PD57060S-E

PD57060S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 14.3dB gain@ 945 MHz/28 V ■ New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optmized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). PowerSO-10RF (straight lead) Figure 1. Pin connection Source Drain Gate Table 1. June 2010 Device summary Order code Package Packing PD57060-E PowerSO-10RF (formed lead) Tube PD57060S-E PowerSO-10RF (straight lead) Tube PD57060TR-E PowerSO-10RF (formed lead) Tape and reel PD57060STR-E PowerSO-10RF (straight lead) Tape and reel Doc ID 11758 Rev 4 1/21 www.st.com 21 Contents PD57060-E Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 Doc ID 11758 Rev 4 PD57060-E Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25°C) Symbol Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage ± 20 V Drain Current 7 A Power Dissipation (@ Tc = 70°C) 79 W Max. Operating Junction Temperature 165 °C -65 to +150 °C Value Unit 1.0 °C/W ID PDISS TJ TSTG 1.2 Parameter Storage Temperature Thermal data Table 3. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Doc ID 11758 Rev 4 3/21 Electrical characteristics 2 PD57060-E Electrical characteristics TCASE = +25 oC 2.1 Static Table 4. Static Symbol 2.2 Test conditions Max Unit VGS = 0 IDS = 1 mA IDSS VGS = 0 VDS = 28 V 1 µA IGSS VGS = 20 V VDS = 0 V 1 µA VGS(Q) VDS = 28 V ID = 100 mA 4.0 V VDS(ON) VGS = 10 V ID = 3 A 0.8 V GFS VDS = 10 V ID = 3 A CISS VGS = 0 VDS = 28 V f = 1 MHz 83 pF COSS VGS = 0 VDS = 28 V f = 1 MHz 58 pF CRSS VGS = 0 VDS = 28 V f = 1 MHz 3 pF 65 V 2.0 0.7 2.5 mho Dynamic Dynamic Symbol Test conditions Min Typ Max Unit POUT VDD = 28 V IDQ = 100 mA f = 945MHz GPS VDD = 28 V IDQ = 100 mA POUT = 60 W f = 945MHz 14.3 dB ηD VDD = 28 V IDQ = 100 mA POUT = 60 W f = 945MHz 54 % VDD = 28 V IDQ = 100 mA POUT = 60W Load Mismatch All Phase Angles f = 945MHz 60 5:1 W VSWR Moisture sensitivity level Table 6. 4/21 Typ V(BR)DSS Table 5. 2.3 Min Moisture sensitivity level Test methodology Rating J-STD-020B MSL 3 Doc ID 11758 Rev 4 PD57060-E 3 Impedances Impedances Figure 2. Current conventions Table 7. Impedance data Freq. (MHz) ZIN (Ω) ZDL(Ω) 890 MHz 0.646 + j 0.694 1.577 - j 0.997 925 MHz 0.568 + j 0.372 1.427 - j 1.459 945 MHz 0.705 + j 0.692 1.278 - j 1.935 960 MHz 0.591 + j 1.039 1.173 - j 2.464 Doc ID 11758 Rev 4 5/21 Typical performance PD57060-E 4 Typical performance Figure 3. Capacitance vs supply voltage Figure 4. C (pF) Id (A) 1000 8 Drain current vs gate source voltage 7 6 Ciss 100 5 Coss 4 3 10 Crss 2 1 VDS=10 V f = 1 MHz 1 0 0 5 10 15 20 25 30 2 2.5 3 3.5 VDS (V) Figure 5. 4 4.5 5 5.5 6 VGS (V) Gate-source voltage vs case temperature Figure 6. VGS (Normalized) Pout (W) 1.06 80 Output power vs input power 945MHz 70 1.04 890MHz 925MHz 60 1.02 960MHz Id = 5 A 50 1 Id = 4 A 40 Id = 3 A 0.98 30 Id = 2 A 0.96 20 Id = 1 A Id = 0.5 A 0.94 10 VDS=28V IDQ=100mA VDS = 10 V 0.92 0 -25 0 25 50 75 100 0 Tc (°C) 6/21 0.5 1 1.5 2 Pin (W) Doc ID 11758 Rev 4 2.5 3 3.5 4 PD57060-E Figure 7. Typical performance Power gain vs output power Figure 8. Gp (dB) Nd (%) 18 70 16 Drain efficiency vs output power 925MHz 890MHz 925MHz 945MHz 945MHz 60 14 960MHz 12 960MHz 890MHz 50 10 40 8 6 30 4 VDS=28V IDQ=100mA VDS=28V IDQ=100mA 2 20 0 10 20 30 40 50 60 70 80 0 10 20 30 Pout (W) Figure 9. 40 50 60 70 80 Pout (W) Input return loss vs output power RL (dB) Figure 10. Output power vs bias current Pout (W) 0 80 925MHz 70 890MHz 890MHz -10 60 960MHz 945MHz 960MHz 50 925MHz -20 40 945MHz 30 -30 20 Pin=32.8dBm VDS=28V VDS=28V IDQ=100mA -40 10 0 10 20 30 40 50 60 70 80 0 Pout (W) 0.5 1 1.5 2 2.5 IDQ (A) Doc ID 11758 Rev 4 7/21 Typical performance PD57060-E Figure 11. Drain efficiency vs bias current Figure 12. Output power vs supply voltage Nd (%) Pout (W) 70 70 945MHz 60 890MHz 60 945MHz 925MHz 890MHz 50 960MHz 50 960MHz 925MHz 40 40 30 30 20 20 Pin=32.8dBm IDQ=100mA Pin=32.8dBm VDS=28V 10 10 0 0.5 1 1.5 2 2.5 10 15 20 IDQ (A) Figure 13. Drain efficiency vs supply voltage 30 Figure 14. Output power vs gate-source voltage Nd (%) Pout (W) 70 80 925MHz 945MHz 890MHz 60 25 VDS (V) 70 890MHz 60 925MHz 50 9455MHz 960MHz 960MHz 50 40 40 30 30 20 Pin=32.8dBm VDS=28v 20 Pin=32.8dBm IDQ=100mA 10 10 10 15 20 25 30 0 VDS (V) 8/21 1 2 3 VGS (V) Doc ID 11758 Rev 4 4 5 PD57060-E 5 Test circuit Test circuit Figure 15. Test circuit schematic =* *   5) , 1 Note: =' '   5) 2