SCT10N120

SCT10N120 Datasheet Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package Features • • Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 °C) • • Very fast and robust intrinsic body diode Low capacitance 3 2 1 HiP247™ Applications • • • • D(2, TAB) Solar inverters, UPS Motor drives High voltage DC-DC converters Switch mode power supplies Description G(1) S(3) AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT10N120 Product summary Order code SCT10N120 Marking SCT10N120 Package HiP247™ Packing Tube The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”. DS10954 - Rev 3 - March 2018 For further information contact your local STMicroelectronics sales office. www.st.com SCT10N120 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10 to 25 V Drain current (continuous) at TC = 25 °C 12 A Drain current (continuous) at TC = 100 °C 10 A Drain current (pulsed) 24 A PTOT Total dissipation at TC = 25 °C 150 W Tstg Storage temperature range ID ID IDM (1) Tj Operating junction temperature range -55 to 200 °C °C 1. Pulse width limited by safe operating area. Table 2. Thermal data DS10954 - Rev 3 Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Value Unit 1.17 °C/W 40 °C/W page 2/13 SCT10N120 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 3. On/off states Symbol V(BR)DSS IDSS IGSS VGS(th) Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. 10 µA (1) 100 µA VDS = 0 V, VGS = -10 to 22 V 100 nA VDS = 1200 V, VGS = 0 V, TJ = 200 °C drain current Gate-body leakage current Gate threshold voltage VDS = VGS, ID = 250 µA 1.8 TJ = 150 °C on-resistance 3.5 500 VGS = 20 V, ID = 6 A, Static drain-source Unit V VDS = 1200 V, VGS = 0 V Zero gate voltage Max. 1200 VGS = 20 V, ID = 6 A RDS(on) Typ. VGS = 20 V, ID = 6 A, TJ = 200 °C V 690 mΩ 520 mΩ 580 mΩ 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance Test conditions VDS = 400 V, f = 1 MHz, VGS = 0 V VDD = 800 V, ID = 6 A, VGS = 0 to 20 V f = 1 MHz, ID = 0 A Min. Typ. Max. Unit - 290 - pF - 30 - pF - 9 - pF - 22 - nC - 3 - nC - 10 - nC - 8 - Ω Min. Typ. Max. Unit Table 5. Switching energy (inductive load) Symbol Test conditions Eon Turn-on switching energy VDD = 800 V, ID = 6 A - 90 - µJ Eoff Turn-off switching energy RG = 10 Ω, VGS = -5 to 20 V - 30 - µJ Eon Turn-on switching energy VDD = 800 V, ID = 6 A - 104 - µJ - 33 - µJ Eoff DS10954 - Rev 3 Parameter Turn-off switching energy RG = 10 Ω, VGS = -5 to 20 V TJ = 150 °C page 3/13 SCT10N120 Electrical characteristics Table 6. Switching times Symbol td(on) tf td(off) tr Parameter Test conditions Turn-on delay time Min. Typ. Max. Unit - 7 - ns Fall time VDD = 800 V, ID = 6 A, - 17 - ns Turn-off delay time RG = 10 Ω, VGS = -5 to 20 V - 14 - ns - 12 - ns Min Typ. Max Unit - 4.3 - V - 16 - ns - 107 - nC - 12 - A Rise time Table 7. Reverse SiC diode characteristics Symbol DS10954 - Rev 3 Parameter VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions IF = 6 A, VGS = 0 V ISD = 6 A, di/dt = 2000 A/µs VDD = 800 V, TJ= 150 °C page 4/13 SCT10N120 Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Safe operating area Figure 2. Thermal impedance GIPG230520161114SOA ID (A) Operation in this area is limited by R DS(on) K GIPG230520161115ZTH 0.8 10 1 0.6 t p =100 µs 0.4 10 0 T j ≤ 200 °C T c = 25°C single pulse 10 -1 10 -1 t p =1 ms t p =10 ms 10 10 0 1 10 10 2 V DS (V) 3 Figure 3. Output characteristics (TJ= 25 °C) ID (A) 10 GIPG230520161115OCH_25 V GS = 20 V V GS =16 V 0 10 -6 V GS =14 V 10 -2 ID (A) V GS =12 V V GS =10 V V GS =6 V 2 4 6 8 10 12 V DS (V) GIPG230520161116OCH_200 V GS =14,16, 20 V V GS =16, 20 V V GS =14 V V GS =12 V V GS =10 V 0 0 2 4 V GS =12 V ID (A) V GS =10 V 4 8 V DS = 12 V 8 T J = 150 °C 4 T J = 25 °C 2 2 2 4 6 8 V GS =6 V 10 12 V DS (V) V GS =6 V 10 12 V DS (V) GIPG230520161117TCH 6 6 6 Figure 6. Transfer characteristics 10 8 t p (s) 2 Figure 5. Output characteristics (TJ= 200 °C) ID (A) 10 -1 GIPG230520161116OCH_150 4 2 DS10954 - Rev 3 10 -3 6 4 0 0 10 -4 8 6 10 10 -5 Figure 4. Output characteristics (TJ= 150 °C) 10 8 0 0 0.2 0 0 4 8 12 16 V GS (V) page 5/13 SCT10N120 Electrical characteristics curves Figure 7. Power dissipation P TOT (W) Figure 8. Gate charge vs gate-source voltage V GS (V) GIPG230520161119PD 150 20 120 16 90 12 60 8 30 4 0 -25 25 75 125 175 T C (°C) Figure 9. Capacitance variations C (pF) 0 0 GIPG230520161121QVG V DD = 800 V ID=6A 4 8 12 16 20 Q g (nC) Figure 10. Switching energy vs. drain current E (µJ) GIPG230520161122CVR C ISS GIPG230520161127SWEC V DD = 800 V R G = 10 Ω V GS = -5 to 20 V 320 E tot 10 2 E on 240 C OSS 160 10 1 C RSS f = 1 MHz E off 80 10 0 10 -1 10 0 10 1 10 2 V DS (V) Figure 11. Switching energy vs. junction temperature E (µJ) GIPG230520161131SWET E tot 0 0 4 E on 80 40 0 0 DS10954 - Rev 3 50 V (BR)DSS (norm.) 1.00 E off 0.96 150 I D (A) GIPG230520161133BDV I D = 1 mA 1.02 V DD = 800 V ID=6A R G = 10 Ω V GS = -5 to 20 V 100 12 Figure 12. Normalized V(BR)DSS vs. temperature 1.04 120 8 0.98 T J (°C) 0.94 -75 -25 25 75 125 175 T j (°C) page 6/13 SCT10N120 Electrical characteristics curves Figure 13. Normalized gate threshold voltage vs. temperature V GS(th) (norm.) GIPG230520161149VTH Figure 14. Normalized on-resistance vs. temperature R DS(on) (norm.) GIPG230520161134RON 1.2 1.4 I D = 250 µA V GS = 20 V 1.1 1.2 1.0 1.0 0.9 0.8 0.8 0.6 0.4 -75 0.7 25 -25 25 75 125 175 Figure 15. Body diode characteristics (TJ= -50 °C) -8 -6 -4 -2 75 125 V DS (V) I D (A) V GS = -5 V V GS = -2 V -8 -6 -4 -2 -2 -4 -6 -6 -8 V GS = -2 V V DS (V) I D (A) -10 V GS = 0 V -12 Figure 17. Body diode characteristics (TJ= 150 °C) -4 V DS (V) I D (A) V GS = -5 V -10 GIPG230520161143BDC_-50 -2 -4 -8 V GS = 0 V -6 T j (°C) Figure 16. Body diode characteristics (TJ= 25 °C) -2 -8 175 T j (°C) GIPG230520161146BCD_25 Figure 18. 3rd quadrant characteristics (TJ= -50 °C) -4 -3 -2 -1 V DS (V) I D(A) -2 V GS = -5 V -4 -12 -2 VGS = 15 V -4 VGS =10 V -6 -6 V GS = -2 V -8 -10 V GS = 0 V GIPG230520161151BDC_150 DS10954 - Rev 3 -12 -8 V GS =0 V -10 VGS =5 V GIPG230520161155QC_-50 -12 page 7/13 SCT10N120 Electrical characteristics curves Figure 19. 3rd quadrant characteristics (TJ= 25 °C) -4 -3 -2 -1 VDS (V) ID (A) VGS =10 V VGS =5 V GIPG230520161223QC_25 DS10954 - Rev 3 -3 -2 -1 V DS (V) I D(A) -2 -4 -4 -8 VGS =0 V -4 -2 -6 VGS = 15 V Figure 20. 3rd quadrant characteristics (TJ= 150 °C) -10 -12 VGS = 15 V -6 VGS =10 V -8 V GS =0 V VGS =5 V GIPG230520161225QC_150 -10 -12 page 8/13 SCT10N120 Test circuits 3 Test circuits Figure 21. Switching test waveforms for transition times Figure 22. Clamped inductive switching waveform t Off t On V DS t d (On) t d (Off) tf VDS On tr 90% 90% 10% VGS On V GS VGS Off GIPD101020141511FSR DS10954 - Rev 3 V DS Off 10% 90% 10% GIPD101020141502FSR page 9/13 SCT10N120 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 HiP247 package information Figure 23. HiP247™ package outline 8396756_2 Table 8. HiP247™ package mechanical data Dim. DS10954 - Rev 3 mm Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 page 10/13 SCT10N120 HiP247 package information Dim. mm Min. Max. E 15.45 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 DS10954 - Rev 3 Typ. 15.75 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 page 11/13 SCT10N120 Revision history Table 9. Document revision history Date Revision 23-Feb-2016 1 Changes First release Modified: title, features and Figure 1: "Internal schematic diagram" in cover page Modified: Table 2: "Absolute maximum ratings" and Table 3: "Thermal data" 23-May-2016 2 Modified: Table 4: "On/off states", Table 5: "Dynamic", Table 6: "Switching energy (inductive load)", Table 7: "Switching times" and Table 8: "Reverse SiC diode characteristics" Added: Section 4.1: "Electrical characteristics (curves)" Minor text changes Removed maturity status indication from cover page. The document status is production data. 21-Mar-2018 3 Updated Section 2.1 Electrical characteristics curves. Minor text changes. DS10954 - Rev 3 page 12/13 SCT10N120 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS10954 - Rev 3 page 13/13