PKC-136

PKC-136 ® Application Specific Discretes ASD™ PEAK CLAMP MAIN PRODUCT CHARACTERISTICS VBR VDRM P 160Vdc 700Vdc 1.5W FEATURES Protection of the Mosfet in flyback power supply TRANSIL™ and blocking diode in a single package ■ ■ BENEFITS Accurate voltage clamping regardless load Reduced current loop Reduced EMI emission High integration Fast assembly Reduced losses in stand by mode ■ ■ ■ ■ ■ DO-15 ■ BASIC CONNECTION Lf T Io Vo D ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Parameter Value Unit Tstg Storage temperature - 40 to + 150 °C Tj Junction temperature 150 °C P Maximum power dissipation T°lead = 90°C 1.5 W August 2001 - Ed: 2A 1/5 PKC-136 ELECTRICAL CHARACTERISTICS TRANSIL Value Symbol Parameter Test conditions Unit Min. IRM Leakage current VR = 136V VBR Breakdown voltage IR = 1mA pulse test < 50ms Rd Dynamical Resistance tp < 500ns between I = 0.5Amps and I = 1.5Amps αT VsCL Tj = 25°C Tj =125°C Tj = 25°C 150 Typ. Max. µA 160 1 10 170 4 Ω 10.8 10-4/°C 219 V Tj = 125°C Temperature Coefficient Surge Clamping voltage Ipp = 2.7Amps 10/1000µs V CALCULATION OF THE CLAMPING VOLTAGE: In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown voltage VBR of the transil versus the operating junction temperature and use the equation (3) to calculate the clamping voltage versus the transil current Ipp and the temperature. ∆V BR = αT (Tj − 25 )V BR ( 25 °C ) (1) V BR (Tj ) = V BR ( 25 °C ) + ∆V BR (2) V CL (Tj ) = V BR (Tj ) + Rd .Ipp (3) ELECTRICAL CHARACTERISTICS DIODE (Tj = 25°C unless otherwise specified) Symbol Parameter Tests conditions IR Reverse leakage current VR = VRRM Value Min. Typ. Tj = 25°C 3 Tj = 125°C Max. 3 Unit µA 20 700 V VRRM Repetitive Peak Reverse Voltage Tj = 25°C trr Reverse Recovery Time IF = 1A dIF / dt = -50A/µs VR = 30V 45 ns Peak Forward Voltage IF = 3A dIF / dt = 100A/µs Tj = 25°C 12 V Tj = 125°C 18 VFP CAPACITANCE Symbol C 2/5 Parameter Total Parasitic capacitance 1MHz 30mV Typical Value Unit 35 pF PKC-136 THERMAL RESISTANCES Symbol Parameter Rth(j-l) Junction to leads Rth(j-a) Junction to ambiant condition see note 1 L = 10mm Value Unit 40 °C/W 105 °C/W Note 1: Device mounted on a epoxy FR4 board of 35µm thickness Lead Length: 10mm Pad diameter: 4mm Track width: 1mm Track length: 25mm The Rth(j-a) can be reduced by replacing the Cu track by plan: S(Cu) = 1.5cm2/lead Rth(j-a) = 65°C/W S(Cu) = 3.5cm2/lead Rth(j-a) = 60°C/W Fig. 1: Peak pulse power versus exponential pulse duration. Fig. 2: Relative variation of peak pulse power versus initial junction temperature. Pp(kW) % 110 1.E+02 Tj initial=25°C 100 90 80 1.E+01 70 60 50 40 1.E+00 30 20 10 tp(ms) Tj(°C) 0 1.E-01 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Fig. 3: Average power dissipation versus ambient temperature. 0 25 50 75 100 125 150 175 Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration (printed circuit board epoxy FR4) P(W) Zth(j-a) (°C/W) 1.8 1000.0 Free air 1.6 Tamb =Tleads 1.4 1.2 100.0 1.0 0.8 Printed circuit board 0.6 10.0 0.4 0.2 tp(s) Tamb(°C) 0.0 1.0 0 25 50 75 100 125 150 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 3/5 PKC-136 Fig. 5: Thermal resistance junction to ambient versus copper surface under each lead. Fig. 6-1: Reverse leakage current versus reverse voltage applied (typical values, for Transil). Rth(j-a) IR(µA) 110 1.E+00 Lleads=10mm 100 Tj=150°C 90 1.E-01 Tj=125°C 80 1.E-02 70 Tj=100°C 60 1.E-03 50 40 1.E-04 Tj=25°C 30 20 1.E-05 S(cm²) 10 VR(V) 0 1.E-06 0 1 2 3 4 5 6 7 8 9 10 Fig. 6-2: Reverse leakage current versus reverse voltage applied (typical values, for diode). 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Fig. 7: Transient peak forward voltage versus dIF/dt (90% confidence). IR(µA) VFP(V) 1.E+02 50 IF=3A Tj=125°C 45 Tj=150°C 1.E+01 40 Tj=125°C 1.E+00 35 30 Tj=100°C 25 1.E-01 20 15 Tj=25°C 1.E-02 10 5 VR(V) 1.E-03 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 Fig. 8: Clamping voltage versus peak pulse current (maximum values). 0 50 100 150 200 250 300 350 400 450 500 Fig. 9: Junction capacitance versus reverse voltage applied on clamping characteristic (typical values). C(pF) Ipp(A) 10.0 100 F=1MHz Vosc=30mVRMS Tj=25°C tp