SCT10N120AG

SCT10N120AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package Features 1 2 3 HiP247™ • • • AEC-Q101 qualified Very tight variation of on-resistance vs. temperature Very high operating temperature capability (TJ = 200 °C) • • Very fast and robust intrinsic body diode Low capacitance Applications • • • • D(2, TAB) Motor drives EV chargers High voltage DC-DC converters Switch mode power supplies Description G(1) S(3) AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT10N120AG Product summary Order code SCT10N120AG Marking SCT10N120AG Package HiP247™ Packing Tube DS12509 - Rev 2 - March 2019 For further information contact your local STMicroelectronics sales office. www.st.com SCT10N120AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10 to 25 V Drain current (continuous) at TC = 25 °C 12 A Drain current (continuous) at TC = 100 °C 10 A Drain current (pulsed) 24 A PTOT Total power dissipation at TC = 25 °C 150 W Tstg Storage temperature range ID ID IDM (1) Tj Operating junction temperature range -55 to 200 °C °C 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol DS12509 - Rev 2 Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Value Unit 1.17 °C/W 40 °C/W page 2/14 SCT10N120AG Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 3. On/off states Symbol V(BR)DSS IDSS IGSS VGS(th) Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Max. 1200 Unit V VDS = 1200 V, VGS = 0 V 10 µA (1) 100 µA Gate-body leakage current VDS = 0 V, VGS = -10 to 25 V 100 nA Gate threshold voltage VDS = VGS, ID = 250 µA Zero gate voltage drain current VDS = 1200 V, VGS = 0 V, TJ = 200 °C 1.8 VGS = 20 V, ID = 6 A Static drain-source onresistance 3.5 500 VGS = 20 V, ID = 6 A, RDS(on) Typ. TJ = 150 °C VGS = 20 V, ID = 6 A, TJ = 200 °C V 690 mΩ 520 mΩ 580 mΩ 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance VDS = 400 V, f = 1 MHz, VGS = 0 V VDD = 800 V, ID = 6 A, VGS = 0 to 20 V f=1 MHz, ID=0 A Min. Typ. Max. Unit - 290 - pF - 30 - pF - 9 - pF - 22 - nC - 3 - nC - 10 - nC - 8 - Ω Min. Typ. Max. Unit Table 5. Switching energy (inductive load) Symbol DS12509 - Rev 2 Parameter Test conditions Eon Turn-on switching energy VDD = 800 V, ID = 6 A - 90 - µJ Eoff Turn-off switching energy RG= 10 Ω, VGS = -5 to 20 V - 30 - µJ Eon Turn-on switching energy VDD = 800 V, ID = 6 A - 104 - µJ Eoff Turn-off switching energy - 33 - µJ RG= 10 Ω, VGS = -5 to 20 V TJ= 150 °C page 3/14 SCT10N120AG Electrical characteristics Table 6. Switching times Symbol td(on) tf td(off) tr Parameter Test conditions Turn-on delay time Min. Typ. Max. Unit - 7 - ns Fall time VDD = 800 V, ID = 6 A, - 17 - ns Turn-off delay time RG = 10 Ω, VGS = -5 to 20 V - 14 - ns - 12 - ns Min Typ. Max Unit - 4.3 - V - 16 - ns - 107 - nC - 12 - A Rise time Table 7. Reverse SiC diode characteristics Symbol DS12509 - Rev 2 Parameter VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions IF = 6 A, VGS = 0 V ISD = 6 A, di/dt = 2000 A/µs VDD = 800 V, TJ=150 °C page 4/14 SCT10N120AG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance GIPG230520161114SOA ID (A) Operation in this area is limited by R DS(on) K GIPG230520161115ZTH 0.8 10 1 0.6 t p =100 µs 0.4 10 0 T j ≤ 200 °C T c = 25°C single pulse 10 -1 10 -1 t p =1 ms t p =10 ms 10 0 10 1 10 2 V DS (V) 10 3 Figure 3. Output characteristics (TJ= 25 °C) ID (A) 10 GIPG230520161115OCH_25 V GS = 20 V V GS =16 V 10 -5 10 -4 10 -3 10 -2 V GS =14 V ID (A) GIPG230520161116OCH_150 V GS =16, 20 V V GS =14 V V GS =12 V 4 V GS =12 V V GS =10 V V GS =6 V 2 4 6 8 10 12 t p (s) 6 4 2 10 -1 Figure 4. Output characteristics (TJ= 150 °C) 8 6 DS12509 - Rev 2 0 10 -6 10 8 0 0 0.2 V DS (V) V GS =10 V 2 0 0 2 4 6 8 V GS =6 V 10 12 V DS (V) page 5/14 SCT10N120AG Electrical characteristics (curves) Figure 5. Output characteristics (TJ= 200 °C) ID (A) 10 Figure 6. Transfer characteristics ID (A) GIPG230520161116OCH_200 V GS =14,16, 20 V GIPG230520161117TCH V DS = 12 V 10 V GS =12 V 8 8 T J = 150 °C 6 6 V GS =10 V 4 4 T J = 25 °C 2 2 0 0 2 4 6 8 V GS =6 V 10 12 V DS (V) Figure 7. Power dissipation P TOT (W) 0 0 20 120 16 90 12 60 8 30 4 75 125 175 T C (°C) Figure 9. Capacitance variations C (pF) 12 V GS (V) 150 25 8 16 V GS (V) Figure 8. Gate charge vs gate-source voltage GIPG230520161119PD 0 -25 4 0 0 GIPG230520161121QVG V DD = 800 V ID=6A 4 8 12 16 20 Q g (nC) Figure 10. Switching energy vs. drain current E (µJ) GIPG230520161122CVR C ISS 320 GIPG230520161127SWEC V DD = 800 V R G = 10 Ω V GS = -5 to 20 V E tot 10 2 E on 240 C OSS 160 10 1 C RSS f = 1 MHz E off 80 10 0 10 -1 DS12509 - Rev 2 10 0 10 1 10 2 V DS (V) 0 0 4 8 12 I D (A) page 6/14 SCT10N120AG Electrical characteristics (curves) Figure 11. Switching energy vs. junction temperature E (µJ) Figure 12. Normalized V(BR)DSS vs. temperature V (BR)DSS (norm.) GIPG230520161131SWET E tot GIPG230520161133BDV 1.04 120 E on 80 40 0 0 50 1.02 V DD = 800 V ID=6A R G = 10 Ω V GS = -5 to 20 V 1.00 E off 0.96 100 150 0.98 T J (°C) Figure 13. Normalized gate threshold voltage vs. temperature V GS(th) (norm.) I D = 1 mA 0.94 -75 -25 25 125 175 T j (°C) Figure 14. Normalized on-resistance vs. temperature R DS(on) (norm.) GIPG230520161149VTH GIPG230520161134RON 1.2 1.4 75 V GS = 20 V I D = 250 µA 1.1 1.2 1.0 1.0 0.9 0.8 0.8 0.6 0.4 -75 -25 25 75 125 175 T j (°C) Figure 15. Body diode characteristics (TJ= -50 °C) -8 -6 -4 -2 V DS (V) I D (A) -2 V GS = -5 V V GS = -2 V V GS = 0 V DS12509 - Rev 2 75 125 175 T j (°C) Figure 16. Body diode characteristics (TJ= 25 °C -8 -6 -4 -2 V DS (V) I D (A) -2 V GS = -5 V -4 -4 -6 -6 -8 -10 GIPG230520161143BDC_-50 0.7 25 -12 -8 V GS = -2 V V GS = 0 V GIPG230520161146BCD_25 -10 -12 page 7/14 SCT10N120AG Electrical characteristics (curves) Figure 17. Body diode characteristics (TJ= 150 °C) -8 -6 -4 -2 V DS (V) I D (A) Figure 18. 3rd quadrant characteristics (TJ= -50 °C) -4 -3 -2 -1 V DS (V) I D(A) -2 V GS = -5 V -4 -2 VGS = 15 V -4 VGS =10 V -6 -6 V GS = -2 V -8 -10 -12 Figure 19. 3rd quadrant characteristics (TJ= 25 °C) -4 -3 -2 -1 VDS (V) ID (A) VGS =10 V VGS =5 V GIPG230520161223QC_25 DS12509 - Rev 2 -12 Figure 20. 3rd quadrant characteristics (TJ= 150 °C) -4 -3 -2 -1 V DS (V) I D(A) -2 -4 -4 -8 VGS =0 V GIPG230520161155QC_-50 -2 -6 VGS = 15 V -10 VGS =5 V V GS = 0 V GIPG230520161151BDC_150 -8 V GS =0 V -10 -12 VGS = 15 V -6 VGS =10 V -8 V GS =0 V VGS =5 V GIPG230520161225QC_150 -10 -12 page 8/14 SCT10N120AG Test circuits 3 Test circuits Figure 21. Switching test waveforms for transition times Figure 22. Clamped inductive switching waveform t Off t On V DS t d (On) t d (Off) tf VDS On tr 90% 90% 10% VGS On V GS VGS Off GIPD101020141511FSR DS12509 - Rev 2 V DS Off 10% 90% 10% GIPD101020141502FSR page 9/14 SCT10N120AG Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 HiP247 package information Figure 23. HiP247™ package outline 8581091_2 DS12509 - Rev 2 page 10/14 SCT10N120AG HiP247 package information Table 8. HiP247™ package mechanical data Dim. DS12509 - Rev 2 mm Min. Typ. Max. A 4.85 5.00 5.15 A1 2.20 A2 1.90 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.85 20.00 20.15 E 15.45 15.60 15.75 E3 1.45 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 18.30 P 3.55 3.65 Q 5.65 5.95 S 5.30 2.60 2.00 2.10 1.65 5.45 18.50 5.50 5.60 18.70 5.70 page 11/14 SCT10N120AG Revision history Table 9. Document revision history DS12509 - Rev 2 Date Revision Changes 20-Mar-2018 1 First release 01-Mar-2019 2 Updated Table 3. On/off states. Updated package information. page 12/14 SCT10N120AG Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1 HiP247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS12509 - Rev 2 page 13/14 SCT10N120AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS12509 - Rev 2 page 14/14