PD57045-E

PD57045-E PD57045S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 13dB gain @ 945 MHz / 28 V ■ New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). PowerSO-10RF (straight lead) Figure 1. Pin connection Source Drain Gate Table 1. June 2010 Device summary Order code Package Packing PD57045-E PowerSO-10RF (formed lead) Tube PD57045S-E PowerSO-10RF (straight lead) Tube PD57045TR-E PowerSO-10RF (formed lead) Tape and reel PD57045STR-E PowerSO-10RF (straight lead) Tape and reel Doc ID 12616 Rev 2 1/20 www.st.com 20 Contents PD57045-E, PD57045S-E Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.1 PD57045S-E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2/20 Doc ID 12616 Rev 2 PD57045-E, PD57045S-E Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25°C) Symbol Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage ± 20 V Drain Current 5 A Power Dissipation (@ Tc = 70°C) 73 W Max. Operating Junction Temperature 165 °C -65 to +150 °C Value Unit 1.2 °C/W ID PDISS TJ TSTG 1.2 Parameter Storage Temperature Thermal data Table 3. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Doc ID 12616 Rev 2 3/20 Electrical characteristics 2 PD57045-E, PD57045S-E Electrical characteristics TCASE = +25 oC 2.1 Static Table 4. Static Symbol 2.2 Test conditions Min Unit VGS = 0 IDS = 1 mA IDSS VGS = 0 VDS = 28 V 1 µA IGSS VGS = 20 V VDS = 0 1 µA VGS(Q) VDS = 28 V ID = 250 mA 5.0 V VDS(ON) VGS = 10 V ID = 3 A 0.9 V gFS VDS = 10 V ID = 4 A CISS VGS = 0 VDS = 28 V COSS VGS = 0 CRSS VGS = 0 65 V 2.0 0.7 2.0 2.7 mho f = 1 MHz 86 pF VDS = 28 V f = 1 MHz 47 pF VDS = 28 V f = 1 MHz 3.6 pF Dynamic Symbol Dynamic Test conditions Min. Typ. Max. Unit P1dB VDD = 28 V IDQ = 250 mA f = 945 MHz 45 GP VDD = 28 V IDQ = 250 mA POUT = 45 W f = 945 MHz 13 ηD VDD = 28 V IDQ = 250 mA POUT = 45 W f = 945 MHz 50 % 10:1 VSWR Load VDD = 28 V IDQ = 250 mA POUT = 45 W f = 945 MHz mismatch All phase angles W 14.5 dB Moisture sensitivity level Table 6. 4/20 Max V(BR)DSS Table 5. 2.3 Typ Moisture sensitivity level Test methodology Rating J-STD-020B MSL 3 Doc ID 12616 Rev 2 PD57045-E, PD57045S-E 3 Impedance Impedance Figure 2. Current conventions Table 7. Impedance data Freq. (MHz) ZIN (Ω) ZDL(Ω) 925 .71 + j 2.32 1.29 - j .35 945 .69 + j 2.92 1.25 - j .29 960 .55 + j 2.78 1.18 - j .83 Doc ID 12616 Rev 2 5/20 Typical performance PD57045-E, PD57045S-E 4 Typical performance Figure 3. Capacitance vs drain voltage Figure 4. Drain current vs gate voltage C (pF) 4 1000 ID, DRAIN CURRENT (A) 3.5 C is s 100 Coss 10 C rs s Vds= 10 V 3 2.5 2 1.5 1 0.5 f= 1 M H z 1 0 5 10 15 20 25 30 0 2.5 VDS (V) Figure 5. 3 3.5 4 4.5 5 VGS, GATE-SOURCE VOLTAGE (V) Gate-source voltage vs case temperature Figure 6. Safe operating area VGS, GATE-SOURCE VOLTAGE (NORMALIZED) Id (A) 10 1.04 Tc = 2 5 1.02 Tc = 1 0 0 ID = 3A Tc = 7 0 D ID = 1.5 A ID = 1 A 0.98 VDS = 10 V Tj = 165 C ID = .25 A 0.1 0.96 -25 1 0 25 50 75 Tc, CASE TEMPERATURE (°C) 6/20 C 1 I = 2A 1 C C Doc ID 12616 Rev 2 10 Vds (V) 100 PD57045-E, PD57045S-E Typical performance 4.1 PD57045S-E Figure 7. Output power vs input power 60 16 40 14 30 13 20 12 VDD = 28 V IDQ = 250 mA f = 945 MHz 10 0.5 1 1.5 2 2.5 -10 -20 -30 f = 945 MHz Vdd = 28 V Idq = 250 mA 11 0 0 Rtl, RETURN LOSS (dB) 15 Gp, POWER GAIN (dB) 50 10 3.5 3 Input return loss vs output power 0 Pout Gp Pout, OUTPUT POWER (W) Figure 8. -40 0 10 Pin, INPUT POWER (W) Figure 9. 20 30 40 50 60 Pout, OUTPUT POWER (W) Power gain vs output power Figure 10. Drain efficiency vs output power 17 60 Idq = 450 mA Nd, DRAIN EFFICIENCY (%) Gp, POWER GAIN (dB) 16 Idq = 250 mA 15 Idq = 150 mA 14 13 12 Idq = 75 mA Vdd = 28 V f = 945 Mhz 11 50 40 30 20 f = 945 MHz Vdd = 28 V Idq = 250 mA 10 0 10 0.1 1 10 100 0 10 20 30 40 50 60 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Doc ID 12616 Rev 2 7/20 Typical performance PD57045-E, PD57045S-E Figure 11. Output power vs bias curren Figure 12. Drain efficiency vs bias current 70 Nd, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (W) 60 50 40 30 Pin = 1.5 W Vdd = 28 V f = 945 MHz 20 0 200 400 600 800 60 50 40 30 1000 0 Idq, BIAS CURRENT (mA) 200 400 600 800 Figure 14. Output power vs gate bias voltage 80 50 60 Pin = 2 W Pin = 1.5 W 50 40 Pin = 1 W 30 Pout, OUTPUT POWER (W) Pin =3 W f = 945 MHz Vdd = 28 V Idq = 250 mA 70 40 30 20 Pin = 1.5 W Vdd = 28 V f = 945 MHz 10 20 0 10 16 18 20 22 24 26 28 30 32 34 0 VDS, DRAIN-SOURCE VOLTAGE (V) 8/20 1000 Idq, BIAS CURRENT (mA) Figure 13. Output power vs drain voltage Pout, OUTPUT POWER (W) Pin = 1.5 W Vdd = 28 V f = 945 MHz Doc ID 12616 Rev 2 0.5 1 1.5 2 2.5 3 VGS, GATE BIAS VOLTAGE (V) 3.5 4 PD57045-E, PD57045S-E 5 Test circuit Test circuit Figure 15. Test circuit schematic =* *   5) , 1 Note: =' '   5) 2