RF2L36075CF2

RF2L36075CF2 Datasheet 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor Features 1 3 2 B2 Pin connection Pin Connection 1 Gate 2 Source (bottom side) 3 Drain • • • • • • Order code Frequency VDD POUT Gain Efficiency RF2L36075CF2 3500 MHz 28 V 75 W 12.5 dB 45% High efficiency and linear gain operations Integrated ESD protection Internal input matching for ease of use Large positive and negative gate-source voltage range for improved class C operation Excellent thermal stability, low HCI drift In compliance with the european directive 2002/95/EC Applications • • Telecom S-Band radar Description The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz. It can be used in class AB, B or C for all typical cellular base station modulation formats. Product status link RF2L36075CF2 Product summary Order code RF2L36075CF2 Marking 2L36075 Package B2 Packing Tape and reel 13" Base / Bulk qty 120/120 DS13249 - Rev 2 - April 2021 For further information contact your local STMicroelectronics sales office. www.st.com RF2L36075CF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings (TC = 25 °C) Symbol Parameter Value Unit V(BR)DSS Drain-source voltage 60 V VGS Gate-source voltage -6 to 10 V VDD Maximum operating voltage 32 V TSTG Storage temperature range -65 to 150 °C 200 °C Value Unit 0.35 °C/W TJ Maximum junction temperature Table 2. Thermal data Symbol RthJC(1) Parameter Thermal resistance, junction-to-case 1. TC = 85 °C , TJ = 200 °C, DC test. Table 3. ESD protection Symbol DS13249 - Rev 2 Parameter Class HBM Human body model (according to ANSI/ESDA/JEDEC JS001-2017) 1B CDM Charge device model (according to ANSI/ESDA/JEDEC JS-002-2014) C3 page 2/13 RF2L36075CF2 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 4. Static Symbol V(BR)DSS Parameter Drain-source breakdown voltage IDSS Zero-gate voltage drain current IGSS Gate-body leakage current VGS(th) Gate threshold voltage VGS(Q) Gata quiescent voltage VDS(on) Static drain-source on-voltage IDS(on) Static drain-source on-current RDS(on) Static drain-source on-resistance Test conditions VGS = 0 V, IDS = 100 µA Min. Typ. 60 VGS = 0 V, VDS = 50 V VGS = -6/10 V, VDS = 0 V VDS = 28 V, IDS = 600 μA 1.75 VDS = 1 V, IDS = 600 mA Unit V VGS = 0 V, VDS = 28 V VDS = 1 V, IDS = 600 μA Max. 1 μA ±100 nA 2.50 V 3 V VGS = 10 V, IDS = 800 mA 30 170 VGS = 10 V, IDS = 3.5 A 150 750 VGS = 10 V, VDS = 100 mV VGS = 10 V, IDS = 800 mA VGS = 10 V, IDS = 3.5 A mV 2.5 A 1 Ω Max. Unit 3500 MHz Table 5. Dynamic Symbol f Note: DS13249 - Rev 2 Parameter Test conditions Frequency POUT Output power GPS Power gain ηD Drain efficiency VSWR Load mismatch Min. Typ. 3100 f = 3500 MHz, 1 dB compression point at 10 W WCDMA Output Power 75 W 12.5 dB 45 % 10:1 VDD = 28 V, IDQ = 600 mA, pulsed CW, PW = 10 μs, duty cycle = 10%. page 3/13 RF2L36075CF2 Typical performance 3 Typical performance 3.1 Pulsed CW performance Table 6. Typical performance vs frequency f (MHz) GPS@P1dB(dB) P1dB (dBm) ηD @P1dB (%) P3dB (dBm) ηD @P3dB (%) 3400 12.3 48.3 46.3 50 49 3500 12.5 48.8 44.7 49.6 47 3600 12.5 48.2 42.8 49.3 48 Figure 1. Power gain and drain efficiency vs output power over 3400-3600 MHz band (VDD = 28 V) GADG090420211303GT 50 14 45 40 35 12 30 11 Drain efficiency, ηD (%) Power gain, GPS (dB) 13 25 10 43 44 45 46 47 48 49 50 51 20 POUT (dbm) GPS ηD Note: DS13249 - Rev 2 3400 MHz 3500 MHz 3600 MHz IDQ = 600 mA, pulse width = 10 µs, duty cycle = 10%. page 4/13 RF2L36075CF2 Pulsed CW performance 15 GADG090420211325GT 50 14 45 13 40 12 35 11 30 10 25 9 42 43 44 45 46 47 48 49 50 51 52 Drain efficiency, ηD (%) Power gain, GPS (dB) Figure 2. Power gain and drain efficiency vs output power over 3400-3600 MHz band (VDD = 32 V) 20 POUT (dbm) GPS ηD Note: DS13249 - Rev 2 3400 MHz 3500 MHz 3600 MHz IDQ = 600 mA, pulse width = 10 μs, duty cycle = 10%. page 5/13 RF2L36075CF2 WCDMA performance 3.2 WCDMA performance Table 7. Typical Single-Carrier W-CDMA performance ACPR5M (dBc) POUT, avg(dBm) 3400 MHz 3500 MHz 3600 MHz 33 -50.4 -50.2 -52.0 34 -48.4 -48.1 -50.2 35 -46.3 -46.4 -48.2 36 -44.6 -44.8 -46.0 37 -42.5 -42.7 -44.0 38 -40.5 -41.2 -41.6 39 -38.3 -39.0 -39.5 40 -36.0 -36.8 -36.8 Figure 3. ACPR5M vs output power over 3400-3600 MHz band GADG090420211349GT -35 -37 ACPR5M (dBc) -39 -41 -43 -45 -47 -49 -51 35 36 37 38 39 40 POUT (dbm) 3400 MHz Note: DS13249 - Rev 2 3500 MHz 3600 MHz VDD = 28 V, IDQ = 600 mA, WCDMA signal: 3GPP test model 1; 1 to 64 DPCH; channel bandwidth = 3.84 MHz, PAR = 10.5 dB at 0.01% probability on CCDF. page 6/13 RF2L36075CF2 Test circuits 4 Test circuits Figure 4. Test circuit layout (over 3400 – 3600 MHz band) 2L36075 Figure 5. Test circuit photo (over 3400 - 3600 MHz band) 2L36075 Table 8. Components list Component Value Size Reference C1, C2, C3, C4 6.8 pF 0805 ATC600F C5, C6 10 μF 1210 ceramic multilayer capacitor R1 10 Ω 0603 chip resistor PCB DS13249 - Rev 2 0.508 mm (0.020'') thick, ɛr = 3.48, Rogers RO4350B, 1 oz. copper page 7/13 RF2L36075CF2 Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 5.1 B2 package information Figure 6. B2 package outline 00418521_2 DS13249 - Rev 2 page 8/13 RF2L36075CF2 B2 package information Table 9. B2 mechanical data Symbol DS13249 - Rev 2 Millimetres Min Typ Max A 12.57 12.7 12.83 B 9.65 9.78 9.91 C 20.44 20.57 20.70 D 19.31 19.44 19.57 E 9.27 9.40 9.53 F 3.23 3.61 3.99 G 1.44 1.57 1.70 H 19.68 19.81 19.94 I 4.70 4.83 4.96 L 0.07 0.10 0.15 M 0.89 1.02 1.15 CH1 2.72 R 0.51 page 9/13 RF2L36075CF2 Marking information 5.2 Marking information Figure 7. Marking composition PACKAGE FACE : TOP LEGEND Unmarkable Surface Marking Composition Field A - STANDARD ST LOGO B - ECO level (e4) A C - MARKING AREA D - ADDITIONAL INFORMATION B (MAX CHAR ALLOWED = 7) E - COUNTRY OF ORIGIN C (MAX CHAR ALLOWED = 3) F - Assy Plant D E F G H (PP) G - Assy Year (Y) H - Assy Week (WW) GADG040220211644GT DS13249 - Rev 2 page 10/13 RF2L36075CF2 Revision history Table 10. Document revision history Date Version 09-Jun-2020 1 Changes Initial release Updated Features and Device summary in cover page. Updated Section 1 Electrical ratings. Updated Section 2 Electrical characteristics. Updated Figure 1. Power gain and drain efficiency vs output power over 3400-3600 MHz band (VDD = 28 V). 14-Apr-2021 2 Added Figure 2. Power gain and drain efficiency vs output power over 3400-3600 MHz band (VDD = 32 V). Updated Figure 3. ACPR5M vs output power over 3400-3600 MHz band. Updated Section 4 Test circuits. Added Section 5.2 Marking information. Minor text changes. DS13249 - Rev 2 page 11/13 RF2L36075CF2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3.1 Pulsed CW performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3.2 WCDMA performance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.1 B2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.2 Marking information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 DS13249 - Rev 2 page 12/13 RF2L36075CF2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS13249 - Rev 2 page 13/13