PD57045S

PD57045 PD57045S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57045 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28V in common source mode at frequencies of up to 1GHz. PD57045 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57045’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PD57045 XPD57045 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57045S XPD57045S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature 0 Value 65 ±20 5 73 165 -65 to 165 Unit V V A W 0C 0 C THERMAL DATA (TCASE = 70 0C) R th(j-c) May 2000 Junction-Case Thermal Resistance 1.3 0 C/W 1/8 PD57045 PD57045S ELECTRICAL SPECIFICATION (TCASE = 25 0C) STATIC Symbol V(BR)DSS IDSS IGSS V GS(Q) VDS(ON) gFS C ISS COSS C RSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Parameter IDS = 1 mA VDS = 28 V VDS = 0 V ID = 250 mA ID = 3 A ID = 5 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 2.0 0.7 2.7 86 47 3.6 Min. 65 1 1 5.0 0.9 Typ. Max. Unit V µA µA V V mho pF pF pF DYNAMIC Symbol POUT GPS ηD LOAD Mismatch VDD = 28 V VDD = 28 V VDD = 28 V f = 945 MHz f = 945 MHz f = 945 MHz Parameter IDQ = 250 mA POUT = 45 W POUT = 45 W POUT = 45 W IDQ = 250 mA IDQ = 250 mA IDQ = 250 mA Min. 45 13 50 10:1 14.5 Typ. Max. Unit W dB % VSWR VDD = 28 V f = 945 MHz ALL PHASE ANGLES D PIN CONNECTION SOURCE ZDL Typical Input Impedance Typical Drain Load Impedance GATE DRAIN G Zin S SC15200 SC13140 IMPEDANCE DATA PD57045S Frequency MHz 945 Zin Ω Zdl Ω .80 + j 1.24 1.66 - j.44 2/8 PD57045 PD57045S TYPICAL PERFORMANCE Capacitance vs. Drain Voltage 1000 Drain Current vs. Gate Voltage 4 3.5 f=1 MHz ID, DRAIN CURRENT (A) Vds=10V 3 2.5 2 1.5 1 0.5 C, CAPACITANCE (pF) 100 Ciss Coss 10 Crss 1 0 10 20 30 40 50 0 2.5 3 3.5 4 4.5 5 VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V) Gate-Source Voltage vs. Case Temperature VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 1.04 1.02 ID =3A 1 ID =2A ID =1.5A 0.98 VDS =10 V ID =1 A ID =.25A 0.96 -25 0 25 50 75 Tc, CASE TEMPERATURE (°C) 3/8 PD57045 PD57045S TYPICAL PERFORMANCE - PD57045S Output Power and Power Gain vs. Input Power 60 Gp Pout Power Gain vs. Output Power 17 Idq= 450mA 16 Pout, OUTPUT POWER (W) 50 15 16 Gp, POWER GAIN (dB) Gp, POWER GAIN (dB) 15 14 Idq= 250mA 40 14 Idq= 150mA 30 13 13 12 Idq= 75mA Vdd= 28V f= 945Mhz 20 VDD =28 V IDQ =250 mA f= 945 MHz 12 10 11 11 10 0.1 1 10 0 0 0.5 1 1.5 2 2.5 3 10 3.5 100 Pin, INPUT POWER (W) Pout, OUTPUT POWER (W) Drain Efficiency vs. Output Power 60 Return Loss vs. Output Power 0 Nd, DRAIN EFFICIENCY (%) 50 Rtl, RETURN LOSS (dB) -10 40 30 -20 20 f= 945MHz Vdd=28V Idq=250mA -30 f= 945 MHz Vdd= 28V Idq=250mA -40 10 0 0 10 20 30 40 50 60 0 10 20 30 40 50 60 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Output Power vs. Bias Current 60 Drain Efficiency vs. Bias Current 70 Pout, OUTPUT POWER (W) 50 Nd, DRAIN EFFICIENCY (%) 60 40 50 30 Pin=1.5W Vdd= 28V f= 945 MHz 40 Pin= 1.5W Vdd= 28V f=945 MHz 20 0 200 400 600 800 1000 30 0 200 400 600 800 1000 Idq, BIAS CURRENT (mA) Idq, BIAS CURRENT (mA) 4/8 PD57045 PD57045S TYPICAL PERFORMANCE PD57045S Output Power vs. Drain Voltage 80 70 Pin=3W f=945MHz Vdd= 28V Idq=250mA Output Power vs. Gate Bias Voltage 50 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 40 60 50 Pin= 2W Pin= 1.5W 30 40 30 20 10 16 18 20 22 24 26 28 30 Pin= 1W 20 10 Pin= 1.5W Vdd= 28V f=945MHz 0 32 34 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE BIAS VOLTAGE (V) TEST CIRCUIT PHOTOMASTER 6.4 inches 4 inches 5/8 PD57045 PD57045S TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST L1 L2 FB1 FB2 R1 R2 R3 C1 C2 C3 C4 C5 INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=0.059{1.49}, NYLON COATED MAGNET WIRE INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=0.059{1.49}, NYLON COATED MAGNET WIRE SHIELD BEAD SURFACE MOUNT EMI SHIELD BEAD SURFACE MOUNT EMI 18K OHM, 1W SURFACE MOUNT CHIP RESISTOR 4.7M OHM, 1W SURFACE MOUNT CHIP RESISTOR 120 OHM,2W SURFACE MOUNT CHIP RESISTOR 3pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 3pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR 7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR 47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 1000pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.1µF/500V SURFACE MOUNT CERAMIC CHIP CAPACITOR 10µF/50V ALUMINNUM ELECTROLYTIC RADIAL LEAD CAPACITOR 47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 100pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.1µF/500V SURFACE MOUNT CERAMIC CHIP CAPACITOR 220µF/63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR ROGER, ULTRA LAM 2000 THK 0.030” Cu 2 SIDES C6 Board εr = 2.55 2oz ED 6/8 PD57045 PD57045S PowerSO-10RF (Straight Lead) MECHANICAL DATA PowerSO-10RF (Formed Lead) MECHANICAL DATA 7/8 PD57045 PD57045S Information furnished is believed to be accurate and reliable. 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