PD57018S

PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W with 14 dB gain @ 960 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57018 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28V in common source mode at frequencies of up to 1GHz. PD57018 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57018’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PD57018 XPD57018 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57018S XPD57018S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature 0 Value 65 ±20 2.5 31.7 165 -65 to 175 Unit V V A W 0C 0C THERMAL DATA (TCASE = 70 0C) R th(j-c) Jun 2000 Junction-Case Thermal Resistance 3.0 0C/W 1/4 PD57018 PD57018S ELECTRICAL SPECIFICATION (TCASE = 25 0C) STATIC Symbol V(BR)DSS IDSS IGSS V GS(Q) VDS(ON) gFS C ISS COSS C RSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Parameter IDS = 10 mA VDS = 28 V VDS = 0 V ID = 50 mA ID = 1 A ID = 1 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 36 19 0.9 2.0 0.3 Min. 65 1 1 5.0 Typ. Max. Unit V µA µA V V mho pF pF pF DYNAMIC Symbol POUT GPS ηD LOAD Mismatch VDD = 28 V VDD = 28 V VDD = 28 V f = 960 MHz f = 960 MHz f = 960 MHz Parameter IDQ = 50 mA POUT = 18 W POUT = 18 W POUT = 18 W IDQ = 50 mA IDQ = 50 mA IDQ = 50 mA Min. 18 14 50 10:1 15 60 Typ. Max. Unit W dB % VSWR VDD = 2 V f = 960 MHz ALL PHASE ANGLES PIN CONNECTION SOURCE GATE DRAIN SC15200 2/4 PD57018 PD57018S PowerSO-10RF (Straight Lead) MECHANICAL DATA PowerSO-10RF (Formed Lead) MECHANICAL DATA 3/4 PD57018 PD57018S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4