S1210MH

® S12xxxH SCR FEATURES IT(RMS) = 12A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S12xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current IG = 100 mA diG /dt = 1 A/µs. Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Tc= 90°C Tc= 90°C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 12 7.6 132 120 72 100 - 40, + 150 - 40, + 125 260 A2s A/µs °C °C Unit A A A I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM January 1995 Parameter B Repetitive peak off-state voltage Tj = 125°C 200 Voltage D 400 M 600 N 800 Unit V 1/5 S12xxxH THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for DC Parameter Value 60 3 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 06 VD=12V (DC) RL=33Ω Tj= 25°C MIN MAX VGT VGD tgt IH IL VTM IDRM IRRM dV/dt VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ VD=VDRM ITM= 3 x IT(AV) dIG/dt = 0.5A/µs IG = 40mA IT= 250mA Gate open IG=1.2 IGT ITM= 24A tp= 380µs VD = VDRM VR = VRRM VD=67%VDRM Gate open ITM= 3 x IT(AV) VR =35V dI/dt=10A/µs tp=100µs dV/dt=5V/µs VD= 67%VDRM Tj= 25°C Tj= 125°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 110°C Tj= 110°C Tj= 110°C Tj= 110°C MAX MIN TYP MAX MAX MAX MAX MAX MIN TYP MAX 10 100 µs 15 30 0.5 5 Sensitivity 10 10 25 1.5 0.2 2 50 100 1.6 5 1.5 200 100 30 60 17 4 15 V V µs mA mA V µA mA V/µs mA Unit IGM = 4A (tp = 20 µs) tq ORDERING INFORMATION S SCR MESA GLASS CURRENT 2/5 12 17 SENSITIVITY M H PACKAGE : H = TO220 Non-insulated VOLTAGE ® S12xxxH Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) Tcase (o C) Rth = 0 o C/W o 2 C/W 4 o C/W 6 o C/W P (W) 12 360 O 12 DC = 1 80 o o -85 10 8 6 = 90 = 120 o 10 8 6 = 180o -95 -105 4 2 0 0 1 2 3 4 = 30 o = 60 o 4 -115 2 I T(AV)(A) Tamb ( C) o 5 6 7 8 9 10 11 12 0 0 20 40 60 80 100 120 -125 140 Fig.3 : Average on-state current versus case temperature. I T(AV) (A) Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 14 DC 12 Zt h( j-c) 10 8 6 4 2 0 0 Tcase ( C) o = 180 o 0.1 Zt h( j-a) tp (s) 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1E +2 5 E+2 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt 140 Tj initial = 25 C o 120 100 80 60 40 20 Tj(oC) Ih Number of cycles -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 100 0 3/5 ® S12xxxH Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ≤ 10ms, and corresponding value of I2t. I TSM (A). I2 t (A 2 s) Fig.8 : On-state characteristics (maximum values). I TM (A) Tj initial = 25o C 1000 200 100 Tj initial o 25 C I TSM Tj max 100 I2 t 10 Tj max Vto =0.85 V Rt =0.030 tp(ms) VTM (V) 10 1 10 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 4/5 ® S12xxxH PACKAGE MECHANICAL DATA TO220 Non-insulated (Plastic) DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. A G I B C O P N1 N F D M L J H A B C D F G H I J L M N N1 O P Marking : type number Weight : 1.8 g 2.54 1.2 1.4 1.15 2.7 5.3 0.100 0.047 0.055 0.045 4.5 3.53 1.2 6.3 12.7 4.2 3.0 4.7 3.66 1.3 0.9 0.106 0.209 10.3 6.5 9.1 0.500 0.165 0.118 0.177 0.185 0.139 0.144 0.047 0.051 0.035 0.248 0.256 0.358 0.406 REF. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 ®