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RBO40-40M

RBO40-40M

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    RBO40-40M - REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO - STMicroelectronics

  • 数据手册
  • 价格&库存
RBO40-40M 数据手册
® RBO40-40G/M/T REVERSEDBATTERYAND Application Specific Discretes A.S.D.TM OVERVOLTAGEPROTECTIONCIRCUIT (RBO) FEATURES PROTECTION AGAINST ”LOAD DUMP” PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min. CLAMPING VOLTAGE : ± 40 V max. COMPLIANT WITH ISO / DTR 7637 D2PAK RBO40-40G DESCRIPTION Designed to protect against battery reversal and load dump overvoltagesin automotiveapplications, this monolithic component offers multiple functions in the same package : D1 : reversed battery protection T1 : clamping against negative overvoltages T2 : Transil function against ”load dump” effect. PowerSO-10TM RBO40-40M TO220AB RBO40-40T FUNCTIONAL DIAGRAM 1 3 2 January 1997 - Ed : 3 1/15 RBO40-40G / RBO40-40M / RBO40-40T ABSOLUTE MAXIMUM RATINGS Symbol IFSM IF VPP PPP T stg Tj TL Parameter Non repetitive surge peak forward current (Diode D1) DC forward current (Diode D1) Peak load dump voltage (see note 1and 2) 5 pulses (1 minute between each pulse) Peak pulse power between Input and Output (Transil T1) Tj initial = 25°C Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s at 4.5mm from case for TO220AB 10/1000 µs tp = 10 ms Tc = 75°C Value 120 40 80 1500 - 40 to + 150 150 260 Unit A A V W °C °C Note 1 : for a surge greater than the maximum value, the device will fail in short-circuit. Note 2 : see Load Dump curves. TM : PowerSO-10, TRANSIL and ASD are trademarks of SGS-THOMSON Microelectronics. THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter RBO40-40M RBO40-40G RBO40-40T RBO40-40T Value 1.0 1.0 1.0 60 Unit °C/W Rth (j-a) Junction to ambient °C/W D1 1 3 I32 I13 IF Ipp32 T1 2 T2 IR 32 IR M 32 VC L 31 VB R31 VR M 31 VF 13 IR M 31 IR 31 V13 VR M 32 VB R 32 VC L 32 V32 1 3 Ipp31 2 Ex : VF 13 . between Pin 1 and Pin 3 VBR 32 . between Pin 3 and Pin 2 2/15 ® RBO40-40G / RBO40-40M / RBO40-40T Symbol VRM31/VRM32 VBR31/VBR32 IR31 /IR32 VCL31 /VCL32 VF13 IPP αT C31 /C32 C13 Parameter Stand-off voltage Transil T1 / Transil T2. Breakdown voltage Transil T1 / Transil T2. Leakage current Transil T1 / Transil T2. Clamping voltage Transil T1 / Transil T2. Forward voltage drop Diode D1. Peak pulse current. Temperature coefficient of VBR. Capacitance Transil T1 / Transil T2. Capacitance of Diode D1 ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40°C < Tamb < + 85°C) Symbol VF 13 VF 13 VF 13 VF 13 C13 IF = 40 A IF = 20A IF = 1 A IF = 100 mA F = 1MHz VR= 0 V 3000 Test Conditions Value Min. Typ. Max. 1.9 1.45 1 0.95 Unit V V V V pF ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C < Tamb < + 85°C) Symbol VBR 31 VBR 31 IRM 31 IRM 31 VCL 31 αT C 31 IR = 1 mA IR = 1 mA, Tamb = 25°C VRM = 20 V VRM = 20 V, Tamb = 25°C IPP =37.5A,Tj initial = 25°C Temperature coefficient of VBR F = 1MHz VR = 0 V 10/1000µs 3000 Test Conditions Value Min. 22 24 Typ. Max. 35 32 100 10 40 9 Unit V V µA µA V 10-4/°C pF ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C < Tamb < + 85°C) Symbol VBR 32 VBR 32 IRM 32 IRM 32 VCL 32 αT C32 Test Conditions IR = 1 mA IR = 1 mA, Tamb = 25°C VRM = 20 V VRM = 20 V, Tamb = 25°C IPP = 20 A (note 1) Temperature coefficient of VBR F = 1MHz VR = 0 V 8000 Value Min. 22 24 Typ. Max. 35 32 100 10 40 9 Unit V V µA µA V -4 10 /°C pF Note 1 : One pulse, see pulse definition in load dump test generator circuit. 3/15 ® RBO40-40G / RBO40-40M / RBO40-40T PRODUCT DESCRIPTION The RBO has 3 functionsintegrated on the same chip. D1 : “Diode function” in order to protect against reversed battery operation. T2 : “Transil function” in order to protect against positive surge generated by electric systems (ignition, relay. ...). T1 : Protectionfor motor drive application (See below). 1 3 2 BASIC APPLICATION * The monolithic multi-function protection (RBO) has been developed to protect sensitive semicond uctors in car electronic modules against both overvoltage and battery reverse. * In addition, the RBO circuit prevents overvoltages generated by the module from affecting the car supply network. MOTOR DRIVER APPLICATION BATTERY D1 T2 T1 MOTOR Filter RBO DEVICE MOTOR CONTROL In this application, one half of the motor drive circuit is supplied through the “RBO” and is thus protected as per its basic function application. The second part is connected directly to the “car supply network” and is protected as follows : - For positive surges : T2 (clamping phase) and D1 in forward-biased. - For negative surges : T1 (clamping phase) and T2 in forward-biased. 4/15 ® RBO40-40G / RBO40-40M / RBO40-40T PINOUT configuration in D2PAK : - Input (1) : Pin 1 - Output (3) : Pin 3 - Gnd (2) : Connected to base Tab Marking : Logo, date code, RBO40-40G D1 T2 T1 TAB PINOUT configuration in PowerSO-10 : - Input (1) : Pin 1 to 5 - Output (3) : Pin 6 to 10 - Gnd (2) : Connected to base Tab Marking : Logo, date code, RBO40-40M Pin 1 Input (1) D1 Output (3) T2 T1 Gnd (2) Tab Pin 6 TOP VIEW PINOUT configuration in TO220AB : - Input (1) : Pin 1 - Output (3) : Pin 3 - GND (2) : Connected to base Tab Marking : Logo, date code, RBO40-40T D1 T2 T1 (TAB) 5/15 ® RBO40-40G / RBO40-40M / RBO40-40T LOAD DUMP TEST GENERATOR CIRCUIT (SCHAFFNER NSG 506 C). Issued from ISO / DTR 7637. Open circuit (voltage curve) (pulse test n°5) Corresponding current wave with D.U.T. U(V) 90% Vs 10% Vbat 0 t tr offset 10% / 13.5V I Ipp Ipp/2 t 0 tp = 40ms t Impulse Vs (V) Vbat (V) Ri (Ω) t (ms) tr (ms) Number 60s between each pulse (*) Generator setting N°5 66.5 13.5 2 200 (*)
RBO40-40M 价格&库存

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