SCT1000N170

SCT1000N170 Silicon carbide Power MOSFET 1700 V, 6 A, 1.4 Ω (typ., TJ = 150 °C) in an HiP247™ package Datasheet - preliminary data Features x x x x Very tight variation of on-resistance vs. temperature Slight variation of switching losses vs. temperature Very high operating junction temperature capability (TJ = 200 °C) Very fast and robust intrinsic body diode Applications x x Figure 1: Internal schematic diagram Auxiliary power supply for server Switch mode power supply Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for highefficiency and high power density applications. D(2) G(1) S(3) AM01475v1_noZen_no Tab Table 1: Device summary Order code Marking Package Packing SCT1000N170 SCT1000N170 HiP247™ Tube The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”. See Section 3: "Package information". February 2017 DocID028161 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/12 www.st.com Contents SCT1000N170 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 3 Package information ....................................................................... 9 3.1 4 2/12 Electrical characteristics (curves) ...................................................... 6 HiP247™ package mechanical data ................................................. 9 Revision history ............................................................................ 11 DocID028161 Rev 2 SCT1000N170 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1700 V VGS Gate-source voltage -10 to 25 V ID Drain current (continuous) at TC = 25 °C 6 Drain current (continuous) at TC = 100 °C 5 A IDM(1) Drain current (pulsed) 12 A PTOT Total dissipation at TC = 25 °C 120 W Tstg Storage temperature range Tj Operating junction temperature range -55 to 200 °C °C Notes: (1)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max DocID028161 Rev 2 Value Unit 1.46 °C/W 50 °C/W 3/12 Electrical characteristics 2 SCT1000N170 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4: On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 10 Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V Gate threshold voltage VDS = VGS, ID = 1 mA Static drain-source on-resistance μA ±100 2.1 Unit V VDS = 1700 V, VGS = 0 V, TJ = 200 °C IGSS Max. 1700 1 IDSS RDS(on) Typ. VDS = 1700 V, VGS = 0 V Zero gate voltage drain current VGS(th) Min. 3.5 VGS = 20 V, ID = 3 A 1 VGS = 20 V, ID = 3 A, TJ = 150 °C 1.4 VGS = 20 V, ID = 3 A, TJ = 200 °C 1.6 nA V 1.5 Ω Table 5: Dynamic Symbol 4/12 Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance VDS = 1000 V, f = 1 MHz, VGS = 0 V VDD = 1000 V, ID = 2 A, VGS = 0 to 20 V f = 1 MHz, ID = 0 A DocID028161 Rev 2 Min. Typ. Max. Unit - 150 - pF - 12 - pF - 5 - pF - 14 - nC - 2 - nC - 8 - nC - 9.6 - Ω SCT1000N170 Electrical characteristics Table 6: Switching energy (inductive load) Symbol Parameter Test conditions Eon Turn-on switching energy Eoff Turn-off switching energy Eon Turn-on switching energy Eoff Turn-off switching energy Min. Typ. Max. Unit VDD = 1000 V, ID = 2 A, RG= 6.8 Ω, VGS = -5 to 20 V - 46 - μJ - 11 - μJ VDD = 1000 V, ID = 2 A, RG= 6.8 Ω, VGS = -5 to 20 V, TJ = 150 °C - 57 - μJ - 13 - μJ Unit Table 7: Reverse diode characteristics Symbol Parameter Test conditions VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current IF = 3 A, VGS = 0 V ISD = 2 A, di/dt = 1000 A/μs, VDD = 1000 V DocID028161 Rev 2 Min Typ. Max - 4.2 - V - 22 - ns - 76 - nC - 5.8 - A 5/12 Electrical characteristics 2.1 6/12 SCT1000N170 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics (TJ= 25 °C) Figure 5: Output characteristics (TJ= 200 °C) Figure 6: Transfer characteristics Figure 7: Power dissipation DocID028161 Rev 2 SCT1000N170 Electrical characteristics Figure 8: Gate charge vs gate-source voltage Figure 9: Capacitance variations Figure 10: Switching energy vs. drain current Figure 11: Switching energy vs. junction temperature Figure 12: Normalized V(BR)DSS vs. temperature Figure 13: Normalized gate threshold voltage vs. temperature DocID028161 Rev 2 7/12 Electrical characteristics SCT1000N170 Figure 14: Normalized on-resistance vs. temperature Figure 15: Reverse conduction characteristics (TJ= 25 °C) Figure 16: Reverse conduction characteristics (TJ= 200 °C) 8/12 DocID028161 Rev 2 SCT1000N170 3 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 3.1 HiP247™ package mechanical data Figure 17: HiP247™ package outline DocID028161 Rev 2 9/12 Package information SCT1000N170 Table 8: HiP247™ package mechanical data mm. Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 e 5.30 L 14.20 L1 3.70 L2 10/12 Typ. 15.75 5.45 5.60 14.80 4.30 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID028161 Rev 2 3.65 5.50 5.50 5.70 SCT1000N170 4 Revision history Revision history Table 9: Document revision history Date Revision 29-Jul-2015 1 First release 2 Updated title and features on cover page. Updated Section 1: "Electrical ratings" and Section 2: "Electrical characteristics". Minor text changes 10-Feb-2017 Changes DocID028161 Rev 2 11/12 SCT1000N170 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 12/12 DocID028161 Rev 2