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PD85035C

PD85035C

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    M243

  • 描述:

    FET RF 40V 945MHZ M243

  • 数据手册
  • 价格&库存
PD85035C 数据手册
PD85035C RF power transistor - LdmoST family Preliminary Data Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V BeO-free ceramic package ESD protection In compliance with the 2002/95/EC european directive M243 Epoxy sealed Description The PD85035C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85035C’s superior linearity performance makes it an ideal solution for car mobile radio. Figure 1. Pin connection 1 3 2 1. Drain 2. Gate 3. Source Table 1. Device summary Order code PD85035C Package M243 Packing Box November 2007 Rev 1 1/10 www.st.com 10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents PD85035C Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 2.3 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 4 5 6 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 PD85035C Electrical data 1 1.1 Electrical data Maximum ratings Table 2. Symbol V(BR)DSS VGS ID PDISS TJ TSTG Absolute maximum ratings (TCASE = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70 °C) Max. operating junction temperature Storage temperature Value 40 -0.5 to +15 8 108 200 -65 to +150 Unit V V A W °C °C 1.2 Thermal data Table 3. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Value 1.2 Unit °C/W 3/10 Electrical characteristics PD85035C 2 Electrical characteristics TCASE = +25 oC 2.1 Static Table 4. Symbol IDSS IGSS VGS(Q) VDS(ON) CISS COSS CRSS VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Static Test conditions VDS = 25 V VDS = 0 V ID = TBD ID = 3 A VDS = 12.5 V VDS = 12.5 V VDS = 12.5 V f = 1 MHz f = 1 MHz f = 1 MHz TBD 0.64 76 45 1.4 0.7 Min Typ Max 1 1 Unit µA µA V V pF pF pF 2.2 Dynamic Table 5. Symbol P3dB GP hD Dynamic Test conditions VDD = 13.6 V, IDQ = 350 mA f = 945 MHz Min 35 15 60 20:1 17.5 77 Typ Max Unit W dB % VSWR VDD = 13.6 V, IDQ = 350 mA, POUT = 15W, f = 945 MHz VDD = 13.6 V, IDQ = 350 mA, POUT = P3dB, f = 945 MHz Load VDD = 17 V, IDQ = 350 mA, POUT = 50W, f = 945 MHz mismatch All phase angles 2.3 ESD protection characteristics Table 6. ESD protection characteristics Test conditions Human body model Machine model Class 2 M3 4/10 PD85035C Impedance 3 Impedance Figure 2. Current conventions Table 7. Impedance data Freq. (MHz) 945 MHz ZIN (Ω) 1.08 +j 2.05 ZDL(Ω) 2.14 + j 2.17 5/10 Typical performance PD85035C 4 Figure 3. 160 Typical performance Capacitances vs drain voltage p g Crss 140 120 100 80 60 40 20 0 0 10 20 Figure 4. Coss ID vs VGS Ciss Capacitances (pF) Freq = 1 MHz Vdd (V) 30 40 50 Figure 5. Threshold voltage g Figure 6. DC output characteristic 6/10 PD85035C Figure 7. 24 22 20 Gain (dB) 18 16 14 12 10 0 5 10 15 20 25 30 35 40 45 50 Pout (W) Typical performance Gain vs output power and bias current 150mA 250mA 350mA 500mA Figure 8. 50 45 40 35 Pout and efficiency vs input power y Pout p Nd p 100 90 80 70 Pout (W) 25 20 15 50 40 30 Freq = 945 MHz Vdd = 13.6V 10 5 0 0.0 0.5 1.0 1.5 Freq = 945 MHz Vdd = 13.6V Idq = 350mA 2.0 2.5 20 10 0 3.0 Pin (W) Figure 9. 60 Pout and drain current vs supply voltage pp y 6 5 4 Figure 10. Pout and drain current vs gate voltage 50 45 40 35 50 40 Pout Id Freq = 945 MHz Pin = 0.4W Vdd = 13.6V Idq = 350mA 5 4 Pout (W) Pout (W) Id (A) 30 25 20 15 3 30 20 3 2 2 10 0 7 10 13 Freq = 945 MHz Pin = 1.2W Idq = 350mA 16 19 1 0 10 5 0 0 1 2 3 4 1 Pout 5 Id 6 0 Vdd (V) Vgs (V) 7/10 Id (A) Nd (%) 30 60 Package mechanical data PD85035C 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com Table 8. Dim. Min A B C D E F G H I J 20.07 8.89 0.10 3.18 1.83 1.27 5.21 5.46 5.59 14.27 20.57 9.40 0.15 4.45 2.24 1.78 0.790 0.350 0.004 0.125 0.072 0.050 M243 (.230 x .360 2L N/HERM W/FLG) mechanical data mm Typ Max 5.72 6.48 6.10 Min 0.205 0.215 0.220 0.562 0.810 0.370 0.006 0.175 0.088 0.070 Inch Typ Max 0.225 0.255 0.240 Figure 11. Package dimensions Controlling dimension: Inches 8/10 1022142E PD85035C Revision history 6 Revision history Table 9. Date 16-Nov-2007 Document revision history Revision 1 Initial release. Changes 9/10 PD85035C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10
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