S2516MH

® S25xxxH SCR FEATURES IT(RMS) = 25A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current IG = 100 mA diG /dt = 1 A/µs. Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Tc= 85°C Tc= 85°C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 25 16 270 250 310 100 - 40, + 150 - 40, + 125 260 A2s A/µs °C °C Unit A A A I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM January 1995 Parameter B Repetitive peak off-state voltage Tj = 125°C 200 Voltage D 400 M 600 N 800 Unit V 1/5 S25xxxH THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for DC Parameter Value 60 1.6 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 14 VD=12V (DC) RL=33Ω Tj= 25°C MIN MAX VGT VGD tgt IH IL VTM IDRM IRRM dV/dt tq VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ Tj= 25°C Tj= 125°C MAX MIN TYP MAX MAX MAX MAX MAX MIN MAX 750 100 115 230 1.6 10 2.5 500 30 75 1.5 0.2 2 100 200 Sensitivity 16 20 50 V V µs mA mA V µA mA V/µs µs mA Unit IGM = 4A (tp = 20 µs) VD=VDRM ITM= 3 x IT(AV) Tj= 25°C dIG/dt = 1.5A/µs IG = 200mA IT= 500mA Gate open IG=1.2 IGT ITM= 50A tp= 380µs VD = VDRM VR = VRRM VD=67%VDRM Gate open ITM= 3 x IT(AV) VR =35V dI/dt=25A/µs tp=100µs dV/dt=25V/µs VD= 67%VDRM Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 110°C Tj= 110°C Tj= 110°C ORDERING INFORMATION S SCR MESA GLASS CURRENT 2/5 25 16 SENSITIVITY M H PACKAGE : H = TO220 Non-insulated VOLTAGE ® S25xxxH Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) Tcase (o C) Rth = 0 o C/W o 1 C/W 2 o C/W 4 o C/W P (W) 25 360 O 25 20 DC = 1 80 = 1 20 o o -70 -80 -90 20 15 10 = 60 o o 15 = 180 o = 90 10 5 -100 -110 5 = 30 o I T(AV)(A) Tamb ( C) o -120 60 80 100 120 140 0 0 2 4 6 8 10 12 14 16 18 20 0 0 20 40 Fig.3 : Average on-state current versus case temperature. I T(AV) (A) Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 30 DC 25 20 15 10 5 Tcase ( C) o Zt h( j-c) 0.1 = 180 o Zt h( j-a) tp (s) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1E +2 5 E+2 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt 300 Tj initial = 25 C o 250 200 150 Ih 100 50 Tj(oC) Number of cycles -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 100 0 3/5 ® S25xxxH Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ≤ 10ms, and corresponding value of I2t. I TSM (A). I2 t (A 2 s) Fig.8 : On-state characteristics (maximum values). I TM (A) 1000 Tj initial = 25oC 1000 I TSM Tj initial o 25 C 100 I2 t Tj max 10 Tj max Vto =0.95 V Rt =0.01 2 tp(ms) VTM (V) 100 1 10 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4/5 ® S25xxxH PACKAGE MECHANICAL DATA TO220 Non-insulated (Plastic) DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. A G I B C O P N1 N F D M L J H A B C D F G H I J L M N N1 O P Marking : type number Weight : 1.8 g 2.54 1.2 1.4 1.15 2.7 5.3 0.100 0.047 0.055 0.045 4.5 3.53 1.2 6.3 12.7 4.2 3.0 4.7 3.66 1.3 0.9 0.106 0.209 10.3 6.5 9.1 0.500 0.165 0.118 0.177 0.185 0.139 0.144 0.047 0.051 0.035 0.248 0.256 0.358 0.406 REF. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 ®