5, C11 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4,Z5 Z6 Z7 Z8 Z9 BOARD DESCRIPTION FERRITE BEAD 300 pF, 100 mil CHIP CAPACITOR 1 to 20 pF TRIMMER CAPACITOR 39 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 120 pF 100 mil CHIP CAPACITOR 10 µF, 50 V ELECTROLYTIC CAPACITOR 0.1 mF, 100 mil CHIP CAP 1.000 pF 100 mil CHIP CAP 33 pF, 100 mil CHIP CAP 56 nH, 7 TURN, COILCRAFT TYPE N FLANGE MOUNT 15 Ω, 1 W CHIP RESISTOR 1 KΩ, 1 W CHIP RESISTOR 33 KΩ, 1 W CHIP RESISTOR 0.471” X 0.080” MICROSTRIP 1.082” X 0.080” MICROSTRIP 0.372” X 0.080” MICROSTRIP 0.260” X 0.223” MICROSTRIP 0.050” X 0.080” MICROSTRIP 0.551” X 0.080” MICROSTRIP 0.825” X 0.080” MICROSTRIP 0.489” X 0.080” MICROSTRIP ROGER, ULTRA LAM 2000 THK 0.030”, εr = 2.55 2oz. ED cu 2 SIDES. 6/13 PD55025 - PD55025S 500 MHz TEST CIRCUIT BIAS VDD GND 500 MHz TEST CIRCUIT PHOTOMASTER 6.4 inches 4 inches 7/13 PD55025 - PD55025S 175 MHz TEST CIRCUIT SCHEMATIC (ENGINEERING) +V FB1 GG FB2 C11 C12 C13 +V DD ) R2 C14 C16 C15 L1 R3 C1 RF INPUT C2 C3 R5 R4 C4 C5 C6 RF OUTPUT C7 175 MHz TEST CIRCUIT COMPONENT PART LIST COMPONENT C1, C6 C2, C3 C4, C14 C5 C7 C8, C13 C9, C12 C10, C11 C15, C16 FB1, FB2 R1 R2 R3 R4 R5 L1 BOARD 300 pF CHIP CAPACITOR 91 pF CHIP CAPACITOR 75 pF CHIP CAPACITOR 1-20 pF TRIMMER CAPACITOR .01 µF MOLDED CAPACITOR 10 µF ELECTROLYTIC CAPACITOR .1 µF CHIP CAPACITOR 1000 pF CHIP CAPACITOR 1200 pF CHIP CAPACITOR FERRITE BEAD 33 KΩ CHIP RESISTOR 17 Ω CHIP RESISTOR 15 Ω CHIP RESISTOR 47 Ω CHIP RESISTOR 220 Ω CHIP RESISTOR 5 TURN, 16 AWG MAGNET WIRE, ID = .40” ,INDUCTOR ROGER, ULTRA LAM 2000, THK 0.030”, εr = 2.55 2oz. ED cu 2 SIDES. DESCRIPTION 8/13 ) C8 C9 C10 R1 PD55025 - PD55025S COMMON SOURCE S-PARAMETER (PD55025S) (VDS = 12.5 V ID = 500 mA) FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 IS11I 0.837 0.846 0.862 0.878 0.895 0.910 0.921 0.932 0.941 0.946 0.953 0.957 0.960 0.964 0.966 0.968 0.970 0.971 0.972 0.972 S11∠Φ -162 -169 -171 -173 -174 -174 -175 -176 -177 -178 -178 -179 -180 180 179 178 178 177 177 176 IS21I 13.33 6.51 4.15 2.93 2.20 1.71 1.36 1.11 0.92 0.78 0.66 0.57 0.50 0.44 0.39 0.95 0.31 0.28 0.26 0.23 S21∠Φ 89 76 66 58 51 45 40 35 31 27 24 21 18 16 14 12 10 8 6 5 IS12I 0.018 0.017 0.016 0.015 0.013 0.012 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.004 0.003 0.002 0.002 0.002 0.002 0.003 S12∠Φ -1 -12 -19 -26 -31 -36 -40 -42 -43 -44 -43 -42 -39 -34 -29 -15 -2 16 34 45 IS22I 0.780 0.803 0.831 0.859 0.874 0.886 0.892 0.897 0.915 0.932 0.946 0.964 0.975 0.976 0.981 0.979 0.964 0.960 0.953 0.940 S22∠Φ -168 -172 -172 -172 -172 -173 -173 -175 -176 -177 -178 -179 -178 -179 -179 -179 -179 180 179 178 COMMON SOURCE S-PARAMETER (PD55025S) (VDS = 12.5 V ID = 1.5 A) FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 IS11I 0.876 0.880 0.887 0.895 0.905 0.915 0.922 0.931 0.938 0.942 0.948 0.952 0.954 0.959 0.961 0.963 0.966 0.967 0.968 0.968 S11∠Φ -164 -172 -174 -175 -176 -176 -177 -178 -178 -179 -179 -180 180 179 178 178 177 177 176 176 IS21I 13.87 6.87 4.46 3.22 2.47 1.96 1.60 1.32 1.11 0.95 0.82 0.71 0.63 0.55 0.49 0.45 0.40 0.36 0.33 0.30 S21∠Φ 90 79 71 64 58 52 47 42 38 34 31 28 25 22 20 17 15 13 11 9 IS12I 0.013 0.012 0.012 0.011 0.010 0.009 0.009 0.008 0.007 0.006 0.005 0.005 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 S12∠Φ 1 -7 -13 -18 -22 -25 -28 -30 -31 -31 -30 -27 -22 -16 -6 3 17 27 38 45 IS22I 0.823 0.838 0.855 0.873 0.879 0.885 0.886 0.889 0.906 0.923 0.937 0.956 0.967 0.969 0.973 0.970 0.956 0.952 0.945 0.933 S22∠Φ -172 -175 -176 -175 -175 -175 -175 -177 -178 -179 -179 -179 -179 -179 -179 -179 -180 179 179 177 9/13 PD55025 - PD55025S COMMON SOURCE S-PARAMETER (PD55025S) (VDS = 12.5 V ID = 3 A) FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 IS11I 0.890 0.892 0.898 0.904 0.913 0.921 0.926 0.935 0.941 0.944 0.949 0.953 0.955 0.959 0.961 0.963 0.966 0.967 0.968 0.969 S11∠Φ -165 -172 -174 -175 -176 -177 -177 -178 -179 -179 -180 180 179 179 178 177 177 176 176 175 IS21I 13.19 6.55 4.28 3.11 2.39 1.91 1.57 1.31 1.10 0.94 0.82 0.71 0.63 0.56 0.50 0.45 0.41 0.37 0.34 0.31 S21∠Φ 91 81 73 66 60 54 49 44 40 36 33 29 26 24 21 19 17 15 15 11 IS12I 0.012 0.011 0.011 0.010 0.010 0.009 0.008 0.007 0.007 0.006 0.005 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.004 S12∠Φ 2 -6 -12 -15 -20 -23 -25 -27 -28 -27 -25 -21 -17 -10 -2 10 22 32 41 49 IS22I 0.837 0.846 0.865 0.879 0.883 0.089 0.887 0.889 0.905 0.921 0.936 0.954 0.964 0.965 0.968 0.966 0.952 0.948 0.942 0.930 S22∠Φ -174 -176 -176 -176 -176 -176 -176 -177 -179 -179 -180 180 -180 -180 -180 -179 -180 180 179 177 COMMON SOURCE S-PARAMETER (PD55025S) (VDS = 13.8 V ID = 3 A) FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 IS11I 0.849 0.881 0.895 0.903 0.912 0.921 0.927 0.936 0.943 0.946 0.952 0.955 0.957 0.961 0.963 0.965 0.968 0.969 0.970 0.971 S11∠Φ -164 -171 -173 -175 -176 -176 -177 -178 -178 -179 -180 180 179 179 178 178 177 176 176 175 IS21I 13.99 6.94 4.51 3.27 2.50 1.99 1.62 1.35 1.13 0.97 0.83 0.72 0.64 0.56 0.50 0.45 0.41 0.37 0.34 0.31 S21∠Φ 91 80 72 65 58 52 47 42 38 34 31 27 24 22 19 17 15 13 11 9 IS12I 0.012 0.011 0.011 0.010 0.010 0.009 0.008 0.007 0.006 0.006 0.005 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 S12∠Φ 2 -6 -12 -16 -21 -24 -27 -29 -29 -29 -26 -23 -17 -8 2 14 27 36 45 54 IS22I 0.833 0.841 0.857 0.871 0.877 0.882 0.883 0.886 0.904 0.920 0.935 0.955 0.965 0.967 0.970 0.968 0.953 0.949 0.943 0.930 S22∠Φ -173 -175 -175 -175 -175 -175 -176 -177 -178 -179 -179 -180 -179 -179 -179 -179 -179 180 179 178 10/13 PD55025 - PD55025S PowerSO-10RF Straight Lead MECHANICAL DATA DIM. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G R1 R2 T1 T2 5.4 0.23 9.4 7.4 15.15 9.3 7.3 5.9 mm MIN. 1.62 3.4 1.2 0.15 TYP. 1.67 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 15.4 9.4 7.4 6.1 0.5 1.2 0.25 0.8 6 deg 10 deg 0.031 6 deg 10 deg 5.65 0.32 9.6 7.6 15.65 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.595 0.365 0.286 0.231 MAX 1.72 3.6 1.4 0.25 MIN. 0.064 0.134 0.046 0.005 Inch TYP. 0.065 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.606 0.37 0.292 0.24 0.019 0.047 0.01 0.221 0.012 0.377 0.298 0.615 0.375 0.294 0.247 MAX 0.068 0.142 0.054 0.009 Note (1): Resin protrusions not included (max value: 0.15 mm per side) CRITICAL DIMENSIONS: - Overall width (L) 11/13 PD55025 - PD55025S PowerSO-10RF Formed Lead (Gull Wing) MECHANICAL DATA DIM. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G L R1 R2 T 2 deg 0.8 5.4 0.23 9.4 7.4 13.85 9.3 7.3 5.9 mm MIN. 0 3.4 1.2 0.15 TYP. 0.05 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 14.1 9.4 7.4 6.1 0.5 1.2 1 0.8 5 deg 8 deg 2 deg 1.1 0.25 0.030 5.65 0.32 9.6 7.6 14.35 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.544 0.365 0.286 0.231 MAX 0.1 3.6 1.4 0.25 MIN. 0. 0.134 0.046 0.005 Inch TYP. 0.0019 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.555 0.37 0.292 0.24 0.019 0.047 0.039 0.031 5 deg 6 deg 10 deg 8 deg 0.042 0.01 0.221 0.012 0.377 0.298 0.565 0.375 0.294 0.247 MAX 0.0038 0.142 0.054 0.009 T1 6 deg T2 10 deg Note (1): Resin protrusions not included (max value: 0.15 mm per side) CRITICAL DIMENSIONS: - Stand-off (A1) - Overall width (L) 12/13 PD55025 - PD55025S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http ://www.st.com 13/13
PD55025S 价格&库存

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