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SA16B3

SA16B3

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    SA16B3 - SCHOTTKY ARRAYS - STMicroelectronics

  • 数据手册
  • 价格&库存
SA16B3 数据手册
® SA12B5 SA16B3 / SA16B6 SCHOTTKY ARRAYS Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Any electronic equipment where suitable bus termination is required to avoid signal reflections and distortions : PCs Workstations High frequency processor boards Dataline interface DESCRIPTION Dedicated to bus termination, the Schottky arrays SA12B5, SA16B3 and SA16B6 minimise stray emissions from PCB tracks. They provide suitable termination by avoiding signal reflexions and distortions. FEATURES 12-BIT (SA12) OR 16-BIT (SA16) DUAL SCHOTTKY DIODE ARRAYS REVERSE VOLTAGE : VRRM = 7.5 V FORWARD VOLTAGE VF < 1.3 V SO-16 BENEFITS Provides impedance matching, and minimizes distortion. Lowers EMI / RFI radiation. Eliminates negative voltage : minimizes risk of latch-up for sensitive ICs. Saves valuable space on board. SO-20 COMPLIES WITH FOLLOWING STANDARD : - MIL STD 883C - Method 3015-6 - class 3 - IEC1000-4-2 level 4 SSOP20 April 1999 - Ed: 1 1/5 SA12B5 / SA16B3 / SA16B6 FUNCTIONAL DIAGRAM (SO-16) VCC 1 16 FUNCTIONAL DIAGRAM (SO-20 and SSOP20) VCC VCC 1 20 VCC 2 2 15 19 3 3 14 18 4 4 17 13 5 16 5 12 6 15 7 6 11 14 8 7 10 13 9 12 VSS 8 9 VSS VSS 10 11 VSS ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C) Symbol P VOP VPP Top Tstg TL Tj Parameter and test conditions Power dissipation Maximum operating voltage (VCC - VSS) Maximum electrostatic discharge MIL STD 883C - Method 3015-6 / IEC1000-4-2 contact Operating temperature range (see note 1) Storage temperature range Maximum lead temperature for soldering during 10s Maximum junction temperature SO-20 SO-16 and SSOP20 Value 1250 850 7.5 8 -40 to +85 -55 to +150 260 150 Unit mW V kV °C °C °C °C Note1: withinthe Top range, the SAxx keepon operating. The impacts of the ambient temperature are givenby derating curves on thefollowingpage. ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol IR VF Cd Parameter and test conditions Leakage current @ VRRM = 7.5 V Forward voltage (see note 2) Capacitance IPP = 18 mA IPP = 50 mA Vbias = 0V, F = 1MHz Typ. Max. 5 1.05 1.3 16 Unit µA V pF Note 2: for both pull-up and pull-down schotty diodes. THERMAL RESISTANCE Symbol Rth(j-a) Parameter Junction to ambient Packages SO-16 and SSOP20 SO-20 Value 140 100 Unit °C/W 2/5 SA12B5 / SA16B3 / SA16B6 Fig1-1: Clamping forward voltage versus peak pulse current (typical values, low level). Fig1-2: Clamping forward voltage versus peak pulse current (typical values, high level). Ipp(A) 1E+0 1E-1 tp=2.5 µs Tj=25° C Ipp(A) 5.0 Tj=25°C tp=2.5µs 1.0 1E-2 1E-3 Tj=85° C Tj=-40° C Vcl(V) 1E-4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Vcl(V) 0.1 0 1 2 3 4 5 6 7 Fig 2: Leakage current versus junction temperature (typical values). Fig 3: Non repetitive surge peak forward current versus pulse duration (rectangular waveform). IR(µA) 1E+2 VR=7.5V IFSM(A) 10 Tj initial =25°C 1E+1 1E+0 1E-1 Tj(°C) 1E-2 0 25 50 75 100 125 5 2 tp( µs) 1 1 10 100 1000 Fig 4: Non repetitive surge peak forward current versus initial junction temperature. Fig 5: Capacitance between input or output and ground versus applied voltage (typical values). IFSM[Tj] / IFSM[Tj=25 °C] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 Tj(°C) 75 100 125 Ci/o(pF) 30 28 26 24 22 20 18 16 Vi/o-gnd(V) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Vcc=5V F=1MHz Vosc=30mV 3/5 SA12B5 / SA16B3 / SA16B6 TYPICAL APPLICATION VCC SAxxBx µP Bus High speed memory MARKING Type SA12B5 SA16B3 SA16B6 Package SO16 SO20 SSOP20 Marking SA12B5 SA16B3 SA16B6 PACKAGE MECHANICAL DATA SO-16 DIMENSIONS L G C a2 A b e e3 D (1) M S a1 E b1 c1 REF. Millimeters Min. Typ. Max. Min. 1.75 0.1 0.35 0.19 0.5 45°(typ.) 9.8 5.8 1.27 8.89 3.8 4.6 0.5 4.0 5.3 0.75 8°(typ.) 0.150 0.181 10 6.2 0.386 0.228 0.20 0.004 1.6 0.46 0.014 0.25 0.007 Inches Typ. Max. 0.069 0.008 0.063 0.018 0.010 0.020 0.394 0.244 0.050 0.350 0.158 0.209 0.050 0.030 A a1 a2 b b1 C c1 D E 16 9 F (1) 1 8 (1) Do not include mold flash or protr usions.Mold flash or protr usions shall not exceed 0.15mm (0.006inches) Weight : 0.160g e e3 F G L M S 1.27 0.020 4/5 SA12B5 / SA16B3 / SA16B6 PACKAGE MECHANICAL DATA SO-20 DIMENSIONS REF. A A1 B C D E e H h L K Millimeters Inches Min. Typ. Max. Min. Typ. Max. 2.35 0.10 0.33 0.23 12.6 7.40 1.27 10.0 0.25 0.50 10.65 0.394 0.75 0.010 1.27 0.020 8° (max) 2.65 0.20 0.51 0.32 13.0 7.60 0.092 0.004 0.013 0.009 0.484 0.291 0.050 0.419 0.029 0.050 0.104 0.008 0.020 0.013 0.512 0.299 Weight : 0.520g SSOP20 DIMENSIONS Millimeters Inches Min. a2 A b D e S E a1 b1 L REF. A A1 A2 b c D E E1 e k L Typ. Max. Min. 2.00 0.25 2.00 0.35 0.35 8.05 8.70 6.22 Typ. Max. 20 11 F 1 10 1.51 0.25 0.10 7.05 7.60 5.02 0° 0.25 0.30 6.10 0.65 0.50 0.079 0.010 0.059 0.079 0.010 0.012 0.014 0.004 0.014 0.278 0.317 0.299 0.343 0.198 0.240 0.245 0.026 10° 0° 10° 0.80 0.010 0.020 0.031 Weight : 0.180g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationprevious ly supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 5/5
SA16B3 价格&库存

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TS-1095S-A16B3-C2D1
  •  国内价格
  • 1+0.17639
  • 10+0.1624
  • 30+0.1596
  • 100+0.1512

库存:870